• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.221-225
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• 1994

We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

• Journal of Welding and Joining
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• 제15권4호
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• pp.116-125
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• 1997

Electron beam weldability of 9%Ni steels has been investigated to apply EBW to the construction of LNG storage tank. While mechanical properties of welded joints were satisfied by ASTM specification, impact energy of weld metal was as low as 27 - 55J at $-196^{\circ}C$. As the result of Ni wires inserted at the joint to be welded, Ni content of weld metal was increased to about 10%, resulting on the improvement of impact toughness to 110 ~ 120J at $-196^{\circ}C$. This improvement of impact toughness in weld metal was due to the formation of tempered martensite and retained austenite. Above results indicate that, if Ni content of weld metal was increased about 10% by Ni wires addition, electron beam welded 9%Ni steels weld metal had sufficient impact energy necessary for a LNG storage tank.

• Bulletin of the Korean Chemical Society
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• 제18권3호
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• pp.296-300
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• 1997

The intracluster ion/molecule reactions within 1,1-difluoroethene homocluster have been studied by electron-impact quadrupole mass spectrometry. When CH2CF2 seeded in helium is expanded and ionized by electron impact, two different types of ion/molecule association (polymerization) reaction products, i.e., (CH2CF2)n+ (n≥l) and (CF2CH2)qX+ (X=fragment species, q≤n), are formed. The higher association products, (CH2CF2)n+ (n=3, 4), have shown stronger intensities over the lower association product, (CH2CF2)2+, in the low electron impact energy region ( < 39 eV). These stronger intensities are interpreted in terms of the stabilization of these ions due to the ring formations over the dimer ion in this energy region. The evidence of ring formation mechanism is on the basis of the intensity distribution of fragments at various electron impact energy. In another typical branched-chain growth reaction of these compounds, the F-shift reaction path is found to be more favorable energetically than the H-shift via the fragment patterns of clusters and semi-empirical calculation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.257-260
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• 1990

Monte Carlo simulations of electron impact ionization in silicon utilizing simple spherical band approximation including L valley are presented. The mean energy of electron at high electric field is lowered and the threshold energy of electron impact ionizaiotn is smeared out to $E_x$ by including L valley. This work also presents the importance of the modeling of L valley by calculating the electron population rate of it over the threshold energy of eletron impact ionization, which is higher than 10%

• 전자공학회논문지A
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• 제32A권3호
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• pp.100-109
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• 1995

A new Hydrodynamic model for the high energy tail electrons(Tail Electron Hydrodynamic Model : TEHD) is developed using the moment method. The Monte Carlo method is applied to a $n^{+}-n^{-}-n^{+}$ device to calibrate the TEHD equations. the discretization method and numerical procedures are explained. New models for the impact ionization and injection into the gate oxide using the tail electron density are proposed. The simulated results of the impact ionization rate for a $n^{+}-n^{-}-n^{+}$ device and MOSFET devices, and the gate injection experiment are shown to give good agreement with the Monte Carlo simulation and the measurements.

• 한국정보통신학회논문지
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• 제3권4호
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• pp.915-922
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• 1999

본 논문에서는 GaAs 풀밴드 E-k관계를 이용하여 전계방향에 따라 임팩트이온화가 전자전송에 미치는 영향을 분석하였다. E-k관계를 구하기 위하여 페르미황금법칙과 local form factor를 이용하는 의사포텐셜방법을 사용하였으며 임팩트이온화율을 구하기 위하여 브릴로우인영역을 사면체로 분할하여 각 사면체마다 적분하는 사면체방법을 이용하였다. 임팩트이온화의 이방성분석을 위하여 Monte Carlo시뮬레이션을 수행하였다. 특히 임팩트이온화의 과도상태분석을 수행한 결과, 이방성은 과도상태에서만 발생하는 것으로 나타났으며 정상상태에서는 등방성 특성을 보이는 것으로 나타났다. 본 연구에서 제시한 GaAs 임팩트이온화의 이방성특성은 GaAs 소자의 과도응답특성분석에 사용될 수 있으리라 사료된다.

• 전자공학회논문지D
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• 제35D권2호
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• pp.40-51
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• 1998

Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.34-34
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• 2010

Absolute electron-impact cross sections for molecular targets including their radicals are important in developing plasma reactors and testing various plasma processing gases. However, low-energy electron collision data for these gases are sparse and only the limited cross section data are available. In this presentation, the methods and the status of measurements of, mainly, absolute elastic cross sections for electron-polyatomic molecule collisions will be discussed with recent results from Chungnam National University. Elastic cross sections are essential for the absolute scale conversion of inelastic cross sections, as well as for testing computational methods.

• 한국정밀공학회지
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• 제32권4호
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• pp.387-394
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• 2015

We analyze heat generation as well as temperature distribution induced by accelerated electron impact on a target in a closed x-ray tube. For the sake of accuracy, we use Monte carlo analysis. This method gives accurate energy deposit in a medium with additional information such as secondary and backscattered electron as well as their paths. A Tungsten coated layer is divided by small rectangular cell which accumulate energy loss of primary electron beam. The cells and their accumulated energy datum are used for the input of finite element analysis. The Maximum temperature rising and temperature distribution were analyzed by transient heat analysis. Some temperature parameters such as target size and coating thickness were varied to investigate temperature sensitivity. Temperatures were compared each other to find primary variable that affect temperature rising on the x-ray target. The results will be helpful in development highresolution x-ray tube and related industries.

• 공업화학
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• 제22권6호
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• pp.711-717
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• 2011

전자충격반응을 고려한 three moment 플라즈마 모델과 전기적 중성성분의 반응을 고려한 유체 유동 모델을 결합하여 용량결합형 산소플라즈마에 대한 2차원적 전산모사 연구를 수행하였다. 전자의 에너지에 의하여 좌우되는 전자충격반응에 대한 반응속도는 전자와 $O_2$ 및 O 사이의 전자충돌단면적으로부터 계산되었다. 플라즈마 모델과 유체 유동 모델을 결합하고 상세한 반응메커니즘을 포함시킴으로써 전하를 띠는 전자와 이온($O_2{^+}$, $O^+$, $O_2{^-}$, and $O^-$) 그리고 기저상태의 산소($O_2$ and O)뿐만 아니라 $O_2(a^1{\Delta}_g)$, $O_2(b^1{{\Sigma}_g}^+)$, $O(^1D)$, $O(^1S)$ 등과 같이 산소플라즈마 특성에 중요한 역할을 하는 준안정상태 성분들의 시공간적 분포를 예측할 수 있었다. 또한 산소플라즈마의 전산모사로부터 sheath 경계에 이중층이 존재함을 확인할 수 있었다.