• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.279-283
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• 1998

The electron swarm parameters in the$CF_4$(O.l%, 5%)+Ar mixtures are measured by time of flight method over the E/N(Td) range from 10 to 300LTdl. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been also used to study electron transport coefficients. We have calculated W, NDL, NDT, $\alpha$ and the limiting breakdown electric field to gas mixtures ratio in pure $CF_4$ gas and$CF_4+Ar$ mixtures. The measured results and the calculated results have been compared each other paper.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 정기총회 및 학술대회 전문대학교육위원
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• pp.85-88
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• 2008

Drift velocities and Distribution Function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight method, The results show that the deduced electron drift velocities agree reasonably well with theoretical for a rang of E/N values The results simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.106-109
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• 2002

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar + $SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =0.01${\sim}$300[Td]. P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF. PT.SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1566-1567
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• 2006

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.451-452
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• 2007

Drift velocities for electrons in $SF_6$-Ar mixtures gas by simulation has been analysed over the EIN range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight (TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients. longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.507-508
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• 2006

$SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• 전기학회논문지P
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• 제51권1호
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• pp.28-32
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• 2002

Energy distribution function for electrons in $SF_6+Ar$ mixtures gas used by MCS-BEq algorithm bas been analysed over the E/N range 30-300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6+Ar$ mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 통합자연과학논문집
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• 제5권3호
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• pp.195-197
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• 2012

Halogen atoms in a molecule are traditionally considered as electron donors, since they have unshared electrons. Normally when they are bonded, there are three lone pair electrons. These lone pairs can function as Lewis bases. However, when they are bound to electron withdrawing groups, they can act as Lewis acids. Since the situation is similar hydrogen bonding (HB), this type of interaction is named as halogen bonding (XB). This mainly comes from the uneven distribution of electron density around the halogen atoms. Since the electron density around halogen atom opposite to ${\sigma}$-bond is depleted, its electropositive region is called ${\sigma}$-hole. This ${\sigma}$-hole can attract halogen bond acceptors, requiring more stringent directionality compared to HB. Since this interaction mainly comes from electrostatic origin, the geometry tends to be linear. Since the XB energy is comparable to corresponding HB. Still in its infancy, XB shows a broad range of applicability, with potentially more useful properties, compared to corresponding HB.

• 대한전자공학회논문지
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• 제5권1호
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• pp.1-5
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• 1968

GaAs의 단결정은 Ga의 용액으로부터 epitaxial 방법으로 성장시키는데 300°K에서는 carrier concentration 10 /㎤에서 electron-mobility 7,500∼9,300㎠/V-sec. 정도의 것이 얻어지며 77°K에서는 electron-mobility 50,000∼95,000㎠/V-sec.의 것이 얻어진다. mobility-온도 관계곡선의 이론적인 것과 실험적인 것을 비교해 보면 77°K에서 430°K의 온도범위내에서 ion화한 불순물과 phonon이 주요한 scattering mechanism이라는 것을 나타낸다. 이것은 epitaxial층이 mobility를 제한하는 다른 결함을 별로 내포하지 않는다는 것을 의미한다. epitaxial층의 photoluminescence spectra는 심부에 존재하는 결함의 준위에 의한 방출을 나타내지 않는다.