• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.232-235
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• 2002

Recently developed liquid silicone rubber (LSR) can be cured by platinum catalyzed additional hydrosilylation mechanism and has the advantage of no byproduct compared to traditional millable peroxide curing silicone rubber. We investigated the characteristics of dielectric breakdown of silicone rubber and adhesion properties between semi-conductive LSR and insulating LSR for high voltage application of pre-molded joint (PMJ). In order to understand the dielectric breakdown characteristics, we used the sheet samples and the paired type rogowski insert electrode system. The breakdown strength and adhesion strength of LSR (E-3) were superior to those of several silicone rubbers. Adhesion strength could be improved by curing at high temperature without post-curing process or enhanced by post-curing process. When LSR (E-3) was cured at $(150^{\circ}C{\times}10min$ semi-conductive )${\times}$ ($175^{\circ}C{\times}10min$ insulation), it showed the high breakdown strength with low standard deviation, and good adhesion strength. In this results, we could apply this process to the fabrication of PMJ without post-curing.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.262-267
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• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.426-434
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• 2020

The performance characteristics of a lead acid battery are investigated with the content of Sodium Perborate Tetrahydrate (SPT, NaBO₃·4H₂O) in a positive plate active material. SPT, which reacts with water to form hydrogen peroxide, is applied as an additive in the positive plate active material to increase adhesion between the substrate (positive plate) and the active material; this phenomenon is caused by a chemical reaction on the surface of substrate. A positive plate with the increasing content of SPT is prepared to compare its properties. It is confirmed that the oxide layer increases at the interface between the substrate and the active material with increasing content of SPT; this is proven to be an oxide layer through EDS analysis. Battery performance is confirmed: when SPT content is 2.0 wt%, the charging acceptance and high rate discharge properties are improved. In addition, the lifetime performance according to the Standard of Battery Association of Japan (SBA) S0101 test is improved with increasing content of SPT.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.187-190
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• 2012

Contamination of ion from cathode air on the membrane and electrode assembly (MEA) is the serious degradation source in proton exchange membrane fuel cells (PEMFC). In this study, concentration of ions in air at industry region, street and seaside were measured. There were comparably high concentration of $Na^+$, $K^+$, $Ca^{2+}$ and $Fe^{3+}$ in this regions. This paper shows the effects of MEA contamination by these ions generated from humidification water. After 170 hours of fuel cell operation using city water as humidification water, the performance of unit cell decrease to 11% of initial performance. The electrolyte membrane easily absorbed foreign contaminant cations due to the stronger affinity of foreign cations with the sulfonic acid group compared to $H^+$. The contaminant ions existing in the interface between the platinum catalyst and ionomer layer turn out to be the most serious factor to decrease cell performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2009.06a
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• pp.467-470
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• 2009

A novel 8 V DC power source with an external series-parallel connection of 50 Dye-Sensitized Solar Cells(DSSCs) has been proposed. One DSC has the optimized length to width ratio of $5.2{\times}2.6$ cm and an active area 8 $cm^2$($4.62{\times}1.73$ cm) which attained a conversion efficiency of 4.2%. From the electrochemical impedance spectroscopic analysis, it was found that the resistance elements related to the Pt electrode and electrolyte interface behave like that of diode and the series resistance corresponds to the sum of the other resistance elements. In addition, the TEMoo mode pulsed Nd:YAG laser beam is used to improve the incident photon to current efficiency(IPCE) of DSSC. From this result, this novel 8V-0.38A DC power source shows stable performance with an energy conversion efficiency of about 4.5% under 1 sun illumination(AM 1.5, Pin of 100 $mW/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.93-93
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• 2010

Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.