• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.248-251
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• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.88-93
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• 1999

This paper describes the electron transport characteristics in $SiH_4$ gas calculated for the range of E/n:0.5~300(Td) and Pressure:0.5, 1, 2.5(Torr) by the Monte carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the reported results. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal and transverse diffusion coefficients, the electron ionization coefficients, characteristics energy and the electron energy distribution function. The electron energy distributions function has been analysed in $SiH_4$ at E/N: 30, 50(Td)for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Monte carlo simulation and Boltzmann equation have been compared with experimental data by ohmori ad Pollock.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.164-167
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure $CO_2$ were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of $CO_2$ molecular gas. And for propriety of two-term approximation of Boltzmann equation analysis, the calculated results compared with the electron transport coefficients measured by Nakamura.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.185-188
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• 2002

This paper describes the information for quantitative simulation of weakly ionized plasma. We should grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in $SF_6+O_2$ mixture gas calculated for range E/N values l~900[Td] at the temperature is 300[$^{\circ}K$] and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. It has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with pure $SF_6$, pure $O_2$ and mixture gas.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.169-174
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• 2001

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.169-174
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• 1996

In this paper, the electron transport characteristic in CF$_4$has been analysed over the E/N range 1~300(Td) by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The alteration of cross sections from the literature is avoided as much as possible in the analysis. The motion has been calculated to give swarm parameters for the electron drift velocity(W), diffusion coefficient(D$_{L}$), the ratio of the diffusion coefficient to the mobility(D$_{L}$/$\mu$), mean energy($\varepsilon$), the electron energy distribution function. The electron energy distribution function has been analysed in CF$_4$at E/N=50, 100 and 200(Td) for a case of the equilibrium region in the mean electron energy. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi.shi.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.564-571
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• 1996

We calculated the drift-velocities of electrons and holes of I $n_{0.53}$(A $l_{x}$G $a_{1-x}$ )$_{0.47}$As, which is used for semiconductor materials of high performance HBTs, along with the various doping concentrations and Al mole fractions as well as the electric fields by Monte Carlo experiment. Especially, for the valence bands the accuracy of hole-drift-velocity was improved in the consideration of intervalley scattering due to the inelastic scattering of acoustic phonon. From the results the empirical formulas of the low- and high field mobility of electrons and holes were extracted by using nonlinear least square fitting method. The accuracy of the formulas was proved by comparing the formula of low-field electron mobility as well as drift-velocity of I $n_{0.53}$ G $a_{0.47}$As and of low-field hole mobility of GaAs with the measured values, where the error was below 10%. For the high-field mobilities of electron and hole the results calculated by the formulas were very well matched with the MC experimental results except at the narrow field range where the electrons produced the velocity overshoot and the corresponding error was about 30%.0%. 30%.0%.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.