• 제목/요약/키워드: Electroless plate

검색결과 27건 처리시간 0.024초

무전해 Ni-P UBM과 95.5Sn-4.0Ag-0.5Cu 솔더와의 계면반응 및 신뢰성에 대한 연구 (A study on the interfacial reactions between electroless Ni-P UBM and 95.5Sn-4.0Ag-0.5Cu solder bump)

  • 전영두;백경욱
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.85-91
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    • 2002
  • Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

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프리스탠딩 저항형 가스 센서용 산화구리 무전해 도금 탄소스펀지 제조 및 일산화질소 감지 (Fabrication of Copper(II) Oxide Plated Carbon Sponge for Free-standing Resistive Type Gas Sensor and Its Application to Nitric Oxide Detection)

  • 김석진;하성민;명성재;이영석
    • 공업화학
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    • 제33권6호
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    • pp.630-635
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    • 2022
  • 멜라민 스펀지를 열처리하여 제조된 질소함유 탄소 스펀지에 산화구리(CuO)를 무전해 도금하여 기판없이 작동하는 일산화질소(NO) 가스 센서를 제조하였다. 탄소 스펀지 표면의 CuO 함량은 도금 시간이 증가함에 따라 증가하였으나, NO 가스 흡착을 유도한다고 알려져 있는 질소의 함량은 CuO 표면 함량이 증가함에 따라 감소하였다. 미처리 탄소스펀지는 NO 가스에 대하여 18 min에 최대 저항 변화(5.0%)를 나타내었다. 반면에, CuO가 도금된 샘플(CuO30s-CS)은 8 min만에 최대 18.3%의 저항변화를 보였다. 이러한 NO 가스 감지 능력 향상은 CuO로 인하여 탄소 스펀지의 정공 캐리어 수 증가 및 전자전달 촉진에 기인하는 것으로 판단된다. 그러나, 60 s 동안 CuO 무전해 도금된 탄소 스펀지의 NO가스 감지 저항은 1.9%로 오히려 감소하였다. 이는 탄소 스펀지 표면에 CuO로 완전히 도금되어 NO 가스 흡착 능력이 떨어져 저항변화가 감소한 것으로 판단된다. 따라서, CuO가 도금된 탄소 스펀지는 빠르고 우수한 저항변화 특성을 가지고 있어 유용한 NO 가스 센서로 사용할 수 있으나, CuO가 탄소 스펀지 표면을 완전히 도금해서는 안 된다.

이온성 고분자-금속 복합물 액추에이터의 제작 및 이동형 액추에이터에의 응용 (Fabrication of Ionic Polymer-Metal Composite Actuator and Application to Moving Mechanism)

  • 이승기;이상조
    • 센서학회지
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    • 제12권3호
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    • pp.112-120
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    • 2003
  • 이온 전도성 고분자와 금속의 복합물을 제작하고 이를 액추에이터로 이용하였다. 이온 전도성 고분자의 양면에 백금을 무전해 도금하여 전극으로 사용하고 이 두 개의 전극에 교류전압을 인가하면 구부러지는 형태의 빔 형 액추에이터를 제작할 수 있다. 본 논문에서는 이러한 액추에이터의 제작 과정을 상술하고 이를 이용하여 이동형 액추에이터를 제작하였다. 이동형 액추에이터는 전선이 없는 형태로 하단의 전극 레일을 이용하여 전압을 인가하며 진동하는 빔 형 액추에이터의 충격을 흡수하며 앞으로 진행한다. 제작한 이동형 액추에이터는 최대 약 24cm/min 정도의 속도를 갖는 것으로 측정되었다.

무전해 코발트 코팅된 금속계 SOFC분리판의 제조 및 특성 평가 (Synthesis and Characterization of the Co-electrolessly Deposited Metallic Interconnect for Solid Oxide Fuel Cell)

  • 한원규;주정운;황길호;서현석;신정철;전재호;강성군
    • 한국재료학회지
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    • 제20권7호
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    • pp.356-363
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    • 2010
  • For this paper, we investigated the area specific resistance (ASR) of commercially available ferritic stainless steels with different chemical compositions for use as solid oxide fuel cells (SOFC) interconnect. After 430h of oxidation, the STS446M alloy demonstrated excellent oxidation resistance and low ASR, of approximately 40 $m{\Omega}cm^2$, of the thermally grown oxide scale, compared to those of other stainless steels. The reason for the low ASR is that the contact resistance between the Pt paste and the oxide scale is reduced due to the plate-like shape of the $Cr_2O_3$(s). However, the acceptable ASR level is considered to be below 100 $m{\Omega}cm^2$ after 40,000 h of use. To further improve the electrical conductivity of the thermally grown oxide on stainless steels, the Co layer was deposited on the stainless steel by means of an electroless deposition method; it was then thermally oxidized to obtain the $Co_3O_4$ layer, which is a highly conductive layer. With the increase of the Co coating thickness, the ASR value decreased. For Co deposited STS444 with 2 ${\mu}m$hickness, the measured ASR at $800^{\circ}$ after 300 h oxidation is around 10 $m{\Omega}cm^2$, which is lower than that of the STS446M, which alloy has a lower ASR value than that of the non-coated STS. The reason for this improved high temperature conductivity seems to be that the Mn is efficiently diffused into the coating layer, which diffusion formed the highly conductive (Mn,Co)$_3O_4$ spinel phases and the thickness of the $Cr_2O_3$(S), which is the rate controlling layer of the electrical conductivity in the SOFC environment and is very thin

유무연 용융도금 리본에 따른 결정질 실리콘 태양전지 모듈 열화거동 (Degradation Behavior of Eutectic and Pb-free Solder Plated Ribbon in Crystalline Silicon Photovoltaic Module)

  • 김주희;김아영;박노창;하정원;이상권;홍원식
    • Journal of Welding and Joining
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    • 제32권6호
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    • pp.75-81
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    • 2014
  • Usage of heavy metal element (Pb, Hg and Cd etc.) in electronic devices have been restricted due to the environmental banning of the European Union, such as WEEE and RoHS. Therefore, it is needed to develop the Pb-free solder plated ribbon in photovoltaic (PV) module. This study described that degradation characteristics of PV module under damp heat (DH, $85^{\circ}C$ and 85% R.H.) condition test for 1,000 h. Solar cell ribbons were utilized to hot dipping plate with Pb-free solder alloys. Two types of Pb-free solder plated ribbons, Sn-3.0Ag-0.5Cu (SAC305) and Sn-48Bi-2Ag, and an electroless Sn-40Pb solder hot dipping plated ribbon as a reference sample were prepared to evaluate degradation characteristics. To detect the degradation of PV module with the eutectic and Pb-free solder plated ribbons, I-V curve, electro-luminescence (EL) and cross-sectional SEM analysis were carried out. DH test results show that the reason of maximum power (Pm) drop was mainly due to the decrease fill factor (FF). It was attributed to the crack or oxidation of interface between the cell and the ribbon. Among PV modules with the eutectic and Pb-free solder plated ribbon, the PV module with SAC305 ribbon relatively showed higher stability after DH test than the case of PV module with Sn-40Pb and Sn-48Bi-2Ag solder plated ribbons.

A Capillary Electrochromatographic Microchip Packed with Self-Assembly Colloidal Carboxylic Silica Beads

  • Jeon, In-Sun;Kim, Shin-Seon;Park, Jong-Man
    • Bulletin of the Korean Chemical Society
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    • 제33권4호
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    • pp.1135-1140
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    • 2012
  • An electrochromatographic microchip with carboxyl-group-derivatized mono-disperse silica packing was prepared from the corresponding colloidal silica solution by utilizing capillary action and self-assembly behavior. The silica beads in water were primed by the capillary action toward the ends of cross-patterned microchannel on a cyclic olefinic copolymer (COC) substrate. Slow evaporation of water at the front of packing promoted the self-assembled packing of the beads. After thermally binding a cover plate on the chip substrate, reservoirs for sample solutions were fabricated at the ends of the microchannel. The packing at the entrances of the microchannel was silver coated to fix utilizing an electroless silver-plating technique to prevent the erosion of the packed structure caused by the sudden switching of a high voltage DC power source. The electrochromatographic behavior of the microchip was explored and compared to that of the microchip with bare silica packing in basic borate buffer. Electrophoretic migration of Rhodamine B was dominant in the microchip with the carboxyl-derivatized silica packing that resulted in a migration approximated twice as fast, while the reversible adsorption was dominant in the bare silica-packed microchip. Not only the faster migration rates of the negatively charged FITC-derivatives of amino acids but also the different migration due to the charge interaction at the packing surface were observed. The electrochromatographic characteristics were studied in detail and compared with those of the bare silica packed microchip in terms of the packing material, the separation potential, pH of the running buffer, and also the separation channel length.

도금된 폴리카보네이트 분리판을 이용한 공기 호흡형 고분자 전해질막 연료전지에 관한 연구 (Study of Air-Breathing Polymer Electrolyte Membrane Fuel Cell Using Metal-Coated Polycarbonate as a Material for Bipolar Plates)

  • 박태현;이윤호;장익황;지상훈;백준열;차석원
    • 대한기계학회논문집B
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    • 제37권2호
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    • pp.155-161
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    • 2013
  • 본 연구에서는 도금된 폴리카보네이트를 사용하여 공기호흡형 고분자 전해질막 연료전지의 분리판을 제작하였다. 도금층은 구리 $40{\mu}m$, 니켈 $10{\mu}m$, 금 $0.3{\mu}m$ 로 구성되었으며, 구리는 전기 전도층, 니켈은 구리와 금의 결합, 금은 도금층의 부식을 방지하기 위해 사용되었다. 본 분리판을 사용하여 성능을 평가한 결과 $120mW/cm^2$ 의 전력 밀도를 보였으며 이는 동일한 조건에서 그라파이트 분리판을 사용했을 때의 전력밀도와 거의 차이가 나지 않았다. 또한 평판형 12 층 스택의 공기호흡형 연료전지를 구성한 결과 각 전지당 $132.7mW/cm^2$ 의 성능을 보였으며 이를 12 시간 운전해본 결과 안정적인 성능을 보여 공기호흡형 고분자 전해질 연료전지의 분리판으로 적합함을 확인하였다.