• 마이크로전자및패키징학회지
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• 제8권3호
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• pp.55-62
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• 2001

최근 전자 제품에서 사용이 폭발적으로 증가하고 있는 BGA, CSP 등의 면실장형 부품의 폭 넓은 채용에 따라서 베어 보드에서 solderability에 영향을 미치는 평탄한 표면 처리에 대한 요구는 갈수록 증가되고 있다. 무전해 Ni/Au도금 처리는 이러한 요구에 대한 해결책을 가지고 있어서 많은 전자제품에서 평탄한 표면 처리를 요구하는 응용 분야에 폭 넓게 사용되고 있다. 그러나, 무전해 Ni/Au 도금은 평탄한 표면 처리를 가지는 반면에 도금 공정에서 Ni의 산화와 적정한 P성분과 같은 몇 가지 해결요소를 가지고 있는 실정이다. 본 연구에서는 무전해 Ni/Au 도금 처리를 한 보드에서 BGA의 solderability에 미치는 영향을 사전 조사한 후, NiP 산화 특성과 보드의 휨과 간은 주요 인자를 선정하였다. 이를 위하여 먼저, 다양한 도금 조건을 가지는 테스트 보드를 제작한 후, 도금 공정에서 P성불을 감소시켜 NiP 산화 특성을 개선하였다. 또한 다양한 내층 구조와 휨 분석을 통해 내층 구조를 개선하여 보드의 휨을 최소화하였다. Solderability의 평가를 위해서 최적의 조건으로 제작된 보드에 BGA를 실장하여 보드의 휨과 도금 특성을 분석하였다. BGA의 접합부 조직은 주사 전자현미경(SEM: Scanning Electronic Microscope)과 광학 현미경(Optical Microscope)으로 관찰하였으며, 성분 분석은 EDS(Energy Dispersive Spectroscopy)를 활용하였다. 또한 기계적인 특성은 ball shear tester를 사용해서 파괴 강도와 모드를 분석하였다.

• 자원리싸이클링
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• 제21권2호
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• pp.41-46
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• 2012

전해채취법을 이용하여 무전해 니켈 도금폐액으로부터 니켈을 회수하기 위한 실험을 수행하였다. 이를 위해 우선 가성소다를 첨가하는 방법으로 무전해 니켈 도금폐액중의 니켈을 수산화물 형태로 침전분리하였다. 또한, 니켈 수산화물을 황산 용액으로 용해시킨 니켈 수용액을 대상으로 전기분해를 실시하였다. 실험결과, 가성소다를 첨가하여 pH 10 이상으로 조절하면 99% 이상의 Ni을 수산화물로 침전시킬 수 있는 것으로 나타났다. 한편, 니켈 수용액으로부터 전해채취를 통한 Ni의 석출시 전류밀도가 증가할수록 전류효율은 감소하는 것으로 나타났다.

• 한국표면공학회지
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• 제24권4호
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Composites Research
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• 제28권6호
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• pp.361-365
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• 2015

The influence of MWCNTs on fracture toughness properties of MWCNTs/Nickel-Pitch Fibers/epoxy composites (MWCNTs/Ni-PFs/epoxy) was investigated according to MWCNTs content. Nickel-Pitch-based carbon fibers (Ni-PFs) were prepared by electroless nickel-plating. The surface properties of Ni-PFs were determined by scanning electron microscopy (SEM) and X-ray photoelectron spectrometry (XPS). The fracture toughness of MWCNTs/Ni-PFs/epoxy was assessed by critical stress intensity factor ($K_{IC}$) and critical strain energy release rate ($G_{IC}$). From the results, it was found that the fracture toughness properties of MWCNTs/Ni-PFs/epoxy were enhanced with increasing MWCNTs content, whereas the value decreased above 5 wt.%. MWCNTs content. This was probably considered that the MWCNTs entangled with each other in epoxy due to an excess of MWCNTs.

• 한국표면공학회지
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• 제27권2호
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• pp.109-117
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• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.350-355
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• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국분말재료학회지
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• 제14권2호
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• pp.108-115
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• 2007

Cu-Ni-P alloy nano powders were fabricated by the electrical explosion of electroless Ni plated Cu wires. The effect of applied voltage on the explosion was examined by applying pulse voltage of 6 and 28 kV, The estimated overheating factor, K, were 1.3 for 6 kV and 2.2 for 28 kV. The powders produced with pulse voltage of 6 kV were composed of Cu-rich solid solution, Ni-rich solid solution, and $Ni_3P$ phase. While, those produced with 28 kV were complete Cu-Ni-P solid solution and small amount of $Ni_3P$ phase. The initial P content of 6.5 at.% was reduced to 2-3 at.% during explosion due to its high vapour pressure.

• 한국재료학회지
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• 제15권12호
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• pp.765-772
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• 2005

PAS(Plasma Activated Sintering) process was tried to apply for the fabrication of BMG(Bulk Metallic Glasses) of $Ni_{57}Zr_{20}Ti_{18}Si_5}\;and\;Ni_{57}Zr_{20}Ti_{18}Si_3Sn_2$ from the as-atomized amorphous powder. Compressive strength for the BMG(bulk Metallic Glasses) of $Ni_{57}Zr_{20}Ti_{18}Si_5$ were lower than those of BMG rods produced by warm extrusion ,or copper mold casting method. Microstructural examination by optical microcope, SEM ana EDS showed that oxidation had occurred during PASintering. In order to prevent the powder from the oxidation during PASintering, Ni coating for $Ni_{57}Zr_{20}Ti_{18}Si_5$ amorphous powder by electroless-plating method was performed. Microstructural examination for Ni coated layers after PASintering indicated that the Ni coating had been so effective to prevent powder from oxidation during PASintering. Sintering behaviors of $Ni_{57}Zr_{20}Ti_{18}Si_3Sn_2$ represent the same as those of $Ni_{57}Zr_{20}Ti_{18}Si_5$.

• 한국표면공학회지
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• 제50권3호
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• pp.170-176
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• 2017

EPIG (Electroless Pd/immersion Au) process was studied to replace ENIG (electroless Ni/immersion Au) and ENEPIG (electroless Ni/electroless Pd/immersion Au) processes for bump surface treatment used in high reliable flip chip packages. The palladium and gold layers formed by EPIG process were uniform with thickness of 125 nm and 34.5 nm, respectively. EPAG (Electroless Pd/autocatalytic Au) also produced even layers of palladium and gold with the thickness of 115 nm and 100 nm. TEM results exhibited that the gold layer in EPIG surface had crystalline structure while the palladium layer was amorphous one. After annealing at 250 nm, XPS analysis indicated that the palladium layer with thickness more than 22~33 nm could act as a diffusion barrier of copper interconnects. As a result of comparing the chip shear strength obtained from ENIG and EPIG surfaces, it was confirmed that the bonding strength was similar each other as 12.337 kg and 12.330 kg, respectively.

• 한국재료학회지
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• 제23권11호
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.