• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.33-38
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• 2007

We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

• Composites Research
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• v.27 no.5
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• pp.183-189
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• 2014

Experimental considerations have been performed to obtain the clear optical microscopic images of graphene oxide which are useful to probe its quality and morphological information such as a shape, a size, and a thickness. In this study, we investigated the contrast enhancement of the optical images of graphene oxide after hydrazine vapor reduction on a Si substrate coated with a 300 nm-thick $SiO_2$ dielectric layer. Also, a green-filtered light source gave higher contrast images comparing to optical images under standard white light. Furthermore, it was found that a image channel separation technique can be an alternative to simply identify the morphological information of graphene oxide, where red, green, and blue color values are separated at each pixels of the optical image. The approaches performed in this study can be helpful to set up a simple and easy protocol for the morphological identification of graphene oxide using a conventional optical microscope instead of a scanning electron microscopy or an atomic force microscopy.

• Journal of the Korea Concrete Institute
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• v.20 no.4
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• pp.415-421
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• 2008

Reinforced concrete starts to corrode when the chloride ion concentration which is the sum of included in concrete and penetrated from environments exceeds a certain level of critical chloride concentration. Therefore each country regulates the upper bounds of chloride amount in concrete and the regulations are different for each country due to its circumstances. In this study, the critical threshold chloride content according to unit cement amount is empirically calculated to propose a reasonable regulation method on the chloride amount. As a result, the critical threshold chloride content increases considerably according to cement content and it agrees with the established theories. The present regulations on total chloride amount 0.3 or 0.6 kg chloride ions per $1\;m^3$ of concrete does not reflect the influences of mix design, environmental conditions and etc. So it can be said that it is more reasonable to regulate the critical threshold chloride content by the ratio of chloride amount per unit cement content than by the total chloride content in $1\;m^3$ of concrete.

• Journal of the Korea Institute of Building Construction
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• v.20 no.1
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• pp.1-9
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• 2020

Chloride ion, which penetrates into the cement composites from the outside, generally diffuses by the concentration gradient. Chloride ions are adsorbed by the chemical reaction with cement hydrates. Recent studies have shown that anion exchange resin (AER) powder can effectively adsorb the chloride ion in the cement composites, and thus, the cement composites containing AER have a high chloride adsorption capacity and a good resistance for chloride penetration. In this study, the chloride adsorption ability of the AER powder was investigated under the conditions of distilled water and calcium hydroxide saturated solution to determine if the AER powder is less effective to increase the chloride adsorption ability after grinding process. The chloride adsorption ability of AER powder was compared with the previous research about the chloride adsorption of AER bead. In addition, the compressive strength, chloride diffusion coefficient (using NT Build 492 method), and the chloride profile of cement mortar substituted with AER powder were investigated. There was no decrease in the chloride adsorption capacity of AER powder but increase in the kinetic property for chloride adsorption after the grinding process. The AER powder could absorb the chloride ion in the mortar quickly, and showed better chloride ion adsorption ability than the cement hydrates.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.331-342
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• 2009

Groundwater samples were collected from the bedrock aquifers related with Okcheon metasedimentary rocks. Arsenic (As) concentrations in the samples varied between 0.0051 and 0.887 mg/L, with an average of 0.0248. Cations and anions of groundwaters had no relationship with As contents as well as with spatial distribution of geology in the area. Pyrite, chalcopyrite and arsenopyrite in the core samples of the monitoring wells were identified in thin section, X-ray diffraction (XRD) and electron probe microscope analysis (EPMA). It was suggested that these minerals are responsible for the As in groundwater. The groundwater showed saturations with respect to calcite $(CaCO_3)$, dolomite (CaMg$(CO_3)_2$) and Magnesite $(MgCO_3)$. $HAsO_4{^{2-}}$ activities in the groundwater samples were close to $Ca_3(AsO_4)_2(c)$ and $Mn_3(AsO_4)_2(c)$ solubility isotherms, indicating that the maximum As contents in groundwater are secondly controlled by the precipitation and dissolution of carbonate minerals due to alkaline and oxic nature of the groundwater (pe+pH>10).

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• Analytical Science and Technology
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• v.17 no.4
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• pp.355-362
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• 2004

Fission products and Inter reaction layer of $U_3Si-Al$ dispersion fuel, irradiated in HANARO research reactor with 121 kW/m of maximum liner power and 63 at% of average burn-up, was characterization by EPMA (Electron Probe Micro Analyzer). The fuel punching system developed by Irradiated Materials Examination Facility (IMEF) has used to make these samples for the EPMA. With this system a very small and thin specimen which is 1.57 mm in diameter and 2 mm in thickness respectively has been fabricated to protect the EPMA operator from high radioactive fuel and to mini-mize the equivalent dose rate less than 150 mSv/h. EPMA was performed to observe layers of sectional, Inter-reaction and oxide with specimens of cutting and polished. Stoichiometry in the Inter-reaction layer with $16{\mu}m$ of thickness was $U_{2.84}$ Si $Al_{14}$ with calibration of $UO_2$ and $U_{3.24}$ Si $Al_{14.1}$ with calibration of standard specimen. metallic precipitates in this layer were not observed using fission products examination.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.195-195
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• 2000

TFT-LCD의 제조공정은 박막층의 식각 공정에 대해 기존의 습식 공정을 대치하는 건식식각이 선호되고 있다. 건식 식각 공정은 반도체 공저에 응용되면서 소자의 최소 선폰(CD)이 감소함에 따라 유도결합셩 프라즈마를 비롯한 고밀도 플라즈마 이용한 플라즈마 장비 사용이 증가하는 추세이다. 여기에 평판디스플레이의 공정을 위해서는 대면적과 사각형 기판에 대한 균일도를 보장할 수 있는 고밀도의 균일한 플라즈마 유지가 중요하다. 본 실험에서는 자장강화된 유도결합형 플라즈마의 플라즈마 밀도 및 균일도를 살펴보고 TFT-LCD에 gate 전극으로 사용되는 Al-Nd 박막의 식각을 통하여 식각균일도와 식각속도 및 식각 선택도 등의 건식 식각 특성을 보고자 한다. 영구자석 및 전자석의 설치는 사각형의 유도결합형 플라즈마는 소형 영구자석을 배열하여 부착하였으며, 외부에는 chamber와 같이 사각형태의 전자석을 500mm$\times$500mm의 크기를 갖는 z축 방향의 Helmholtz형으로 제작하였다. 더. 영구자석 배열에 대해서는 자석간의 거리와 세기 변화를 조합하여 magnetic cusping의 변화를 주었으며 전자석의 세기는 전류값을 기준으로 변화시켜 보았다. 실험을 통하여 플라즈마 균일도를 5% 이하로 개선하고 이러한 균일도를 유지하며 플라즈마 밀도를 높일 수 있는 조건을 찾을 수 있었다. 이러한 적합화된 조건에서 저장강화된 유도결합형 프라즈마를 Al-Nd 박막 식각에 응용한 결과, Al-Nd의 식각속도 및 식각 선택도는 유도결합형 프라즈마에 비해 크게 증가하였으며, 식각균일도가 개선되는 것을 관찰하였다. 또한 electrostatic probe(Hiden, Analytical)를 이용하여 Al-Nd 식각에 사용된 반응성 식각가스에 대한 저장강화된 유도결합형 플라즈마의 특성 분석을 수행하였다.c recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.을 알 수 있