• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.7
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• pp.669-674
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• 2013

A three-dimensional hydrogel scaffold has been proposed for the effective production of biomimetic intestinal villi to reduce ethical and cost problems caused by animal testing in pharmaceutical development. This study explores an experimental approach to develop a new technique based on laser machining and microdrilling processes to produce a plastic mold for the fabrication of a three-dimensional hydrogel scaffold. For process optimization, both the laser machining and the microdrilling experiments are conducted by varying the experimental conditions, and structural characterization of the mold and intestinal villi were performed using SEM (scanning electron microscope) and OM (optical microscope) images. Polycarbonate (PC) was used as a candidate material. The experimental results show that intestinal villi can be fabricated by both laser and microdrilling machining processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.2-382.2
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• 2014

We explain a method to fabricate multi-layered transparent conductive films (TCF) using graphene oxide (GO), copper powder and polyurethane (PU) solution. The flexible graphene nanosheets (GNSs) serve as nanoscale connection between conductive copper nanoparticles (CuNps) and PU nanofibers, resulting in a highly flexible TCF. To fabricate conductive films with high transmittance, polyurethane (PU) nanofibers were used for a conductive network consisting of CuNps and GNSs (CuNps-GNSs). In this experiment, copper powder and graphene oxides were mixed in deionized water with the ultrasonication for 2 h. NaBH4 solution is used as a reduction agents of CuNps and GNSs (CuNps-GNSs) under a nitrogen atmosphere in the oil bath at 100% for 24 h to mixed. The purified and dispersed CuNp-GNS were obtained in deionized water, and diluted to a 10wt.% based on the contents of GNSs. Polyurethane (PU) nanofibers on a PET substrate were formed by electrospinning method. PET slides coated with the PU nanofibers were immersed into CuNp-GNS solution for several second, rinsed briefly in deionized water, and dried to obtain self-assembled CuNp-GNS/PU films. The morphology of the multi-layered films were characterized with a field emission scanning electron microscope (FE-SEM, Hitachi S-4700) and atomic force microscope (AFM, PSIA XE-100). The electrical property was analysed by the I-V measurement system and the optical property was measured by the UV/VIS spectroscopy.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.869-879
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• 1995

TiAi intermetallic compound has been extensively studied for possible high temperature structural applications because of its high specific strength at high temperature, high creep resistance, and good oxidation resistance at elevated temperatures. In addition to its good properties, an economic manufacturing routes should be developed for this material to be used more extensively. One of the promising route in manufacturing TiAl intermetallics is the Self-propagating High-temperature Synthesis (SHS) method. Thus in this study, an attempt was made to study the mechanism of the SHS process in TiAl synthesis. The composition of the sample was Ti-(45, 50, 53)at% Al and the microstuctures of the products were analyzed using optical microscope and scanning electron microscope. When the phases formed at the main SHS reaction of whicyh combustion temperature is higher than the melting temperature of aluminum were identified as TiAl and Ti$_3$Al ; Ti$_3$Al cores surrounded by TiAl phase. In order to increase the combustion temperature, carbon was added 5 and 10at.%. When the carbon content was 10at.%, the heat of the reaction was large enough to melt the phase formed and that is consistent with the theoretical calculation results of the adiabatic temperature. The combution temperatue, which was measured by a computer data acquisition system, increased with the carbon content. The phases formed from the reaction involving the carbon added were indentified as TiAl and Ti$_2$AlC using XRD. The vickers hardness of the reaction product increased with the carbon content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Journal of Electrochemical Science and Technology
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• v.6 no.2
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• pp.65-74
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• 2015

This work examines the characterization and corrosion behaviour of laser alloyed UNSG10150 steel with three different premixed composition Zn-Sn binary powders using a 4.4 kW continuous wave (CW) Rofin Sinar Nd:YAG laser processing system. The steel alloyed samples were cut to corrosion coupons, immersed in sulphuric acid (0.5 M H₂SO₄) solution at 30℃ using electrochemical technique and investigated for its corrosion behaviour. The morphologies and microstructures of the developed coated and uncoated samples were characterized by Optic Nikon Optical microscope (OPM) and scanning electron microscope (SEM/EDS). Moreover, X-ray diffractometer (XRD) was used to identify the phases present. An enhancement of 2.7-times the hardness of the steel substrate was achieved in sample A₁ which may be attributed to the fine microstructure, dislocations and the high degree of saturation of solid solution brought by the high scanning speed. At scanning speed of 0.8 m/min, sample A₁ exhibited the highest polarization resistance R_p (1081678 Ωcm² ), lowest corrosion current density i_corr (4.81×10⁻⁸A/cm² ), and lowest corrosion rate Cr (0.0005 mm/year) in 0.5 M H₂SO₄. The polarization resistance R_p (1081678 Ωcm² ) is 67,813-times the polarization of the UNSG10150 substrate and 99.9972% reduction in the corrosion rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.659-664
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• 2016

Ash deposition of heat exchange boiler, caused mainly by accumulation of particulate matter, reduces heat transfer of the boiler system. Heat and mass transfer through porous media such as ash deposits mainly depend on the microstructure of deposited ash. Therefore, in this study, we investigated microstructural and thermal properties of the ash deposited on the boiler tube. Samples for this research were obtained from the fuel economizer tube in an industrial waste incinerator. To characterize microstructures of the ash deposit samples, scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), inductively coupled plasma optical emission spectroscopy (ICP-OES), X-ray diffraction (XRD) and BET analysis were employed. The results revealed that it had a porous structure with small particles mostly of less than a few micrometers; the contents of Ca and S were 19.3, 22.6% and 18.5, 18.7%, respectively. Also, the results showed that it consisted mainly of anhydrite ($CaSO_4$) crystals. - The thermal conductivities of the ash deposit sample obtained from the economizer tube in industrial waste incinerator were measured to be 0.63 and 0.54 W/mK at $200^{\circ}C$, which were about 100 times less than the thermal conductivity (61.32 W/mK) of the boiler tube itself, indicating that ash deposition on the boiler tube was closely related to a decrease in boiler heat transfer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.