• 제목/요약/키워드: Electrode geometry

검색결과 144건 처리시간 0.022초

고분자 절연재료에서 전기트리 열화 및 절연파괴 현상 (Electrical Treeing Deterioration and Dielectric Breakdown Phenomena in Polymeric Insulator)

  • 조영신;김상욱
    • 한국재료학회지
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    • 제9권4호
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    • pp.398-403
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    • 1999
  • 폴리에틸렌과 에폭시 수지계 고분자 정연재료에서 발생하는 전기트리 열화 및 절연파괴 현상에 대해 연구하였다. 침-평판 전극구조를 갖는 블럭상 시편에 전기적 응력을 가하고 침 선단에서 발생하는 전기트리를 관찰하였다. 저밀도 폴리에틸렌에서 발생하는 전기트리 형상은 밀도가 매우 높은 부시상이었으며, 가교 풀려에틸렌에서는 가지형 전기트리가 관찰되었다. 에폭시 수지 에서는 첨가제 SN의 함량과 온도가 증가함에 따라 절연파괴 강도는 감소하였으며 전기트리는 더욱 복잡해졌다. 가교밀도가 높아 딱딱한 DGEBA/MDA 에폭시 수지계에서는 전도성 트리 경로 주위에 일련의 부채꼴 크랙이 관찰되었다.

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전극함몰형 태양전지의 제조를 위한 레이저 scribing (Laser scribing for buried contact solar cell processing)

  • 조은철;조영현;이수홍
    • E2M - 전기 전자와 첨단 소재
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    • 제9권6호
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    • pp.593-599
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    • 1996
  • Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.

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유동 가이드가 열파퍼 플라즈마 챔버의 아크현상 이력에 미치는 영향 (Effects of a Flow Guide on the Arcing History in a Thermal Puffer Plasma Chamber)

  • 이종철;김윤제
    • 대한기계학회논문집B
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    • 제31권10호
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    • pp.832-839
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    • 2007
  • The geometry and dimensions of an expansion chamber are decisive factors in thermal puffer plasma chamber designs. Because they together dominate the temperature and speed at which the cooling gas from the chamber flows back through a flow channel to the arcing zone for the successful interruption of fault currents. In this study, we calculated the flow and mass transfer driven by arc plasma, and investigated the effects of a flow guide installed inside a thermal puffer plasma chamber. It is found that the existing cold gas of the chamber mixes with hot gases entrained from the arcing zone and is subjected to compression due to pressure build-up in the chamber. The pressure build-up with the flow guide is larger than that without due to a vortex which rotates clockwise around the chamber center. By the reverse pressure gradient, the mixing gas of the chamber flows back out for cooling down the residual plasma near current zero. In the case with the flow guide, the temperature just before current zero is lower than that without, and the Cu concentration with high electrical conductivity is also less than that without the flow guide.

유기물 광전소자 제작을 위한 박스 캐소드 스퍼터 기술 (Box Cathode Sputtering Technologies for Organic Optoelectronics)

  • 김한기;이규성;김광일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.53-54
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    • 2005
  • We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

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가솔린 직접 분사식 엔진의 운전특성에 관한 연구 (Engine Operation Characteristics of a Gasoline Direct Injection Engine)

  • 조한승;박태용;박성진;조남효
    • 한국자동차공학회논문집
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    • 제8권5호
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    • pp.54-66
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    • 2000
  • A gasoline direct injection single cylinder engine has been developed to study operational characteristics for highly stratified conditions. Parameters related to design and experiment were also studied to understand the characteristics of combustion and emissions at some part load conditions. It was found that optimal timings between the end of fuel injection and spark ignition were existed for stable combustion under the stratified modes, In a low engine speed, fuel spray behavior around piston bowl was important for stable combustion. The in-cylinder air motion affecting fuel spray behavior was found to be a dominant factor at higher engine speed as fuel injection timing had to be advanced to secure enough time for fuel evaporation and mixing with surrounding air. As swirl ratio increased, spark timing could be advanced for stable combustion and a higher compression ratio could be used for improved fuel consumption and stable combustion at the stratified mode. It was also observed that electrode geometry and piston bowl shape played an important role for combustion and emission characteristics and some results were shown for comparison.

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Polymer (Polydimethylsiloxane (pdms)) Microchip Plasma with Electrothermal Vaporization for the Determination of Metal Ions in Aqueous Solution

  • Ryu, Won-Kyung;Kim, Dong-Hoon;Lim, H.B.;Houk, R.S.
    • Bulletin of the Korean Chemical Society
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    • 제28권4호
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    • pp.553-556
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    • 2007
  • We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

Pentacene Thin Film Transistors with Various Polymer Gate Insulators

  • Kim, Jae-Kyoung;Kim, Jung-Min;Yoon, Tae-Sik;Lee, Hyun-Ho;Jeon, D.;Kim, Yong-Sang
    • Journal of Electrical Engineering and Technology
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    • 제4권1호
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    • pp.118-122
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    • 2009
  • Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

전기 집진기의 집진 효율 향상에 관한 연구 (The Improvement of Collection Efficiency of Electrostatic Precipitator)

  • 안국찬;김봉환;이광석
    • 한국안전학회지
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    • 제17권4호
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    • pp.25-30
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    • 2002
  • This paper demonstrates the effects of dust electrical resistivity on electrostatic precipitability. The effects of gas temperature, velocity and humidity on the collection efficency were considered by used of coal fly ashes from fluidized bed combustion boiler. The experiments for collection efficiency were carried out in the pilot plant. The ashes which have non-spherical geometry and high electrical resistivity were used. Electrical resistivity is an important property for the collection efficiency in the electrostatic precipitators. Fly ash resistivity as a function of temperature up $350{\circ}C$ and water concentration(up to 15%) has been experimentally investigated using the resistivity test equipment consisted of the movable electrode, dust cup, and furnace. As the resistivity of fly ash in the operating temperature($150{\circ}C$) of an electrostatic precipitator was measured higher than $1010{\Omega}{\cdot}$cm, flue gas conditioning in the electrostatic precipitator to reduce the resistivity of fly ash is required.

SF(sub)6-$N_2$혼합가스중에 뇌임펄스전압에 의해 형성된 불평등전장에서의 전구방전현상 (Predischarge Phenomena in Nonuniform Fields Caused by Lightning Impulse Voltages in SF(sub)6-$N_2$Mixtures)

  • 이복희;이경옥;백승권
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권6호
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    • pp.288-295
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    • 2001
  • Predischarges in nonuniform electric field stressed by lightning impulse voltagesin SF(sub)6-$N_2$mixtures are initiated by streamer coronas. Due to field ehnancement at a protrusion point of electrodes new ionization processes occur and a precursor, which leads to a first leader, is created. The leader proceeds step by step to the opposite electrode and the final jump bridges the test gap. It was found that the predischarge is propagated with a leader mechanism of stepwise expansion from the predischarge current waveforms measured by a shunt. The predischarge current is closely related to the amplitude and polarity of applied voltages, the gas pressure and the gap geometry. The time intervals between step leaders for the positive and negative polarities were inversely proportional to V.P$^2$. When the gas pressure increases in the positive polarity, statistical time lag to statistical time lag to streamer corona inception increase slightly, but the formative time lag to flashover is significantly decreased.

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ITO Thin Film Ablation Using KrF Excimer Laser and its Characteristics

  • Lee, Kyoung-Chel;Lee, Cheon;Le, Yong-Feng
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.20-24
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    • 2000
  • This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

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