• Journal of Microbiology and Biotechnology
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• v.14 no.6
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• pp.1120-1128
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• 2004

The SCBFC was composed of bilayered cathode, the outside of which was modified with $Fe^{3+}$ (graphite-Fe(III) cathode) and the inside of which was porcelain membrane, and of an anode which was modified with $Mn^{4+}$ (graphite­Mn(lV) anode). The graphite-Fe(III), graphite-Mn(IV), and porcelain membrane were designed to have micropores. The outside of the cathode was exposed to the atmosphere and the inside was contacted with porcelain membrane. In all SCBFCS the graphite-Fe(III) was used as a cathode, and graphite-Mn(IV) and normal graphite were used as anodes, for comparison of the function between normal graphite and graphite-Mn(IV) anode. The potential difference between graphite-Mn(IV) anode and graphite-Fe(III) cathode was about 0.3 volt, which is the source for the electron driving force from anode to cathode. In chemical fuel cells composed of the graphite-Mn(IV) anode and graphite-Fe(III) cathode, a current of maximal 13 mA was produced coupled to oxidation of NADH to $NAD^{+}$ the current was not produced in SCBFC with normal graphite anode. When growing and resting cells of E. coli were applied to the SCBFC with graphite-Mn(IV) anode, the electricity production and substrate consumption were 6 to 7 times higher than in the SCBFC with normal graphite anode, and when we applied anaerobic sewage sludge to SCBFC with graphite-Mn(IV) anode, the electricity production and substrate consumption were 3 to 5 times higher than in the SCBFC with normal graphite anode. These results suggest that useful electric energy might possibly be produced from SCBFC without electron mediators, electrode-active bacteria, and extra energy consumption for the aeration of catholyte, but with wastewater as a fuel.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2131-2134
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• 2015

In this study, It has been demonstrated a new and realizable possibility of the ferroelectric random access memory devices by all solution processing method with paper substrates. Organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin films were formed on paper substrate with Al electrode for the bottom gate structure using spin-coating technique. Then, they were subjected to annealing process for crystallization. The fabricated PVDF-TrFE thin films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It was found from polarization versus electric field (P-E) measurement that a PVDF-TrFE thin film on paper substrate showed very good ferroelectric property. This result agree well with that of a PVDF-TrFE thin film fabricated on the rigid Si substrate. It anticipated that these results will lead to the emergence of printable electron devices on paper. Furthermore, it could be fabricated by a solution processing method for ferroelectric random access memory device, which is reliable and very inexpensive, has a high density, and can be also fabricated easily.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• Corrosion Science and Technology
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• v.6 no.3
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• pp.103-111
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• 2007

The effect of stress factors on the growing process of stress corrosion cracking (SCC) of the sensitized 18-8 stainless steel in high temperature water was investigated using equations of crack growth rate derived from applying electric circuits to SCC corrosion paths. Three kinds of cross sections have to be considered when electric circuit is constructed using total current. The first is ion flow passage area, $S_{sol}$, of solution in crack, the second is total dissolving surface area, $S_{dis}$, of metal on electrode of crack tip and the third is dissolving cross section, $S_{met}$, of metal on grain boundary or in base metal or in welding metal. Stress may affect each area. $S_{sol}$ may depend on applied stress, $\sigma_{\infty}$, related with crack depth. $S_{dis}$ is expressed using a factor of $\varepsilon(K)$ and may depend on stress intensity factor, K only. SCC crack growth rate is ordinarily estimated using a variable of K only as stress factor. However it may be expected that SCC crack growth rate depends on both applied stress $\sigma_{\infty}$ and K or both crack depth and K from this consideration.$\varepsilon(K)$ is expressed as ${\varepsilon}(K)=h_2{\cdot}K^2+h_3{\cdot}K^3$ when $h_{2}$ and $h_{3}$ are coefficients. Also, relationships between SCC crack growth rate, da/dt and K were simulated and compared with the literature data of JBWR-VIP-04, NRC NUREG-0313 Rev.2 and SKIFS Draft. It was pointed out in CT test that the difference of distance between a point of application of force and the end of starter notch (starting point of fatigue crack) may be important to estimate SCC crack growth rate. An anode dissolution current density was quantitatively evaluated using a derived equation.

• Journal of the Korean GEO-environmental Society
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• v.19 no.10
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• pp.5-11
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• 2018

The PBD (Plastic Board Drain) method is one of effective ground improvement methods on the soft dredging reclamation ground. This method has outstanding economic efficiency and constructability, and it is widely used for the soft ground improvement. However, the PBD method reduces permeability and drainage capacity of the ground due to the long construction period. Therefore, the nano coated Plastic drain board (PDB) was developed to solve problems. It is the non-metallic electrode and improves the weakness of the PBD method by using electric force of the electro-osmosis method. Various researches have been conducted to apply the nano coated PDB, but these researches were limited to model tests in laboratory. In this study, model and field tests were conducted to assess field applicability of the nano coated PDB. The result showed that the nano coated PDB had the better effect on the ground improvement compared to the normal PDB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• Journal of Power System Engineering
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• v.10 no.2
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• pp.104-110
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• 2006

Corrosion has been around for all of recorded history. Cathodic protection is the electrical solution to the corrosion problem. Corrosion is not exactly a new topic. It has been around since the beginning of time. Corrosion is simply the loss of material resulting from current leaving a metal, following through a medium, and returning to the metal at a different point. Corrosion takes many forms and has various names, such as oxidation, rust, chemical, and bacteria action. Regardless of the agent, all corrosion is the result of electrical current flow. Various methods are used to treat corrosion or to try to prevent ti. Some of these include chemical treatment. coatings, and electrical current. Especially, proper impressed current can stop corrosive action on the protected surface. In this article, we introduce the Impressed Current Cathodic Protection (ICCP) Control and monitoring system developed by ourselves. The ICCP system is composed of a power supply, anode, reference electrode and controller. The main issue is to control the current flow on the desired value such that it is possible to force a metal to be more negative(cathodic) than the natural state. From the this process, we can achieve the cathodic protection. Of course, in the developed system, the necessary functions are possessed, such as remote control, monitoring of system fault detection etc. Some experimental results show the system performance and usefulness.

• Applied Chemistry for Engineering
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• v.19 no.6
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• pp.583-591
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• 2008

Recently, as a demand for the portable device is surged, there are needs to develop a new fuel cell system for replacing the conventionally used secondary battery. For this purpose, it becomes important to develop direct formic acid fuel cell (DFAFC) that uses formic acid as a fuel. The formic acid can offer typical advantages such as excellent non-toxicity of the level to be used as food additive, smaller crossover flux through electrolyte, and high reaction capability caused by high theoretical electromotive force (EMF). With the typical merits of formic acid, the efforts for optimizing reaction catalyst and cell design are being made to enhance performance and long term stability of DFAFC. As a result, to date, the DFAFC having the power density of more than $300mW/cm^2$ was developed. In this paper, basic performing theory and configuration of DFAFC are initially introduced and future opportunities of DFAFC including the development of catalyst for the anode electrode and electrolyte, and design for the optimization of cell structure are discussed.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.94-98
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• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.78-83
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• 2012

The electrophoretic deposition(EPD) of ZnO nano-sized colloids is investigated by changing the colloid number concentration, applied force, and deposition time. The change of the colloid size in a suspension was examined by the different colloid number concentrations (N = $3.98{\times}10^{15}$, N = $3.98{\times}10^{14}$, and N = $3.98{\times}10^{13}$) with an increase of the deposition time and applied forces. Deposition behavior was investigated by changing the applied fields (from DC 5 V to 50 V) and the deposition time (5 min to 25 min). The surface microstructures of the as-deposited films were investigated by SEM. The dried films were sintered from $850^{\circ}C$ to $1,050^{\circ}C$ for 2 h and then the microstructures were also explored by SEM. The agglomeration rate was enhanced by increasing the colloid number concentration of colloids. Colloid number concentration in a suspension must be rapidly decreased at higher values of the electric field. ZnO nano-sized colloids had the highest zeta potential value of over -28 mV in methanol. A homogeneous microstructure was obtained at colloid number concentration of N = $3.98{\times}10^{13}$, applied DC field of 5 V/cm and 15 min of deposition time at an electrode distance of 1.5 cm. Under these conditions, the deposited films were sintered at $850^{\circ}C$ and $1,050^{\circ}C$ for 2 h. The results show a typical pore-free surface morphology of a uniform thickness of 400 nm under these experimental conditions.