• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.20-28
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• 2018

The time synchronization of each sub-unit of a pulsed generator is important to generate an output high-power radio frequency (RF) signal. To obtain the time synchronization between an input RF signal fed by an external source and an electron beam produced by an electric pulse generator, the influence of different charging voltages on a delay and a rise time of the output pulse waveform in the electric pulse generator should be carefully considered. This paper aims to study the timing characteristics of the delay and the rise time as a function of different charging voltages with a peak value of less than -35 kV in the high-voltage pulse generator, including a trigger generator (TG) and a pulse-forming line (PFL). The simulation has been carried out to estimate characteristics in the time domain, in addition to their output high-voltage amplitude. Experimental results compared with those obtained by simulation indicate that the delay of the output pulses of the TG and PFL, which are made by controlling the external triggering signal with respect to different charging voltages, is getting longer as the charging voltage is increasing, and their rise times are inversely proportional to the amplitude of the charging voltage.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.517-522
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• 2020

Electron beam have many factors that affect dose distribution, so even if identical settings are used, they should be identified and used for radiation treatment, and the effects on the structures in the body are sensitive, making it difficult to investigate uniform dose distribution on tumors. In this study, a dosimeter was produced using PbI₂ which is a photoelectric material, and electrical characteristics were analyzed for 6, 9, and 12 MeV electronics in linear accelerators. The reproducibility test results showed that RSD were 1.1215%, 1.0160%, and 0.05137% respectively at 6, 9, and 12 MeV energies, indicating that the output signals were stable. The linearity evaluation results showed that the R² values of the reliability indicator for straight line trend lines were 0.9999, 0.9999, and 0.9994, respectively, at 6, 9, and 12 MeV, to confirm that the output signal was proportional to PbI₂ as dose increased. The PbI₂ dosimeter in this study is judged to be highly applicable to electromagnet measurement and is thought to be able to be used as a basic study of electron detector through photoelectric material.

• Progress in Medical Physics
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• v.1 no.1
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• pp.109-122
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• 1990

A method of making inserts for shaped fields in electron beam therapy on the Mevatron KD 67-7467 Linear Acclerator is introduced. The inserts are made from an alloy called Lipowitz metal. These are designed to fit the inside of the standard Siemens cones. Studies have shown that this method does not adversely affect field flatness. However, if the ratio of shaped field to open field is greater than about 70%, the output dose is significantly changed by the inserts. Because the cone ratios for the fields do not follow the open cone ratio curves on the Mevatron KD 67-7467, we separated the cone ratio suggested by Biggs into two parts, the insert ratio and the cone factor. The dosimetry for these shaped beams has been investigated extensively.

• Progress in Medical Physics
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• v.3 no.2
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• pp.1-12
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• 1992

For intraoperative radiation therapy using electron beams, a cone system to deliver a large dose to the tumor during surgical operation and to save the surrounding normal tissue should be developed and dosimetry for the cone system is necessary to find proper X-ray collimator setting as well as to get useful data for clinical use. We developed a docking type of a cone system consisting of two parts made of aluminum: holder and cone. The cones which range from 4cm to 9cm with 1cm step at 100cm SSD of photon beam are 28cm long circular tubular cylinders. The system has two 26cm long holders: one for the cones larger than or equal to 7cm diamter and another for the smaller ones than 7cm. On the side of the holder is an aperture for insertion of a lamp and mirror to observe treatment field. Depth dose curve. dose profile and output factor at dept of dose maximum. and dose distribution in water for each cone size were measured with a p-type silicone detector controlled by a linear scanner for several extra opening of X-ray collimators. For a combination of electron energy and cone size, the opening of the X-ray collimator was caused to the surface dose, depths of dose maximum and 80%, dose profile and output factor. The variation of the output factor was the most remarkable. The output factors of 9MeV electron, as an example, range from 0.637 to 1.549. The opening of X-ray collimators would cause the quantity of scattered electrons coming to the IORT cone system. which in turn would change the dose distribution as well as the output factor. Dosimetry for an IORT cone system is inevitable to minimize uncertainty in the clinical use.

