• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.569-574
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• 2014

Inverted bulk hetero-junction polymer solar cells (iPSC) composed of P3HT/PC61BM blends on the ZnO modified with benzoic acid derivatives-based self-assembled monolayers (SAM) are fabricated. Compared with the device using the pristine ZnO, the devices with ZnO surface modified SAMs derived from benzoic acid such as 4-(diphenylamino)benzoic acid (DPA-BA) and 4-(9H-carbazol-9-yl)benzoic acid (Cz-BA) as an electron transporting layer show improved the performances. It is mainly attributed to the favorable interface dipole at the interface between ZnO and the active layer, the eective passivation of the ZnO surface traps, decrease of the work function and facilitating transport of electron from PCBM to ITO electrode. The power conversion eciency (PCE) of iPSCs based on DPA-BA and Cz-BA treated ZnO reaches 2.78 and 2.88%, respectively, while the PCE of the device based on untreated ZnO is 2.49%. The open circuit voltage values ($V_{oc}$) of the devices with bare ZnO and SAM treated ZnO are not much different. Whereas, higher the fill factor (FF) and lower the series resistance ($R_s$) are obtained in the devices with SAMs modification.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• 전기학회논문지
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• 제67권6호
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.108-111
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• 2004

An efficiency and brightness of the Organic Light-emitting Diodes(OLEDs) by insertion of the novel layer between a singlet emitter and an electron transporting layer without doping processes, has been improved. The novel layers named as the K-M1 and K-M2 layers have shown the excellent improvement in the carrier balance and recombination efficiency. New devices using the K-M1 and K-M2 layers have shown a high efficiencies of over 15cd/A and 61m/W$(at\;20mA/cm^2)$, and brightness of over $16,000cd/m^2(at\;100mA/cm^2)$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1236_1237
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• 2009

Organic light emitting diode (OLED) is currently the focus of intense interest in the field of photonics. It is attractive for the in low-operating voltage, low power consumption, easy fabrication and low cost. A typical OLED consists of one or more organic layers sandwiched between a high work function anode, such as indium tin oxide (ITO), and a low work function cathode such as Ca, Mg:Ag, and Al. Tris-(8-hydroxy)quinolinealuminum ($Alq_3$) has taken a prominent position in the development of OLED due to its relative stability as an electron transporting and emitting material. We investigated an efficiency improvement of the OLED depending on thickness variation of $Alq_3$.

• Macromolecular Research
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• 제17권5호
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• pp.319-324
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• 2009

A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.68-69
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• 2011

The process of charge transfer at the interface between two semiconductors or between a metal and a semiconductor plays an important role in many areas of technology. The optimization of such devices requires a good theoretical description of the interfaces involved. This, in turn, has motivated detailed mechanistic studies of interfacial charge-transfer reactions at metal/organic, organic/organic, and organic/inorganic semiconductor heterojunctions. Charge recombination of photo-induced electron with redox species such as oxidized dyes or triiodide or cationic HTM (hole transporting materials) at the heterogeneous interface of $TiO_2$ is one of main loss factors in liquid junction DSSCs or solid-state DSSCs, respectively. Among the attempts to prevent recombination reactions such as insulating thin layer and lithium ions-doped hole transport materials and introduction of co-adsorbents, although co-adsorbents retard the recombination reactions as hydrophobic energy barriers, little attention has been focused on the anchoring processes. Molecular engineering of heterogeneous interfaces by employing several co-adsorbents with different properties altered the surface properties of $TiO_2$ electrodes, resulting to the improved power conversion efficiency and long-term stability of the DSSCs. In this talk, advantages of the coadsorbent-assisted sensitization of N719 in preparation of DSSCs will be discussed.

• Current Applied Physics
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• 제18권12호
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• pp.1564-1570
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• 2018

Charge transport dynamics in ZnO based inverted organic solar cell (IOSC) has been characterized with transient photocurrent spectroscopy and localised photocurrent mapping-atomic force microscopy. The value of maximum exciton generation rate was found to vary from $2.6{\times}10^{27}m^{-3}s^{-1}$ ($J_{sat}=79.7A\;m^{-2}$) to $2.9{\times}10^{27}m^{-3}s^{-1}$ ($J_{sat}=90.8A\;m^{-2}$) for devices with power conversion efficiency ranging from 2.03 to 2.51%. These results suggest that nanorods served as an excellent electron transporting layer that provides efficient charge transport and enhances IOSC device performance. The photovoltaic performance of OSCs with various growth times of ZnO nanorods have been analysed for a comparison between AM1.5G spectrum and local solar spectrum. The simulated PCE of all devices operating under local spectrum exhibited extensive improvement with the gain of 13.3-3.7% in which the ZnO nanorods grown at 15 min possess the highest PCE under local solar with the value of 2.82%.

