• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.220-220
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• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.47-54
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• 2012

In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are $11.2{\Omega}$ of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.271-271
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• 2014

본 연구에서는 최근 다양한 전자 소자로써의 연구가 진행되고 있는 그라핀을 SiO2/Si 기판 위에 전자빔 식각(Electron-Beam Lithography)을 이용하여 후면 게이트 전극 구조의 그라핀 채널을 갖는 삼단자 소자를 형성하고 가스 유입이 가능한 진공 Probe Measurement System을 이용하여 금속 전극과 그라핀 간의 접촉저항 (Rc) 및 길이가 다른 채널저항(Rch)를 구하고, 채널 길이, 가스 유량, 온도, 게이트 전압에 따른 I-V 변화를 측정함으로써, 후면 게이트 전극 구조의 그라핀 채널을 갖는 삼단자 소자의 가스 센서로서의 가능성을 연구하였다. 후면 게이트 전극 구조의 그라핀 채널을 갖는 삼단자 소자는 전자빔 식각(Electron-Beam Lithography)에 의해 패턴을 제작하고 Evaporator를 이용하여 전극을 증착 하였다. 소자의 소스 (Source)와 드레인 (Drain)은 TLM (Transfer Length Method)패턴을 이용하여 인접한 두 개의 전극간 범위를 변화시키는 형태로 제작함으로써 소스-드레인간 채널 길이가 다르게 하였다. 이 때 전극의 크기는 가로, 세로 각각 $20{\mu}m$, $40{\mu}m$이며 전극간 간격은 $20/30/40/50/60{\mu}m$로 서로 다르게 배열 하였다. 제작된 그라핀 소자는 진공 Probe Measurement System 내에서 게이트 전압(VG)를 변화시킴으로써 VG 변화에 따른 소자의 특성을 평가하였는데, mTorr 상태의 챔버 내로 O2 가스를 주입하여 그라핀의 Dangling bond 및 Defect site에 결합 된 가스로 인한 전기적 특성의 변화를 측정하고, 이 때 가스의 유량을 50 sccm에서 500 sccm 까지 변화시킴으로써 전기적 특성 변화를 측정하여 센서 소자의 민감도를 평가하였다. 또한, 서로 다르게 배열한 소스-드레인 간의 채널 길이로 인하여 채널과의 접촉 면적에 따른 센서 소자의 민감도 또한 평가할 수 있었다. 그리고 챔버 내 온도를 77 K에서 400 K까지 변화시킴으로써 온도에 따른 소자의 작동 범위를 확인하고 소자의 온도의존성을 평가하였다.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.11
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• pp.1794-1798
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• 2004

We present a fabrication method of high aspect ratio 100nm-scale nickel stamper using e-beam writing for the injection molding of optical grating patterns. Conventional nickel stamper is fabricated by nickel electroplating process which is followed by seed layer deposition. In this paper, we have used chrome coated blank mask without anti-reflection layer of CrON in order to simplified electroplating process. In experimental study, we have optimized electron-beam dosage for 100nm-scale optical grating patterns with 2.5-aspect ratio, and fabricated nickel stamper using above grating patterns as PR mold. Fabricated nickel stamper have showed height of 240$\pm$20nm and width of 116$\pm$6nm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.223-226
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• 2004

Injection molding using plastic materials was expected to mass production of structure with nano pattern for low cost phase. The PDMS mold was produced easily and uniformly by using thermal embossing. Quartz master for embossing method was made using electron beam lithography it had 100-500 nm size of line and dot type. The PDMS mold was produced after a brief hardening process and the master removal. The results show that various patterns are successfully fabricated the nano scale.. The replicated mold would be useful a stamper fabrication for injection molding.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.42-45
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• 2016

A two-dimensional metal hole array (2DMHA) structure is fabricated by conventional photo-lithography and electron beam evaporation. The transmittance of the 2DMHA is measured at long wave infrared (LWIR) wavelengths (${\lambda}{\sim}10$ to $24{\mu}m$). The 2DMHA sample shows transmittance of 70 and 67% at $15.4{\mu}m$ due to plasmonic resonance with perforated silver and gold thin films, respectively, under surface normal illumination at LWIR wavelengths. The measured infrared spectrum is separated into two peaks when the size of the hole becomes larger than a half-pitch of the hole array. Six degenerated plasmon modes (1,0) at the metal/Si surface split to three modes at an incident beam angle of $45^{\circ}$ with respect to the surface normal direction, and wavelength shifts of the transmitted spectrum are observed in a red shift and blue shift at the same time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.575-577
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• 1999

In this study, the PPPI(Plasma Polymerized Phenyl Isothiocyanate) resist thin film was manufactured in accordance with the plasma polymerization method and after exposing it to an electron beam, a pattern was formed by plasma etching. With the FT-IR(Fourier transform-infrared spectrometry) analysis, it was confirmed that the PI(Phenl Isothiocyanate) monomer was successsfully produced into a thin film by the plasma. The polymerization rate of the thin film was 450~ 1012($\AA$/min) to 100-200(W) discharge power and 120-12($\AA$/min) to 0.1 ~0.4[torr] system pressure.