• Current Photovoltaic Research
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• 제2권4호
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• 신재생에너지
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• 제9권2호
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• pp.23-29
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• 2013

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• 대한전자공학회논문지
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• 제21권2호
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• pp.71-82
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• 1984

2차원 n-p-n 바이폴라 트랜지스터의 수치해석을 위한 프로그램(BIPOLE)을 개발하였다. 이 프로그램은 SRH와 Auger 재결합 기구들과 불순물 농도와 전계강도에 대한 운송자 이동도의 의존성과 밴드 갭 축소 효과들을 포함하고 있다. Poisson 방정식에는 Newton법을 또 정공과 전자의 연속 방정식에는 발산이론을 이용하여 여러가지 물리적인 제한없이 기본 반도체 방정식들에 대한 유한차분 공식들을 만들었다. 선형화된 방정식들의 계수 행렬은 희소 대칭 M 행렬이었는데 그 해를 구하기 위해 ICCG법과 Gummel의 알고리즘을 적용하였다. 이 프로그램 BIPOLE를 n-p-n 트랜지스터의 여러가지 정상 상태 문제에 적용시켰다. 그 응용의 보기로서 공통 에미터 전류이득의 변화, 에미터 용량에 대한 확산용량이 미치는 영향과 입출력 특성곡선들을 계산해 보았다. 전위 분포와 전자와 정공 농도분포와 같은 계산 결과를 3차원 컴퓨터 그래픽으로 도시하였다. 이 프로그램은 장차 2차원 트랜지스터의 교류 및 왜곡 현상의 수치해석의 기초로 이용될 것이며, 이 프로그램에 관심있는 모든 분들께 공급될 것이다.

• 한국진공학회지
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• 제22권5호
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• pp.238-244
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• 2013

태양전지 제조공정에서 열처리로 레이저를 사용하는 도핑공정은 태양전지의 성능을 결정짓는 중요한 요소이다. 그러나 퍼니스를 이용하는 공정에서는 선택적으로 고농도(Heavy) 도핑영역을 형성하기가 어렵다. 레이저를 사용한 선택적 도핑의 경우 고가의 레이저 장비가 요구되어지며, 레이저 도핑 후 고온의 에너지로 인한 웨이퍼의 구조적 손상 문제가 발생된다. 본 연구는 저가이면서 코로나 방전 구조의 대기압 플라즈마 소스를 제작하였고, 이를 통한 선택적 도핑에 관한 연구를 하였다. 대기압 플라즈마 제트는 Ar 가스를 주입하여 수십 kHz 주파수를 인가하여 플라즈마를 발생시키는 구조로 제작하였다. P-type 웨이퍼(Cz)에 인(P)이 shallow 도핑 된(120 Ohm/square) PSG (Phosphorus Silicate Glass)가 제거되지 않은 웨이퍼를 사용하였다. 대기압 플라즈마 도핑 공정 처리시간은 15 s와 30 s이며, 플라즈마 전류는 40 mA와 70 mA로 처리하였다. 웨이퍼의 도핑프로파일은 SIMS (Secondary Ion Mass Spectroscopy)측정을 통하여 분석하였으며, 도핑프로파일로 전기적 특성인 면저항(sheet resistance)을 파악하였다. 도펀트로 사용된 PSG에 대기압 플라즈마 제트로 도핑공정을 처리한 결과 전류와 플라즈마 처리시간이 증가됨에 따라 도핑깊이가 깊어지고, 면저항이 향상하였다. 대기압 플라즈마 도핑 후 웨이퍼의 표면구조 손상파악을 위한 SEM (Scanning Electron Microscopy) 측정결과 도핑 전과 후 웨이퍼의 표면구조는 차이가 없음을 확인하였으며, 대기압 플라즈마 도핑 폭도 전류와 플라즈마 처리시간이 증가됨에 따라 증가하였다.

• 한국진공학회지
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• 제18권2호
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• pp.79-84
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• 2009

삼극형(triode type) 전자 방출원을 프린팅된 CNT(Carbon Nanotube) 에미터를 이용하여 제작하였다. 후면노광(Back Exposure)방법으로 CNT 에미터의 높이를 균일하게 하고, 나노 Ag를 첨가하여 CNT와 전극 사이의 접착력 및 전기전도성을 높임으로써 고전압, 고전류 구동 시 신뢰성을 확보하였다. 게이트 높이가 에미터 길이에 비해 비교적 높은 매크로 게이트 구조를 사용하여 누설 전류가 적고 안정적인 구동이 가능하였다. 제작된 삼극형 전자 방출원은 DC 전압이 인가된 상태에서 일정시간동안 전계방출 전류를 측정하여 신뢰성을 평가하였다. 가열 배기 에이징(Aging) 과정을 거친 경우 약 12 시간동안 안정적인 전계방출 특성을 보였다. 이 때 게이트 누설전류는 약 10 % 미만이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• 전자공학회논문지D
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• 제35D권11호
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• pp.55-61
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• 1998

정공 전달 중합체인 Poly(N-vinylcarbazole) (PVK)와 전자전달 유기물 재료인 2-(4-biphenyl)-5-(t-butyl-phenyl)-1,3,4-oxadiazole (Bu-PBD)에 발광 유기물 색소 Coumurine 6, TPB, Rhodamine B를 각각 도핑한 단층박막 유기물 전기발광 소자를 제작하였다. 스핀 코팅 방법에 의한 단층 구조와 가용성 재료의 사용으로부터 소자제작이 간단하였다. 활성영역은 인듐주석산화물(ITO) 과 알루미늄 전극 사이에 놓인 단층으로 구성하고 있다. 이러한 구조에서 전자와 정공의 전하가 각 전극에서 PVK : Bu-PBD 활성층으로 주입된다. 전압을 인가한 후 발광된 빛의 색은 각각 TPB, C6, Rhodamine B의 유기물 색소에 의해 481nm, 500nm, 585nm 파장을 갖는 푸른색, 초록색 및 오렌지색을 나타내었다. PVK유기물은 다른 발광색을 갖는 유기물 색소를 분자 적으로 도핑 함으로서 주요한 중합체로서 사용될 수 있다. 그리고 전기발광색은 전체 가시광선 파장 내로 조절될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).