• Applied Microscopy
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• 제30권4호
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• pp.377-387
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• 2000

뇌실을 감싸는 뇌실막층은 대부분이 일반적인 뇌실막 세포로 이루어졌으나, 이들 세포 사이에 간혹 띠뇌실막 세포(tanycyte)가 분포하고 있다. 띠뇌실막세포는 일반적인 뇌실막세포와는 달리 뇌의 실질로 뻗은 매우 긴 기저돌기를 갖고 있다. 특히 제3뇌실의 뇌실막층에서 주로 연구된 띠뇌실막세포는 뇌실과 뇌실질의 혈관 혹은 신경세포와의 사이에 물질교환을 담당하는 것으로 추측되고 있으며, 띠뇌실막세포는 일반적인 뇌실막세포와는 달리 glial fibrillary acidic protein(GFAP)항체에 대해 양성반응을 보이는 것으로 알려져 있다. 본 연구는 면역조직화학 및 면역금표지법을 이용하여 박쥐 맨아래구역을 감싸는 뇌실막층에서 GFAP 항체에 대해 양성반응을 보이는 세포의 분포여부 및 이의 미세 구조를 확인하고자 시행하여 다음과 같은 결론을 얻었다. 세로 절단한 절편을 대상으로 GFAP 항체를 이용하여 면역염색한 후 광학현미경으로 확인한 결과 맨아래구역을 감싸는 뇌실막층에 GFAP 양성반응을 보이는 세포가 관찰되었으며, 특히 맨아래구역의 목부분에서 양성반응 세포가 많이 모여 있었다. GFAP양성반응을 보이는 세포들은 매우 긴 기저돌기를 갖고 있었으며, 기저돌기에서도 매우 강한 GFAP 양성반응을 보였다. 세포체에서는 주변부에서 양성반응을 보였다. 전자현미경하에서 맨아래구역 띠뇌실막세포는 주로 ependymal tanycytes였으며, 자유면에 소수의 미세융모 및 세포질돌기가 관찰되었으나, 섬모는 관찰되지 않았다. 기저부에 특징적으로 긴 기저돌기를 갖고 있었으며 이 돌기에는 중간세사 및 세로로 길게 달리는 사립체가 발달되어 있었고, 세포체와 돌기에 지방방울이 산재되어 있었다. 금입자를 표지한 GFAP항체를 사용하여 면역 염색한 후 전자현미경으로 관찰한 결과 세포체에서 핵을 둘러싸는 중간세사에서 금입자를 관찰할 수 있었으며, 나머지 핵을 비롯한 다른 세포소기관이나 세포질에서는 관찰되지 많았다. 또한 기저돌기에서도 중간세사에서만 금입자를 관찰할 수 있었다. 이와 같은 본 실험의 결과는 박쥐 맨아래구역 뇌실막층에도 띠뇌실막세포가 존재하고 있으며, 이 세포의 발달된 긴 기저돌기는 띠뇌실막세포가 일반적인 뇌실막세포와는 다른 기능을 동면동물인 박쥐의 맨아래구역에서도 수행하고 있음을 암시하고 있으나 이를 확인하기 위해서 더욱 자세한 연구가 필요한 것으로 사료된다.

• 한국결정성장학회지
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• 제20권3호
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• pp.107-112
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• 2010

높은 광흡수 계수를$(1{\times}10^5cm^{-1})$ 가지는 CIGS는 Ga의 비율에 따라서 밴드갭을 조절할 수 있다는 장점을 지니고 있다. CIGS의 밴드갭은 Ga의 비율에 따라 $CuInSe_2$(Eg: 1.0 eV)에서 $CuGaSe_2$(Eg: 1.68 eV)까지의 범위에 존재하며, 태양전지에 서 이상적인 fill factor 모양을 가지도록 Ga의 비율을 높게 조성한다. CIGS 흡수층을 제작하는 방법에는 co-evaporator 방식이 가장 널리 사용되며 연구되고 있다. 이에 본 연구에서는 수평 형태의 hydride vapor transport (HVT)법을 고안하여 CIGS 나노 구조 및 에피성장을 시도하였다. HVT법은 $N_2$ 분위기에서 원료부의 CIGS 혼합물을 HCl과 반응시켜 염화물 기체상태로 변환 후 growth zone까지 이동하여 성장을 하는 방식이다. 성장기판은 c-$Al_2O_3$ 기판과 u-GaN을 사용하였다. 성장 후 field emission scanning electron microscopy(FE-SEM)과 energy dispersive spectrometer(EDS)를 이용하여 관찰하였다.