• Title/Summary/Keyword: Electron beam lithography

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Estimation of Sensitivity Enhancements of Material-Dependent Localized Surface Plasmon Resonance Sensor Using Nanowire Patterns (금속물질에 따른 나노구조를 이용한 국소 표면 플라즈몬 공명 센서 특성 분석)

  • Ahn, Heesang;Ahn, Dong-Gyu;Song, Yung Min;Kim, Kyujung
    • Journal of the Korean Society for Precision Engineering
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    • v.33 no.5
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    • pp.363-369
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    • 2016
  • We explored localized plasmonic field enhancements using nanowire patterns to improve the sensitivity of a surface plasmon resonance (SPR) sensor. Two different materials, gold and silver, were considered for sample materials. Gold and silver nanowire patterns were fabricated by electron beam lithography for experimental measurements. The wavelength SPR sensor was also designed for these experiments. The material-dependent field enhancements on nanowire patterns were first calculated based on Maxwell's equations. Resonance wavelength shifts were indicated as changes in the refractive index from 1.33 to 1.36. The SPR sensor with silver nanowire patterns showed a much larger resonance wavelength shift than the sensor with gold nanowire patterns, in good agreement with simulation results. These results suggest that silver nanowire patterns are more efficient than gold nanowire patterns, and could be used for sensitivity enhancements in situations where biocompatibility is not a consideration.

Magnetic Force Microscopy (MFM) Study of Remagnetization Effects in Patterned Ferromagnetic Nanodots

  • Chang, Joon-Yeon;Fraerman A. A.;Han, Suk-Hee;Kim, Hi-Jung;Gusev S. A.;Mironov V. L.
    • Journal of Magnetics
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    • v.10 no.2
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    • pp.58-62
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    • 2005
  • Periodic magnetic nanodot arrays were successfully produced on glass substrates by interference laser lithography and electron beam lithography methods. Magnetic force microscopy (MFM) observation was carried out on fabricated nanodot arrays. MFM tip induced magnetization effects were clearly observed in ferromagnetic elliptical nanodots varying in material and aspect ratio. Fe-Cr dots with a high aspect ratio show reversible switching of the single domain magnetization state. At the same time, Co nanomagnets with a low aspect ratio exhibit tip induced transitions between the single domain and the vortex state of magnetization. The simple nanolithography is potentially an efficient method for fabrication of patterned magnetic arrays.

High-Aspect-Ratio Nanoscale Patterning in a Negative Tone Photoresist

  • Ryoo, Kwangki;Lee, Jeong Bong
    • Journal of information and communication convergence engineering
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    • v.13 no.1
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    • pp.56-61
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    • 2015
  • The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

Fabrication and Performance of Electron Cyclotron Resonance Ion Milling System for Etching of Magnetic Film Device (자성박막 소자 에칭용 전자 사이클로트론 공명 이온밀링 시스템 제작과 특성연구)

  • Lee, Won-Hyung;Hwang, Do-Guwn;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
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    • v.25 no.5
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    • pp.149-155
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    • 2015
  • The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

Study on an Electrostatic Deflector for Ultra-miniaturized Microcolumn to Realize sub-10 nm Ultra-High Resolution and Wide Field of View (10 nm 이하 초고해상도와 광폭 관측시야를 구현하기 위한 극초소형 마이크로컬럼용 정전형 디플렉터 연구)

  • Lee, Hyung Woo;Lee, Young Bok;Oh, Tae-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.29-37
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    • 2021
  • A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.

Fabrication of Nanoscale Reusable Quartz Master for Nano Injection Molding Process (재사용 가능한 100nm급 패턴의 퀄츠 마스터 제작 및 퀄츠 마스터를 사용한 사출성형실험)

  • Choi Doo-Sun;Lee Joon-Hyoung;Yoo Yeong-Eun;Je Tae-Jin;Whang Kyung-Hyun;Seo Young Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.2 s.233
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    • pp.228-231
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    • 2005
  • In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

A study on the resist characteristics of plasma polymerized thin film of (MMA-Sty-TMT) (플라즈마중합 (MMA-Sty-TMT) 박막의 레지스트 특성조사)

  • Park, J.K.;Park, S.H.;Park, B.G.;Jung, H.D.;Han, S.O.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1268-1270
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    • 1994
  • Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

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A Study on Surface Fabrication of Super Hydrophobic using Pico Second Laser (피코초 레이저를 이용한 초소수성 표면 제작에 관한 연구)

  • Cho, Il-Hwan;Lee, Jae-Hoon;Noh, Ji-Whan;Lee, Seoung-Won
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.2
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    • pp.161-169
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    • 2012
  • Recently, a study for the functional surface production of super hydrophobic of natural and biomimetic artificial has attracted much attention. To make process methods of super hydrophobic surface has a variety of ways such as lithography, etching, and laser ablation. However, we were used ultra-shot pulse laser ablation process which has the virtue of more environmental friendliness and simple process. In this paper, we were fabricated a multiplicity of super hydrophobic patterns on mold surface(NAK80) using by optimizing the laser processing conditions and it was transferred on PDMS. Also, we measured contact angle super hydrophobic patterns on PDMS. The result showed there is no patterns on PDMS were measured 94 degrees, by contrast, optimized super hydrophobic patterns on PDMS was 157 degrees. Therefore we fabricated super hydrophobic surface on mold. Based on these experimental results, it is possible to mass production using ultra shot pulse laser ablation of super hydrophobic pattern and to be applied for a variety of industries.

High Resolution Patternning for Graphene Nanoribbons (GNRs) Using Electro-hydrodynamic Lithography

  • Lee, Su-Ok;Kim, Ha-Nah;Lee, Jae-Jong;Kang, Dae-Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.198-198
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    • 2012
  • Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

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