• Journal of the Korean Society for Precision Engineering
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• v.32 no.4
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• pp.387-394
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• 2015

We analyze heat generation as well as temperature distribution induced by accelerated electron impact on a target in a closed x-ray tube. For the sake of accuracy, we use Monte carlo analysis. This method gives accurate energy deposit in a medium with additional information such as secondary and backscattered electron as well as their paths. A Tungsten coated layer is divided by small rectangular cell which accumulate energy loss of primary electron beam. The cells and their accumulated energy datum are used for the input of finite element analysis. The Maximum temperature rising and temperature distribution were analyzed by transient heat analysis. Some temperature parameters such as target size and coating thickness were varied to investigate temperature sensitivity. Temperatures were compared each other to find primary variable that affect temperature rising on the x-ray target. The results will be helpful in development highresolution x-ray tube and related industries.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.182-192
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• 2003

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.2
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• pp.57-61
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• 2006

This paper calculates and gives the analysis of mean energy in pure $SiH_4,\;Ar-SiH_4$ mixture gases ($SiH_4-0.5[%],\;5[%]$) over the range of $E/N =0.01{\sim}300[Td]$, p = 0.1, 1, 5.0 [Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $SiH_4$ and Ar, were used. The differences of the transport coefficients of electrons in $SiH_4$, mixtures of $SiH_4$ and Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• Progress in Medical Physics
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• v.16 no.3
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• pp.138-147
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• 2005

The Monte Carlo method cannot have been used for routine treatment planning because of heavy time consumption for the acceptable accuracy. Since calculation time is proportional to particle histories, we can save time by decreasing the number of histories. However, a small number of histories can cause serious uncertainties. In this study, we proposed Monte Carlo dose computation time and uncertainty reduction method using specially designed filters and adaptive denoising process. Proposed algorithm was applied to 6 MV photon and 21 MeV electron dose calculations in homogeneous and heterogeneous phantoms. Filtering time was negligible comparing to Monte Carlo simulation time. The accuracy was improved dramatically in all situations and the simulation of 1 $\%$ to 10$\%$ number of histories of benchmark in photon and electron dose calculation showed the most beneficial result. The empirical reduction of necessary histories was about a factor of ten to fifty from the result.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.16-21
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• 2008

This paper introduces a new type of Hopfield neural network using newly developed single-electron devices. In the electrical model of the Hopfield neural network, a single-electron synapse, used as a voltage(or current)-variable resistor, and two stages of single-electron inverters, used as a nonlinear activation function, are simulated with a single-electron circuit simulator using Monte-Carlo method to verily their operation.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.925-928
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• 1998

In this paper, the electron transport characteristics in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300[Td]$ and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity. diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Proceedings of the KIEE Conference
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• 2005.10a
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• pp.97-100
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• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Journal of Radiation Protection and Research
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• v.46 no.1
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• pp.8-13
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• 2021

Background: Salmonella enteritidis (SE) was the main cause of the pandemic of foodborne salmonellosis. The surface of eggs' shells can be contaminated with this bacterium; however, washing them with sodium hypochlorite solution not only reduces their flavor but also heavily impacts the environment. An alternative to this is surface sterilization using low-energy electron beam. It is known that irradiation with 1 kGy resulted in a significant 3.9 log reduction (reduction factor of 10,000) in detectable SE on the shell. FAO/IAEA/WHO indicates irradiation of any food commodity up to an overall average dose of 10 kGy presents no toxicological hazard. On the other hand, the Food and Drug Administration has deemed a dose of up to 3 kGy is allowable for eggs. However, the maximum dose permitted to be absorbed by an edible part (i.e., internal dose) is 0.1 Gy in Japan and 0.5 Gy in European Union. Materials and Methods: The electron beam (EB) depth dose distribution in the eggshell was calculated by the Monte Carlo method. The internal dose was also estimated by Monte Carlo simulation and experimentation. Results and Discussion: The EB depth dose distribution for the eggshells indicated that acceleration voltages between 80 and 200 kV were optimal for eggshell sterilization. It was also found that acceleration voltages between 80 and 150 kV were suitable for reducing the internal dose to ≤ 0.10 Gy. Conclusion: The optimum irradiative conditions for sterilizing only eggshells with an EB were between 80 and 150 kV.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.