• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.77-86
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• 2012

The connection between the continuousness of Rabi oscillation and the discontinuity of quantum jumps has long remained one of the conceptual difficulties since the discovery of the quantum physical paradigm. In this study, however, we demonstrate that the behavior of the atom-field composite system gradually changes from the continuous Rabi interaction to the discontinuous quantum jumps as the atom-field coupling strength is reduced. The reduction occurs through enlarging the quantization volume of the mode so that the mode approaches one of the infinitely many modes of the thermal background.

• Current Optics and Photonics
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• v.2 no.1
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• pp.79-84
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• 2018

We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.340-351
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• 1995

Electrical, physical and optical properties of Aluminum(Al), Copper(Cu) thin films were investigated in order to establish the optimum sputtering parameters in Liquid Crystal Display (LCD) panel applications. DC-magnetron sputtered film on coming 7059 samples were fabricated with variations of deposition power densities, deposition pressures and substrate temperatures. Low resistivity films(AI;2.80 .mu..ohm.-cm, Cu:1.84 .mu..ohm-cm),which lower than the reported values, were obtained under sputtering parameters of power density(250W), substrate temperature(450-530.deg. C) and 5*10$\^$-3/ Torr deposition pressure. Expected columnar growth and stable grain growth of both films was observed through the Scanning Electron Microscope(SEM) micrographs. Dependency of the applicable defect-free film density upon depositon power and temperature was also characterized. Not too noticable variations in X-ray diffraction patterns were remarked under the alterations of sputtering parameters. High optical reflectivities of Al, Cu films, approximately 70-90 %, showed high degree of surface flatness.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.690-693
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• 2003

Soft x-ray microscopy provides a unique set of capabilities in-between those of visible light and electron microscopy. It has long been recognized that nature provides a 'water window' spectral region between the K shell x-ray absorption edges of carbon (~290eV) and oxygen (~540eV), where organic materials show strong absorption and phase contrast, while water is relatively non-absorbing. This enables imaging of hydrated biological specimens that are several microns thick with high intrinsic contrast using x-rays with a wavelength of 2.3~4.4nm. Soft X-ray microscopy is therefore well suited to the study of specimens like single biological cells. The most direct advantage of X-ray microscope is their high spatial resolution when compared with visible light microscopes, combined with an ability to image hydrated specimens that are several microns with a minimum of preparation. Our study describes the conceptual design of soft x-ray microscope system based on a laser-based source for biomedical application with high resolution ($\leq$50nm) and short exposure time ($\leq$30sec).

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.298-303
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• 1994

Microlens arrays are fabricated by melting "islands" of thick photoresist on a glass substrate. Microlenses with diameters $25\mu\textrm{m}$, $50\mu\textrm{m}$, $100\mu\textrm{m}$are made. Their surface profiles are obtained by a scanning electron microscope and a mechanical surface profilometer. The wavefront of the microlenses is measured by phase-shifting techniques using a Mach-Zehnder-like configuration. Thereby wavefront errors, focal lengths. point spread functions are obtained. The microlens with the diameter of $100\mu\textrm{m}$ has focal length of $164\mu\textrm{m}$ and spot diameter is less than $5\mu\textrm{m}$..

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.37-41
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• 1997

The optical property, the environmental stability and the crystallization of ZnS thin films prepared by ion-assisted deposition (IAD) were investigated and compared with those of conventional electron-beam deposited thin films. The humidity(R.H. 85%) test and the thermal(15$0^{\circ}C$) show that the IAD films have relatively higher refractive index, smaller extinction coefficient and environmentally more stable than the conventional films. It is believed to originate from the reduced adsorption of moisture which reflect the increased packing density and the improved microstructure by ion bombardment. XRD experiments also confirm that conventionally grown films have an amorphous in comparison with the crystalline structured IAD films.

• Current Optics and Photonics
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• v.1 no.4
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• pp.402-411
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• 2017

Combined LIBS-Raman spectroscopy has been widely studied, due to its complementary capabilities as an elemental analyzer that can acquire signals of atoms, ions, and molecules. In this study, the classification of polymorphs was performed by laser-induced breakdown spectroscopy (LIBS) to overcome the limitation in molecular analysis; the results were verified by Raman spectroscopy. LIBS signals of the $CaCO_3$ polymorphs calcite and aragonite, and $CaSO_4{\cdot}2H_2O$ (gypsum) and $CaSO_4$ (anhydrite), were acquired using a Nd:YAG laser (532 nm, 6 ns). While the molecular study was performed using Raman spectroscopy, LIBS could also provide sufficient key data for classifying samples containing different molecular densities and structures, using the peculiar signal ratio of $5s{\rightarrow}4p$ for the orbital transition of two polymorphs that contain Ca. The basic principle was analyzed by electronic motion in plasma and electronic transition in atoms or ions. The key factors for the classification of polymorphs were the different electron quantities in the unit-cell volume of each sample, and the selection rule in electric-dipole transitions. The present work has extended the capabilities of LIBS in molecular analysis, as well as in atomic and ionic analysis.

• Current Optics and Photonics
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• v.1 no.4
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• pp.358-363
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• 2017

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

• Korean Journal of Optics and Photonics
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• v.3 no.2
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• pp.133-136
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• 1992

Calculation and comparison of the design parameter between Chang and Ernst profile that can be used for the uniform discharge in excimer or TEA $Co_2$ laser are carried out. This result can be used to establish the initial $\kappa$-value in the design of electron. Also, calculation shows that Ernst profile is 2-3 times superior to Chang profile in uniformity of electric field with respect to the same k-value ($0.001\le\kappa\le0.25$).