• Title/Summary/Keyword: Electrode fabrication

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Effect of Oxygen Incorporation in the Fabrication of TiN Thin Film for Frame by UBM Sputtering System (UBM Sputtering System에 의한 안경테용 TiN막 제작에 있어 Oxygen 영향 연구)

  • Park, Moon Chan;Lee, Jong Geun;Joo, Kyung Bok;Lee, Wha Ja;Kim, Eung Soon;Choi, Kwang Ho
    • Journal of Korean Ophthalmic Optics Society
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    • v.14 no.1
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    • pp.63-68
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    • 2009
  • Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The effect of oxygen incorporation in the fabrication of deposited films was investigated. Methods: The cross sections of deposited films on Silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS survey spectra, the compositional depth-profile of deposited films was examined by an XPS apparatus. Results: From the data of XPS depth profile of films, it could be seen that the element O as well as the elements Ti and N present in the surface of the film and the relative percentage of the element O was constant at 65 at.% with respect to the depth of film. Conclusions: The color change with thickness of the films had something to do with the change of Ti $ 2p_{3/2}$ peak intensity and shape mixed of $ TiO_2$, TiN, $ TiO_{x}N_{y}$ compound.

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Fabrication of pyroelectric IR sensors with PLT thin plates compensating for piezoelectric effect (PLT 박편을 이용한 압전특성이 보상된 초전형 적외선 센서의 제작)

  • Kim, Young-Eil;Roh, Yong-Rae;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.1-5
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    • 1997
  • Highly sensitive pyroelectric IR sensors were fabricated with La-modified $PbTiO_{3}(PLT)$ thin plates compensating for piezoelectric effect. The device was fabricated in a dual form by placing two PLT cells, each of $1{\times}2\;mm^{2}$, side by side with appropriate electrode configuration. The dual element sensor had a signal to noise ratio of about 350 that was much larger than that of single element sensors. Further the dual element sensors exhibited excellent pyroelectric properties such as a large voltage responsivity of 2400 V/W, a pyro-coefficient of $4.6{\times}10^{-8}\;C/cm^{2}K$, a voltage figure of merit of $4.2{\times}10^{-11}\;Ccm/J$, and a small thermal time constant of 8.7 msec. It was confirmed through experiments that the dual element sensor was applicable to detect the two-dimensional moving direction of human beings.

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Au Electrode Characteristics and Fabrication of Si Drug Reservoirs for a Transdermal Drug Delivery System (경피 약물전달시스템을 위한 약물 저장용 Si 구조물 제작 및 Au 전극 특성)

  • Song, Tae-Eun;Kim, Dong-Bok;Han, Seung-Ho;Kim, Sang-Bum;Lee, Byoung-Kab;Oh, Sang-Woo;Yang, Sang-Sik;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.2143-2145
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    • 2004
  • 본 논문은 미세공정을 이용하여 다중전극을 배열하여 전압 인가에 의해 선택적으로 약물 방출이 가능한 구역화된 약물 저장용 구조물의 설계 및 제작에 관한 것이다. 두께 525${\mu}m$ 언 (100) Si wafer를 이용하여 TMAH 용액의 조성 및 온도에 따라 Si 식각 기초실험을 하고 그 결과를 이용하여 최적 식각조건을 설정하였다. 구조물 opening 크기를 다양하게 설계하여 미량의 약물을 선택적으로 방출할 수 있게 하고자 역 피라미드 형태의 약물 저장용 구조물을 제작하였다. 전압 인가에 의한 약물 방출시 Au 전극의 특성을 고찰하고자 저장 구조물 위에 anode의 면적과 anode 전극간 거리를 변화시켜서 설계 및 제작하였고, polyimide를 전극 사이의 절연막으로 이용하였다. 제작된 구조품의 전극 특성은 5V의 설정전압을 인가하였을 경우 2500s 동안 0.25mA로 안정적으로 유지되었으나 10V, 15V, 20V일 경우 전극의 산화현상으로 Au 전극이 부식이 되어 전류가 안정적으로 흐르지 않는 것을 알 수 있었으며, 약물전달시스템에서 안정적인 전류 공급을 위해서는 Au 전극이 산화 되지 않는 전압 인가 조건 및 시간은 설정해야 함을 알 수 있었다.

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Si-Containing Nanostructures for Energy-Storage, Sub-10 nm Lithography, and Nonvolatile Memory Applications

  • Jeong, Yeon-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.108-109
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    • 2012
  • This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

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Synthesis and Characterization of H3PO4 Doped Poly(benzimidazole-co-benzoxazole) Membranes for High Temperature Polymer Electrolyte Fuel Cells

  • Lee, Hye-Jin;Lee, Dong-Hoon;Henkensmeier, Dirk;Jang, Jong-Hyun;Cho, Eun-Ae;Kim, Hyoung-Juhn;Kim, Hwa-Yong
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3279-3284
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    • 2012
  • Poly(benzimidazole-co-benzoxazole)s (PBI-co-PBO) are synthesized by polycondensation reaction with 3,3'-diaminobenzidine, terephthalic acid and 3,3'-dihydroxybenzidine or 4,6-diaminoresorcinol in polyphosphoric acid (PPA). All polymer membranes are prepared by the direct casting method (in-situ fabrication). The introduction of benzoxazole units (BO units) into a polymer backbone lowers the basic property and $H_3PO_4$ doping level of the copolymer membranes, resulting in the improvement of mechanical strength. The proton conductivity of $H_3PO_4$ doped PBI-co-PBO membranes decrease as a result of adding amounts of BO units. The maximum tensile strength reaches 4.1 MPa with a 10% molar ratio of BO units in the copolymer. As a result, the $H_3PO_4$ doped PBI-co-PBO membranes could be utilized as alternative proton exchange membranes in high temperature polymer electrolyte fuel cells.

Direct Patterning Technology of Indium Tin Oxide Layer using Nd:$YVO_4$ Laser Beam (Nd:$YVO_4$ 레이저 빔을 이용한 인듐 주석 산화물 직접 묘화 기술)

  • Kim, Kwang-Ho;Kwon, Sang-Jik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.8-12
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    • 2008
  • For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

Fabrication of a periodically poled MgO : $LiNbO_3$ ridge waveguide for a green laser generation (녹색 광 발진을 위한 주기적 분극 반전된 MgO : $LiNbO_3$ ridge waveguide 제작)

  • Yang, W.S.;Kwon, S.W.;Song, M.K.;Lee, H.M.;Kim, W.K.;Koo, K.H.;Yoon, D.H.;Lee, H.Y.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.4
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    • pp.151-155
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    • 2007
  • Quasi-phase-matched (QPM) second harmonic generation (SHG) waveguide devices for a green light generation were fabricated by a periodically patterned electrode on the +Z crystal surface and homogeneous LiCl solution using a 5 mol% MgO doped congruent z-cut lithium niobate crystals. Using selective chemical etching, we confirmed the periodic (${\sim}6.8{\mu}m$) domain inverted structure and measured SHG properties of fabricated periodically poled MgO : $LiNbO_3$ ridge-type waveguides.

Deposition of Nanocrystals using Phase Separation on Flexible Substrates (유연기판위에 상분리를 이용한 반도체 나노입자 증착)

  • Oh, Seung-Kyun;Chung, Kook-Chae;Kim, Young-Kuk;Choi, Chul-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.284-284
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    • 2009
  • We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

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Fabrication and Characteristics of Micro Platform for Micro Gas Sensor with Low Power Consumption (마이크로 가스센서의 저전력 구동을 위한 마이크로 플랫폼의 제작과 특성)

  • Jang, