• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.164-169
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• 2002

This paper reports on design and fabrication of near field probe operating at 300~3000 MHz. Design parameters are extracted by equivalent circuit of E-field probe and simulation using S parameter is performed to predict probes performance. The probe consists of a dipole antenna with 3.25 mm length, a zero bias Schottky diode and a highly resistive transmission line. A TEM cell was used for performance evaluation.

• Journal of electromagnetic engineering and science
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• v.12 no.3
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• pp.216-222
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• 2012

This paper presents a single-pole eight-throw switch, based on an eight-way power divider, using substrate integrate waveguide(SIW) technology. Eight sectorial-lines are formed by inserting radial slot-lines on the top plate of SIW power divider. Each sectorial-line can be controlled independently with high level of isolation. The switching is accomplished by altering the capacitance of the varactor on the line, which causes different input impedances to be seen at a central probe to each sectorial line. The proposed structure works as a switching circuit and an eight-way power divider depending on the bias condition. The change in resonant frequency and input impedance are estimated by adapting a tapered transmission line model. The detailed design, fabrication, and measurement are discussed.

• Journal of electromagnetic engineering and science
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• v.13 no.4
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• pp.245-250
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• 2013

This paper presents a tunable bandpass filter based on the varactor-loaded composite right- and left-handed transmission line (CRLH-TL). The proposed filter is composed of one CRLH-TL unit cell, which corresponds to the third-order bandpass filter. The tunable bandpass filter is designed using only lumped-elements. The use of lumped elements saves space and lowers the fabrication cost. The size of the proposed tunable bandpass filter is $17mm{\times}5mm$, neglecting the feed lines and DC lines. All of the varactors are controlled by one DC bias. The center frequency of the bandpass filter can be controlled by varying the value of the varactors. The tunable range of the center frequency is from 412.5 to 670 MHz. The insertion loss is less than 3 dB, the return loss is more than 10 dB in the passband.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.166-170
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• 2012

This paper presents a tunable composite right/left-handed (CRLH) delay line for a delay line discriminator that linearizes modulated frequency sweep in a frequency modulated continuous wave (FMCW) radar transmitter. The tunable delay line consists of 8 cascaded unit cells with series varactor diodes and shunt inductors. The reverse bias voltage of the varactor diode controlled the group delay through its junction capacitance. The measured results demonstrate a group delay of 8.12 ns and an insertion loss of 4.5 dB at 250 MHz, while a control voltage can be used to adjust the group delay by approximately 15 ns. A group delay per unit cell of approximately 1 ns was obtained, which is very large when compared with previously published results. This group delay can be used effectively in FMCW radar transmitters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.6
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• pp.866-878
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• 1999

In this paper, stripline circulator including a ferrite resonator which is consisted of a circular disk and two annuli disks is designed and fabricated. Using RGF(Recursive Green Function) technique, electromagnetic field of port and input impedance is presented. The circulator characteristics are compared according to the ferrite arrangement, bias field intensity and port width. The pass-band frequency of the fabricated circulator using the designed data is from 1.55 GHz to 2.95 GHz, the reflection coefficient $S_{11}$ of input port is -30 dB, and the transmission coefficient $S_{21}$ between input port and isolation port is -28 dB at resonating point 2.38 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.807-813
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• 2008

The gate-biases of the Doherty power amplifier are controlled to improve the linearity performance. The linearity improvement mechanism of the Doherty amplifier is the harmonic cancellation of the carrier and peaking amplifier at the output power combining point. However, it is difficult to cancel the harmonic power for the broader power range because the condition for cancelling is varied by power. For the linearity improvement, we have explored the linearity characteristic of the Doherty amplifier according to the input power and gate biases of the carrier and peaking amplifier. To extend the region of harmonic power cancellation, we have injected the proper gate bias to the carrier and peaking amplifier according to the input power levels. To validate the linearity improvement, the Doherty amplifier is designed using Eudyna 10-W PEP GaN HEMT EGN010MKs at 2.345 GHz and optimized to achieve a high linearity and efficiency at an average output power of 33 dBm, backed off about 10 dB from the $P_{1dB}$. In the experiments, the envelope tracking Doherty amplifier delivers a significantly improved adjacent channel leakage ratio performance of -37.4 dBc, which is an enhancement of about 2.8 dB, maintaining the high PAE of about 26 % for the WCDMA 1-FA signal at an average output power of 33 dBm. For the 802.16-2004 signal, the amplifier is also improved by about 2 dB, -35 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.883-891
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• 2013

In wireless smart phone charging scenario, the transmitter pad is larger than the size of the receiver pad. Thus, it is important to supply a constant power to the receiver regardless of its location. In this paper, we propose a new method to regulate the receiver's power by adjusting a drain bias of class E power amplifier. The proposed LF-band wireless power transfer system is as follows: a buck converter power supply which is controlled by a pulse width modulation(PWM) IC TL494, a class E amplifier using a low cost IRF510 power MOSFET, a transmitter coil whose dimension is $16cm{\times}18cm$, a receiver coil whose dimension is $6cm{\times}8cm$, and a full bridge rectifier using Schottky diodes. A measured performance show a maximum output power of 4 W and system efficiency of 67 % if we fix the bias voltage. If we adjust the bias voltage, the received power can be maintained at a constant power of 2 W regardless of receiver pad location.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1081-1090
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• 2013

In this paper, a C-band 10 W power amplifier with internally matched input and output matching circuit is designed and fabricated. The used power transistor for the power amplifier is GaAs pHEMT bare-chip. The wire bonding analysis considering the size of the capacitor and the position of transistor pad improves the accurate design. The matching circuit design with the package effect using EM simulation is performed. To reduce the unsymmetry of IMD3 in 2-tone measurement due to the memory effect, the bias circuit minimizing the memory effect is proposed and employed. The measured $P_{1dB}$, power gain, and power added efficiency are 39.8~40.4 dBm, 9.7~10.4 dB, and 33.4~38.0 %, respectively. Adopting the proposed bias circuit, the difference between the upper and lower IMD3 is less than 0.76 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.1
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• pp.46-52
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• 2010

A compact circular microstrip patch antenna with a switchable circular polarization(CP) is proposed at 2.4 GHz. An unequal cross-shaped slot on a ground plane is utilized as a perturbation. By switching pin diodes mounted on the slot, the CP sense of each antenna can be simply switched from left-handed(LH) CP to right-handed(RH) CP vice versa. Since the perturbation can be made on the ground plane and no bias circuit is required on the patch side, the bias circuit has not effect on the main beam radiation. From the experimental results, the impedance bandwidth and CP bandwidth of the proposed antenna have shown up to 150 MHz and 35 MHz, respectively. The peak gain of the proposed antenna is 1.7 dBi for both CP senses.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.80-83
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• 2017

In this paper, the X-band reconfigurable frequency selective surface having flexible geometry was proposed. The proposed RFSS is composed of patterns of cross-shaped loop with inductive stub, which can control the frequency response for C-Band and X-band by ON/OFF state of PIN diode. To minimize the parasitic effect and to obtain the high level of isolation between the unit cell of FSS and the bias circuit, we designed the grid type bias line on bottom layer through via hole. The measured transmission characteristics show good agreement with the simulation results and good stability of frequency response for different incident angles and curvatures of surface.