• Title/Summary/Keyword: Electron behavior

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Thermal Deformation Analysis of Shadow Mask in a Flat TV and Prediction of Electron Beam Landing Shift by FEM (유한요소법에 의한 평면 TV 새도우마스크의 열변형해석 및 전자빔 오착 예측)

  • Kim, Jeong;Park, Soo-Kil;Kang, Beom-Soo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.11
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    • pp.2297-2304
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    • 2002
  • Two-dimensional and three-dimensional finite element methods have been used to analyze the deformation behavior of a shadow mask due to thermal and tension load. The shadow mask inside the Braun tube of a TV set has numerous slits through which the electron beams are guided to land on the designed phosphor of red, green or blue. Its thermal deformation therefore causes landing shift of the electron beam and results in decolorization of a screen. For the realistic finite element analysis, the effective thermal conductivity and the effective elastic modulus arc calculated, and then the shadow mask is modeled as shell without slits. Next a transient thermal analysis of the shadow mask is performed, wherein thermal radiation is a major heat transfer mechanism. Analysis of the resulting thermal deformation is followed, from which the landing shift of the electron beam is obtained. The present finite element scheme may be efficiently used to reduce thermal deformation of a shadow mask and in developing prototypes of a large screen flat TV.

Coating of amorphous nitrides on carbon nanotubes and field emission properties (탄소 나노튜브에 대한 비정질 질화막의 코팅 및 전계방출 특성)

  • Noh, Young-Rok;Kim, Jong-Pil;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1244_1245
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    • 2009
  • Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

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Facile preparation of self-assembled wool-based graphene hydrogels by electron beam irradiation

  • Park, Mira;Pant, Bishweshwar;Choi, Jawun;Park, Yong Wan;Lee, Chohye;Shin, Hye Kyoung;Park, Soo-Jin;Kim, Hak-Yong
    • Carbon letters
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    • v.15 no.2
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    • pp.136-141
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    • 2014
  • Three dimensional self-assembled graphene hydrogels were easily fabricated by electron beam irradiation (EBI) using an aqueous solution of wool/poly(vinyl alcohol) and graphene oxide (GO). After exposure to various levels of EBI radiation, the highly porous, self-assembled, wool-based graphene hydrogels were characterized using scanning electron microscopy and Fourier-transform infrared spectroscopy; to determine the gel fraction, degree of swelling, gel strength, kinetics-of-swelling analyses and removal of hexavalent chromium (Cr(VI)) from the aqueous solution. X-ray diffraction results confirmed that EBI played a significantly important role in reducing GO to graphene. The adsorption equilibrium of Cr(VI) was reached within 80 min and the adsorption capacity was dramatically increased as the acidity of the initial solution was decreased from pH 5 to 2. Changes in ionic strength did not exert much effect on the adsorption behavior.

Electrical Transport Properties of La0.5Sr0.5CrO3 Ceramics (La0.5Sr0.5CrO3 세라믹스의 전기전도특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.35-41
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    • 2016
  • The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

Ionization and Diffusion Coefficients in CH4 Gas by Simulation (시뮬레이션에 의한 CH4 기체의 전리 및 확산계수)

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.4
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    • pp.317-321
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    • 2014
  • This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron Ionization and diffusion Coefficients in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the 300[$^{\circ}K$] by the two term approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

The Analysis of Electron Energy Distribution Function in $CH_4$ Gas ($CH_4$ 기체의 전자에너지 분포함수 해석)

  • Kim, Sang-Nam;Seong, Nak-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05c
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    • pp.43-46
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    • 2004
  • This paper describes the information for quantitative simulation of weal이y ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron transport characteristic in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the $300[_{\circ}K]$ by the two tenn approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

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Effects of Rapid Thermal Annealing on the Conduction of a-IGZO Films (급속 열처리가 a-IGZO 박막의 전도에 미치는 영향)

  • Kim, Do-Hoon;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.1
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    • pp.11-16
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    • 2016
  • The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

Teliospore mucilage of Puccinia miscanthi revealed through the axial imaging of secondary electrons

  • Ki Woo Kim
    • Applied Microscopy
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    • v.51
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    • pp.15.1-15.2
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    • 2021
  • Puccinia miscanthi teliospores were observed on the leaf surface of Miscanthus sinensis using a field emission scanning electron microscope. Details of teliospore mucilage could be visualized through the axial imaging of secondary electrons for a better understanding of pathogen behavior in rust diseases.