• 한국정밀공학회지
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• 제32권4호
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• pp.387-394
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• 2015

We analyze heat generation as well as temperature distribution induced by accelerated electron impact on a target in a closed x-ray tube. For the sake of accuracy, we use Monte carlo analysis. This method gives accurate energy deposit in a medium with additional information such as secondary and backscattered electron as well as their paths. A Tungsten coated layer is divided by small rectangular cell which accumulate energy loss of primary electron beam. The cells and their accumulated energy datum are used for the input of finite element analysis. The Maximum temperature rising and temperature distribution were analyzed by transient heat analysis. Some temperature parameters such as target size and coating thickness were varied to investigate temperature sensitivity. Temperatures were compared each other to find primary variable that affect temperature rising on the x-ray target. The results will be helpful in development highresolution x-ray tube and related industries.

• 한국진공학회지
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• 제12권3호
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• pp.182-192
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• 2003

밀리미터파 대역용 고속 PHEMT 소자 제작 및 개발을 위하여 다층 리지스트 및 다원자 기판 구조에서 전자빔 리소그래피 공정을 분석할 수 있는 새로운 몬테 카를로 시뮬레이션 모델을 개발하였다. 전자빔에 의해 다층 다원자 타겟 기판 구조에 전이되는 에너지를 정확하고 효율적으로 계산하기 위하여 다층 리지스트 및 다층 다원자 기판 구조에서 시뮬레이션 가능하도록 새로이 모델링하였다. 본 논문에서 제안 개발된 모델을 사용하여 PHEMT 소자의 전자빔 리소그래피에 의한 T-게이트 형성 공정을 시뮬레이션하고 SEM측정 결과와 비교 분석하여 타당성을 검증하였다.

• 전기학회논문지P
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• 제55권2호
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• pp.57-61
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• 2006

This paper calculates and gives the analysis of mean energy in pure $SiH_4,\;Ar-SiH_4$ mixture gases ($SiH_4-0.5[%],\;5[%]$) over the range of $E/N =0.01{\sim}300[Td]$, p = 0.1, 1, 5.0 [Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $SiH_4$ and Ar, were used. The differences of the transport coefficients of electrons in $SiH_4$, mixtures of $SiH_4$ and Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.660-667
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• 1996

The electron transport characteristics in $SF_6$ gas is calculated for range of E/N values from 150 -800(Td) by the Monte Carlo simulation using a set of electron collision cross sections determined by the authors. The results suggest that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in sulphur hexaflouride at E/N:500 and 800(Td) for a case of the equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a Time of Flight method also investigated as a set of electron collision cross section for sulphur Hexaflouride.

• 한국의학물리학회지:의학물리
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• 제16권3호
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• pp.138-147
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• 2005

몬테칼로 선량계산 시 적절한 정확도를 얻기 위해서는 계산입자수를 늘려야 하고 그로 인해 계산 시간이 오래 걸리게되므로 일상적 치료계획의 선량계산 방법으로 이용되지 못했다. 본 연구에서는 몬테칼로 모의실험 시 계산입자 수를 줄여서 선량계산을 수행한 후 잡음 감소 필터를 적용하여 선량계산 결과를 개선하고자 하였다. 이를 위해 국소 최소자승 잡음 감소 필터를 제작하고 광자선 및 전자선 균질/비균질 팬텀 내 선량계산 결과에 대하여 적용하여 선택적 여과를 수행하였으며 그 유효성을 등선량 곡선 비교 및 감마시험을 통하여 검증하였다. 연구 결과 통계적 불확실도를 2$\%$ 이내로 유지하기 위해 필요한 계산입자수의 10$\%$ 이하의 계산입자 수를 이용하여 몬테칼로 선량계산 뒤 후처리한 결과가 기준계산 입자수를 이용하여 얻은 몬테칼로 선량계산 결과와 유사해질 수 있음을 확인하였다.

• 대한전자공학회논문지SD
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• 제45권6호
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• pp.16-21
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• 2008

본 논문은 새롭게 제안된 단일전자 소자(single-electron device) 및 회로를 이용한 새로운 형태의 홉필드 신경회로망(Hopfield neural network)을 소개한다. 홉필드 신경회로망의 전기적 모델 내부에서 가변저항으로 사용되는 단일전자 시냅스(single-electron synapse)와 비선형 활성함수(nonlinear activation function)로 사용되는 두 단의 단일전자 인버터(single-electron inverter)를 몬테-칼로(Monte-Carlo) 방식의 단일전자 회로 시뮬레이터로 동작을 검증한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.925-928
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• 1998

In this paper, the electron transport characteristics in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300[Td]$ and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity. diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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• pp.97-100
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• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Journal of Radiation Protection and Research
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• 제46권1호
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• pp.8-13
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• 2021

Background: Salmonella enteritidis (SE) was the main cause of the pandemic of foodborne salmonellosis. The surface of eggs' shells can be contaminated with this bacterium; however, washing them with sodium hypochlorite solution not only reduces their flavor but also heavily impacts the environment. An alternative to this is surface sterilization using low-energy electron beam. It is known that irradiation with 1 kGy resulted in a significant 3.9 log reduction (reduction factor of 10,000) in detectable SE on the shell. FAO/IAEA/WHO indicates irradiation of any food commodity up to an overall average dose of 10 kGy presents no toxicological hazard. On the other hand, the Food and Drug Administration has deemed a dose of up to 3 kGy is allowable for eggs. However, the maximum dose permitted to be absorbed by an edible part (i.e., internal dose) is 0.1 Gy in Japan and 0.5 Gy in European Union. Materials and Methods: The electron beam (EB) depth dose distribution in the eggshell was calculated by the Monte Carlo method. The internal dose was also estimated by Monte Carlo simulation and experimentation. Results and Discussion: The EB depth dose distribution for the eggshells indicated that acceleration voltages between 80 and 200 kV were optimal for eggshell sterilization. It was also found that acceleration voltages between 80 and 150 kV were suitable for reducing the internal dose to ≤ 0.10 Gy. Conclusion: The optimum irradiative conditions for sterilizing only eggshells with an EB were between 80 and 150 kV.

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.