• Journal of Photoscience
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• v.11 no.3
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• pp.107-113
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• 2004

Synthesis, absorption and fluorescence properties of 3-methyl indole (1), N-(benzenesulfonyl)-3-(3-oxo-but-1-enyl)-indole (2) and 1H-3-(3-oxo-but-1-enyl)-indole (3) are described. Extended conjugation at C-3 of indole as in 3 causes moderate resolution of $^1L_a$ and $^1L_b$ bands. However, 2 having an electron-withdrawing group at indolic nitrogen shows only the $^1L_a$ band. While the $^1L_b$ band largely remains solvent polarity independent, the $^1L_a$ band undergoes moderate red shift in polar solvents. The fluorescence in 2 and 3 originates from the $L_b$ transition. Additionally, interaction of 2 and 3 with BSA indicates that these compounds bind to the hydrophobic site of BSA with the formation of a highly fluorescent BSA-probe complex.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.3
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• pp.34-39
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• 1999

Electron temperature and electron density were rreasured in a radio-frequency inductively coupled plasma (RFICP) using a Langmuir probe method. Measurerrent was conducted in an argon discharge for pressures from 10 mTorr to 40 mTorr and input rf rnwer from 100 W to 600 W. Spatial distribution electroo temperature and electron density were rreasured for discharge with satre aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power. Electron density was increased with iocreasing input power, but saturated at 450 W. Electron density was iocreased with iocreasing pressure. Radial distribution of the electron density was peaked at the rnsition which was a little rmved from center toward quartz window. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. The above results could contribute to understand the Mechanism of Radio-Frequency Inductively Discharge Plasma.Plasma.

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.42.2-43
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• 2016

Electrostatic fluctuations near upper-hybrid frequency, which are sometimes accompanied by multiple-harmonic electron cyclotron frequency bands above and below the upper-hybrid frequency, are common occurrences in the Earth's radiation belt, as revealed through the twin Van Allen Probe spacecraft. In the literature upper-hybrid emissions are used for estimating the background electron density, which in turn can be used to determine the plasmapause locations, but the role of energetic electrons in generating such fluctuations has not been discussed. The present paper carries out detailed analyses of data from the Waves instrument, which is part of the Electric and Magnetic Field Instrument Suite and Integrated Science (EMFISIS) suite onboard the Van Allen Probes. Combined with theoretical calculation, it is demonstrated that the peak intensity associated with the upper-hybrid fluctuations is predominantly determined by tenuous but energetic electrons, and that denser and less energetic background electrons do not contribute much to the peak intensity. This finding shows that upper-hybrid fluctuations detected during quiet time are useful not only for the determination of the electron density, but also they contain information on the ambient energetic electron population as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.91-95
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• 2006

In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• Applied Microscopy
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• v.45 no.4
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• pp.236-241
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• 2015

Carbon-coated Ni, Cu and Sn nanocapsules were investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and a four-point probe device. All of these nanocapsules were prepared by an arc-discharge method, in which the bulk metals were evaporated under methane ($CH_4$) atmosphere. Three pure metals (Ni, Cu, Sn) were typically diverse in formation of the carbon encapsulated nanoparticles and their different mechanisms were investigated. It was indicated that a thick carbon layers formed on the surface of Ni(C) nanocapsules, whereas a thin shell of carbon with 1~2 layers covered on Cu(C) nanocapsules, and the Sn(C) nanocapsules was, in fact, a longger multi-walled carbon nanotubes partially-filled with metal Sn. As one typical magnetic/dielectric nanocomposite particles, Ni(C) nanocapsules and its counterpart of oxide-coated Ni(O) nanocapsules were compared in the electrically conductive behaviors for further applications as the electromagnetic materials.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.82-86
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• 1999

Electron Energy Distribution Function(EEDF) were treasured In Radio-Frequency Inductively Coupled Plasma(RFlCP) using a probe rrethocl Measurerrents were conducted in argon discharge for pressure from 10[mTorr] to 4O[mTorr] and input rf power from 100[W] to 600[W] and flow rate from 3[sccm] to 12[sccm]. Spatial distribution of electron energy distribution function were measured for discharge with same aspoct ratio (R/L=2). Electron energy distribution function strongly depended on both pressure and power. Electron energy distribution function increased with increasing flow rate. Radial distribution of the electron energy distribution function were peaked in the plasma center. Normal distribution of the electron energy distribution function were peaked in the center between quartz plate and substrate. From the results, we can find out the generation mechanism of Radio Frequency Inductively Coupled Plasma. And these results contribute the application of a simple Inductively Coupled Plasma(ICP).a(ICP).

• Journal of Astronomy and Space Sciences
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• v.39 no.3
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• pp.117-126
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• 2022

The Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) is one of the scientific instruments for the Compact Advanced Satellite 500-3 (CAS 500-3) which is planned to be launched by Korean Space Launch Vehicle in 2024. The main scientific objective of IAMMAP is to understand the complicated correlation between the equatorial electro-jet (EEJ) and the equatorial ionization anomaly (EIA) which play important roles in the dynamics of the ionospheric plasma in the dayside equator region. IAMMAP consists of an impedance probe (IP) for precise plasma measurement and magnetometers for EEJ current estimation. The designated sun-synchronous orbit along the quasi-meridional plane makes the instrument suitable for studying the EIA and EEJ. The newly-devised IP is expected to obtain the electron density of the ionosphere with unprecedented precision by measuring the upper-hybrid frequency (f_UHR) of the ionospheric plasma, which is not affected by the satellite geometry, the spacecraft potential, or contamination unlike conventional Langmuir probes. A set of temperature-tolerant precision fluxgate magnetometers, called Adaptive In-phase MAGnetometer, is employed also for studying the complicated current system in the ionosphere and magnetosphere, which is particularly related with the EEJ caused by the potential difference along the zonal direction.