• Korean Membrane Journal
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• v.10 no.1
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• pp.46-52
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• 2008

Optimization of ionomer solution was conducted in order to improve the performance of MEAs in PEMPC. The interface between membrane and electrodes in MEAs is crucial region determining fuel cell performance as well as ORR reaction at cathode. Through the modification of Nafion ionomer content at the interface between membrane and electrodes, an optimal content was obtained with Nafion 115 membranes. Two times higher current density was obtained with the outer Nafion sprayed MEA compared with the non-sprayed one. In addition, the symmetrical impedance spectroscopy mode (SM) exhibited that the resistances of membrane area, proton hydration, and charge transfer decreased as the outer Nafion is sprayed. From the polarization curves and SM, the highest current density and the lowest resistance was obtained at the outer ionomer content of $0.15\;mg\;cm^{-2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.15-18
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• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.4
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• pp.252-256
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• 2003

In this paper we describe the status of a silicon-based microelectrode for neural recording and an advanced neural interface. We have developed a silicon neural probe, using a combination of plasma and wet etching techniques. This process enables the probe thickness to be controlled precisely. To enhance the CMOS compatibility in the fabrication process, we investigated the feasibility of the site material of the doped polycrystalline silicon with small grains of around 50 nm in size. This silicon electrode demonstrated a favorable performance with respect to impedance spectra, surface topography and acute neural recording. These results showed that the silicon neural probe can be used as an advanced microelectrode for neurological applications.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.94-100
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• 2003

The interface between low carbon steel and blended cement pastes containing slag was investigated using impedance spectroscopy. In addition, the pastes were characterized by several analytical methods (XRD, EDX, electrode potential, pH and ICP). The electrical behavior of the interface in the blended slag systems is correlated to its corresponding pore solution chemistry and the products present in the interface. Passivation occurred at the paste/steel interfaces, in cement pastes up to containing from 0 to 75% slag content. 100% slag paste induced corrosion of the low carbon steel, which could be explained by the influence of sulfur on the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.775-778
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• 2000

In this paper, the life-time of macro interface between Epoxy/EPDM which consists in underground power cable joints is predicted. The electrode system of specimen is designed by FEM(finite elements method). The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law, and the long breakdown life time can be evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.192.2-192.2
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• 2013

Crystalline order and surface stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin films on organic surface were investigated using grazing incidence wide angle x-ray scattering and x-ray reflectivity measurements. In the initial growth regime (less than 20 nm), HATCN molecules were stacked to low crystalline order with substantial amorphous phase. Meanwhile, a thicker film with 50 nm thickness showed high crystalline order of hexagonal phase with three different orientational domains. The domain distribution was quantitatively obtained as a function of tilted angle. By an organic-inorganic interface formation of IZO/HATCN thin film from an indium zinc oxide (IZO) electrode deposition, the surface stability of HATCN film was investigated and the sharp interface was confirmed by the x-ray reflectivity measurement.

• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1079-1084
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• 2002

Because complex insulation method is used in EHV(extra high voltage) insulation systems, macro Interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. Interface between toughened epoxy and silicone rubber was selected as a interface in EHV insulation systems and tested AC interfacial breakdown properties with variation of many conditions to influence on electrical Properties, such as interfacial pressure, roughness and oil. Specimen was designed to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the direction of the interface between epoxy and silicone rubber by using FEM(finite elements method). It could control the interfacial pressure, roughness and viscosity of oil. From the result of this study, it was shown that the interfacial breakdown voltage is improved by increasing interfacial Pressure and oil. In particular, the dielectric strength saturates at certain interracial Pressure level. The decreasing ratio of the interfacial breakdown voltage in non-oiled specimen was increased by the temperature rising, while oiled specimen was not affected by temperature.

• Proceedings of the IEEK Conference
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• summer
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation