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http://dx.doi.org/10.5515/KJKIEES.2013.24.11.1081

C-Band Internally Matched GaAs Power Amplifier with Minimized Memory Effect  

Choi, Woon-Sung (Department of Electronic Engineering, KwangWoon University)
Lee, Kyung-Hak (Silicon R&D)
Eo, Yun-Seong (Department of Electronic Engineering, KwangWoon University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.24, no.11, 2013 , pp. 1081-1090 More about this Journal
Abstract
In this paper, a C-band 10 W power amplifier with internally matched input and output matching circuit is designed and fabricated. The used power transistor for the power amplifier is GaAs pHEMT bare-chip. The wire bonding analysis considering the size of the capacitor and the position of transistor pad improves the accurate design. The matching circuit design with the package effect using EM simulation is performed. To reduce the unsymmetry of IMD3 in 2-tone measurement due to the memory effect, the bias circuit minimizing the memory effect is proposed and employed. The measured $P_{1dB}$, power gain, and power added efficiency are 39.8~40.4 dBm, 9.7~10.4 dB, and 33.4~38.0 %, respectively. Adopting the proposed bias circuit, the difference between the upper and lower IMD3 is less than 0.76 dB.
Keywords
IMFET; Memory Effect; C-Band Power Amplifier; GaAs pHEMT;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
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