• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.130-135
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• 2012

The role of the electron diffusion on the stability of a Townsend discharge was investigated with the linear stability theory for the one-dimensional fluid equation with drift-diffusion approximation. It was proved that the discovered instability occurs as a result of the coupled action of electron diffusion and the perturbed electric field by space charge. The larger electron diffusion results in the faster growth rate at the regime of small perturbation of the electric field by space charges.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.251.2-251.2
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• 2013

Natural photosynthesis utilizes two proteins, photosystem I and photosystem II, to efficiently oxidize water and reduce NADP+ to NADPH. Artificial photosynthesis which mimics this process achieve water splitting through a two-step Z-schematic water splitting process using man-made synthetic materials for hydrogen fuel production. In this study, Z-scheme system was achieved from the hybrid materials which composed of hydrogen production part as photosystem I protein and water oxidizing part as semiconductor BiVO4. Utilizing photosystem I as the hydrogen evolving part overcomes the problems of existing hydrogen evolving p-type semiconductors such as water instability, expensive cost, few available choices and poor red light (>600 nm) absorbance. Some problems of photosystem II, oxygen evolving part of natural photosynthesis, such as demanding isolation process and D1 photo-damage can also be solved by utilizing BiVO4 as the oxygen evolving part. Preceding research has not suggested any protein-inorganic-hybrid Z-scheme composed of both materials from natural photosynthesis and artificial photosynthesis. In this study, to realize this Z-schematic electron transfer, diffusion step of electron carrier, which usually degrades natural photosynthesis efficiency, was eliminated. Instead, BiVO4 and Pt-photosystem I were all linked together by the mediator gold. Synthesized all-solid-state hybrid materials show enhanced hydrogen evolution ability directly from water when illuminated with visible light.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.564-570
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• 2006

Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.