• 제목/요약/키워드: Electron Cyclotron Resonance

검색결과 125건 처리시간 0.122초

전자 싸이클로트론 공명 플라즈마 화학 증착법에 의한 실리콘 질화막 형성 및 특성 연구 (On the silicon nitride film formation and characteristic study by chemical vapor deposition method using electron cyclotron resonance plasma)

  • 김용진;김정형;송선규;장홍영
    • 한국표면공학회지
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    • 제25권6호
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    • pp.287-292
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    • 1992
  • Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

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Study on resonant electron cyclotron heating by OSXB double mode conversion at the W7-X stellarator

  • Adlparvar, S.;Miraboutalebi, S.;Kiai, S.M. Sadat;Rajaee, L.
    • Nuclear Engineering and Technology
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    • 제50권7호
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    • pp.1106-1111
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    • 2018
  • Electromagnetic waves potentially have been used to heat overdense nuclear fusion plasmas through a double mode conversion from ordinary to slow extraordinary and finally to Electron Bernstein Wave (EBW) modes, OSXB. This scheme is efficient and has not any plasma density limit of electron cyclotron resonance heating due to cut-off layer. The efficiency of conversion depends on the isotropic launching angles of the microwaves with the plasma parameters. In this article, a two-step mode conversions of OSXB power transmission efficiency affected by the fast extraordinary (FX) loses at upper hybrid frequency are studied. In addition, the kinetic (hot) dispersion relation of a overdense plasma in a full wave analysis of a OSXB in Wendelstein 7X (W7-X) stellarator plasma has been numerically simulated. The influence of plasma dependent parameters such as finite Larmor radius, electron thermal velocity and electron cyclotron frequency are represented.

Electron Cyclotron Resonance $N_2$O-플라즈마 게이트 산화막을 사용한 다결정 실리콘 박막 트랜지스터의 성능 향상 및 단채널 효과 억제 (Improved Performance and Suppressed Short-Channel Effects of Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance $N_2$O-Plasma Gate Oxide)

  • 이진우;이내인;한철희
    • 전자공학회논문지D
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    • 제35D권12호
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    • pp.68-74
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    • 1998
  • 본 논문에서는 electron cyclotron resonance (ECR) N₂O-플라즈마 산화막을 게이트 산화막으로 사용한 다결정 실리콘 박막 트랜지스터 (TFT)의 성능과 단채널 특성에 대하여 연구하였다. ECR NE₂O-플라즈마 게이트 산화막을 사용한 소자는 열산화막을 이용한 경우에 비해 우수한 성능과 억제된 단채널 효과를 나타낸다. 얇은 ECR N2O-플라즈마 산화막을 사용하여 n채널 TFT의 경우 3 ㎛, p채널 TFT의 경우 1㎛ 게이트 길이까지 문턱 전압 감소가 없는 소자를 얻었다. 이러한 특성 향상은 부드러운 계면, passivation 효과, 그리고 계면과 박막 내부에 존재하는 강한 Si ≡ N 결합 등에 기인한다.

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Actinometry를 이용한 Ta 미세 패턴 식각 특성에 관한 연구 (Study on the Etching Characteristics of Fine Ta patterns by Actinometry Method)

  • 김상훈;안진호
    • 마이크로전자및패키징학회지
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    • 제7권4호
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    • pp.43-47
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    • 2000
  • Electron cyclotron resonance플라즈마 식자 장비를 이용하여 순수 chlorine플라즈마로 Ta박 막의 식각 특성에 관해 조사하였다. Ta박막의 시각 기구를 연구하기 위해 Optical emission actinometry (OEA)를 사용하였고 OEA조사를 통하여 최적의 공정 조건을 얻었다. 이것에 기초하여 2단계 식각을 수행하였고 마이크로 로딩 철상을 성공적으로 제어하면서 0.15 $\mu\textrm{m}$ L & S 의 우수한 단면을 얻었다.

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Etching Characteristics of Fine Ta Patterns with Electron Cyclotron Resonance Chlorine Plasma

  • Kim, Sang-Hoon;Woo, Sang-Gyun;Ahn, Jin-Ho
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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    • pp.97-102
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    • 2000
  • We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

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ECR을 이용한 ${SF_6}/{O_2}$ 가스 플라즈마에 의한 ITO의 식각 특성연구 (Etch characteristics of ITO(Indium Tin Oxide)using ${SF_6}/{O_2}$-gas ECR(Electron Cyclotron Resonance) plasmas)

  • 권광호;강승열;김곤호;염근영
    • 한국전기전자재료학회논문지
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    • 제13권7호
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    • pp.563-567
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    • 2000
  • We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

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Magnetic dependence of cyclotron resonance in the electron-piezoelectric phonon interacting materials

  • Park, Jung-Il;Sug, Joung-Young
    • 한국자기공명학회논문지
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    • 제24권1호
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    • pp.16-22
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    • 2020
  • Based on quantum transport theory, we investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-dimensional Landau splitting system, in CdS and ZnO Through the analysis of the current work, we found the increasing properties of the cyclotron resonance line-profiles (CRLPs) which show the absorption power and the cyclotron resonance line-widths (CRLWs) with the magnetic field in CdS and ZnO We also found that that CRLWs, γtotal(B) of CdS < γtotal(B) of ZnO in the magnetic field region B < 15 Tesla.

저온 증착된 불소도핑 주석 산화 박막의 광학적·전기적 특성 (Optical and Electrical Properties of Fluorine-Doped Tin Oxide Prepared by Chemical Vapor Deposition at Low Temperature)

  • 박지훈;전법주
    • 한국재료학회지
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    • 제23권9호
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    • pp.517-524
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    • 2013
  • The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

전자 사이클로트론 공명 플라즈마 화학적 기상 증착 장치에서의 수소플라즈마 특성연구 (A Study on the Properties of hydrogen Plasma in the Electron Cyclotron Resonance Plasma Chemical Vapor Deposition System)

  • 김우준;구자춘;황기웅
    • 한국진공학회지
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    • 제3권3호
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    • pp.331-336
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    • 1994
  • Electron cyclotron resonance plasma chemical vapor deposition (ECRPCVD) 장치에서 공정변 수에 따른 수소플라즈마 특성을 조사하였다. 균일한 플라즈마 밀도를 얻기 위하여 전자공명층이 기판과 평행하게 형성되도록 정자장 코일을 설계하였으며 기판근처에 부가적으로 형성된 multicusp field 에의 해서 기판 근처에서의 플라즈마 균일도를 개선시킬수 있었다. 또한 절연된 공진실과 기판에의 독립적인 DC bias에 의해서 기판으로 입사하는 하전입자들이 에너지와 유량을 조잘할 수 있었다. 이러한플라즈마 특성을 갖는 ECRPCVD장치를 다양한 특성을 갖는 박막 합성에 응용할 수 있으리라 사료된다.

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