• Journal of the Korean Wood Science and Technology
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• v.24 no.4
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• pp.87-92
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• 1996

When cutting 2.0cm-thick red oak and hard maple with an air-jet-assisted carbon-dioxide laser of 2kW output power, maximum feed speed at the point of full penetration of the beam decreased with increasing the angle between grain and cutting direction. Feed speed averaged 3.75 and 3.38 meters per minute for red oak and hard maple, respectively. Gray-level of laser-cut surfaces were analyzed by image analysis system. The highest gray level of laser-cut surface was obtained when red oak was cut parallel to grain by laser. Surface profiler was used to scan the sawn and laser-cut surfaces. Center line average roughnesses of laser-cut surfaces were higher than those of sawn surfaces. Scanning electron micrographs showed the cell walls which were melted by laser.

• Current Optics and Photonics
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• v.2 no.5
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• pp.474-481
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• 2018

We propose a polarization phase-shifting technique to investigate the thickness of $Ta_2O_5$ thin films deposited on BK7 substrates, using a modified Sagnac interferometer. Incident light is split by a polarizing beam splitter into two orthogonal linearly polarized beams traveling in opposite directions, and a quarter-wave plate is inserted into the common path to create an unbalanced phase condition. The linearly polarized light beams are transformed into two circularly polarized beams by transmission through a quarter-wave plate placed at the output of the interferometer. The proposed setup, therefore, yields rotating polarized light that can be used to extract a relative phase via the self-reference system. A thin-film sample inserted into the cyclic path modifies the output signal, in terms of the phase retardation. This technique utilizes three phase-shifted intensities to evaluate the phase retardation via simple signal processing, without manual adjustment of the output polarizer, which subsequently allows the thin film's thickness to be determined. Experimental results show that the thicknesses obtained from the proposed setup are in good agreement with those acquired by a field-emission scanning electron microscope and a spectroscopic ellipsometer. Thus, the proposed interferometric arrangement can be utilized reliably for non-contact thickness measurements of transparent thin films and characterization of optical devices.

• The Journal of Korean Society for Radiation Therapy
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• v.17 no.1
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• pp.57-71
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• 2005

Purpose : To evaluate radiation dose and accuracy with TLD and diode detector when treat total skin with electron beam. Materials and Methods : Using Stanford Technique, we treated patient with Mycosis Fungoides. 6 MeV electron beam of LINAC was used and the SSD was 300 cm. Also, acrylic speller(0.8 cm) was used. The patient position was 6 types and the gantry angle was 64, 90 and $116^{\circ}$. The patient's skin dose and the output were detected 5 to 6 times with TLD and diode. Result : The deviations of dose detected with TLD from tumor dose were CA $+\;6\%$, thigh $+\;8\%$, umbilicus $+\;4\%$, calf $-\;8\%$, vertex $-\;74.4\%$, deep axillae $-\;10.2\%$, anus and testis $-\;87\%$, sole $-\;86\%$ and nails shielded with 4mm lead $+4\%$. The deviations of dose detected with diode were $-4.5\%{\sim}+5\%$ at the patient center and $-1.1\%{\sim}+1\%$ at the speller. Conclusion : The deviation of total skin dose was $+\;8\%{\sim}-\;8\%$ and that deviation was within the acceptable range(${\pm}\;10\%$). The boost dose was irradiated for the low dose areas(vertex, anus, sole). The electron beam output detected at the sootier was stable. It is thought that the deviation of dose at patient center detected with diode was induced by detection point and patient position.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.5
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• pp.639-642
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• 2013

In this paper, proposed NED(nuclear event detectors) for detection of a transient radiation. Nuclear event detector was blocked of power temporary for defence of critical damage at a electric device when a induced transient radiation. Conventional NED consist of BJT, resistors and capacitors. The NED supply voltage of 5V and MCM(Multi Chip Module) structures. The proposed NED were designed for low supply voltage using 0.18um CMOS process. The response time of proposed NED was 34.8ns. In addition, pulse radiation experiments using a electron beam accelerator, the output signal has occurred.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.