• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.234.1-234.1
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• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.

• 한국초전도ㆍ저온공학회논문지
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• 제18권2호
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• pp.25-29
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• 2016

High charge state electron cyclotron resonance (ECR) ion source is important on the performance of heavy ion accelerators. In this paper, a low temperature superconductor (LTS) was used to make a hexapole coil for an 18-GHz ECR ion source. Several hexapole structures, including racetrack, graded racetrack, and saddle were implemented and analyzed for the hexapole-in-solenoid ECR ion source system. Under the appropriate radial confinement field, the smaller outer radius of hexapole can be better for the solenoid design. Saddle hexapole was selected by comparing the wire length, maximum outer radius of the hexapole, the Lorentz force at the end part of the hexapole and the maximum magnetic field in the coil. Based on saddle hexapole, a new design for hexapoles, the snake hexapole, was developed in this paper. By comparative analysis of the Lorentz force at the end part of the saddle and snake hexapoles, the snake hexapole is much better in the ECR ion source system. The suggested design for the ECR ion source with the snake hexapole is presented in this paper.

• 마이크로전자및패키징학회지
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• 제8권3호
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• pp.63-67
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• 2001

최근가지 Pt박막의 식각은 Cl 계열의 가스에 의한 물리적인 스퍼터링 기구에 초점을 맞추어 연구가 진행되어왔으며 F 계열의 가스에 의한 식각 특성은 상당히 미진하였다. 본 연구에서는 ECR(electron cyclotron resonance) 플라즈마 식각 장비를 이용하여 $Cl_2$/Ar 가스와 $SF_{6}$/Ar 가스를 사용하여 Pt 박막의 식각 특성을 연구하였고, $SF_{6}$/Ar 가스의 경우 Pt 박막과 반응하여 휘발성의 식각 부산물을 형성시킬 수 있음을 확인하였다. 그리고 휘발성있는 platinum fluoride 화합물의 형성에 의해 식각률, 식각 측면형상과 표면 거칠기 특성개선도 얻을 수 있었다.

• 한국군사과학기술학회지
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• 제6권3호
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.114-119
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• 2000

Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.179-183
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• 2017

The direct growth method is simplified manufacturing process used to avoid damages and contaminants from the graphene transfer process. In this paper, graphene nano-walls (GNWs) were direct synthesized using electron cyclotron resonance (ECR) plasma by varying the $CH_4/H_2$ gas flow rate on the copper foil at low temperature (without substrate heater). Investigations were carried out of the changes in the morphology and characteristic of GNWs due to the relative intensity of hydrocarbon radical and molecule in the ECR plasma. The results of these investigations were then discussed.

• Journal of Magnetics
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• 제5권1호
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• pp.23-25
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• 2000

We have investigated the effects of Ar and$O_2$-ion milling on the exchange coupling field ($H_{ex}$) and coercive field ($H_c$) at the interfaces between substrates and NiO/NiFe films, to understand the exchange biasing mechanism. The $O_2$-ion milling was successfully performed by means of the electron cyclotron resonance (ECR) process. We found that the local roughness gradient of the NiO surface increased by $O_2$-ion milling. The ratio of $H_{ex}/H_c$ increased from 0.87 to 1.77, whereas $H_c$ decreased by almost a half as a results of the ion milling. The decrease in $H_c$could be interpreted as due to the refinement of magnetic domain size, which arose from the increase of the local roughness gradient of the NiO surface. The decrease in low $H_c$, and increase in $H_{ex}$ in NiO spin valves by ECR-ion milling are in the right direction far use in magnetoresistance (MR) heads.

• 한국재료학회지
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• 제14권3호
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• 한국진공학회지
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• 제10권1호
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• pp.119-126
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• 2001

ECR-PECVD 방법으로 ECR 플라즈마 소스 power, $CH_4/H_2$ 가스 혼합비와 유량, 증착시간 및 기판 bias 전압을 변화시켜 가면서 수소가 함유된 비정질 탄소 박막을 증착하고, 증착조건에 따라서 박막 내부에 함유되어 있는 수소함량 변화를 2.5 MeV 헬륨 이온빔을 사용하는 ERDa로 측정하였다. ERDA의 결과와 hES 및 RBS에 의한 성분분석으로부터 본 실첨에서 증착된 박막은 탄소와 수소만으로 구성 되어있음을 확인할 수 있었고, FTIR의 결과로부터 박막 증착조건에 따라서 박막 내부에 함유되어 있는 수소함량이 변화함을 알 수 있었다. 기판 bias 전압을 증가시킬수록 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상으로 수소함량이 크게 감소됨을 알 수 있었다. 그 밖의 조건에서는 박막증착 초기에는 수소보다 탄소량이 좀 더 많다가 점차적으로 수소함량이 증가되었고, 이때 박막 내부에 함유되어 있는 수소함량은 45~55% 범위 내에 있음을 확인할 수 있었다.

• 한국세라믹학회지
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• 제42권2호
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• pp.94-98
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• 2005

[ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다.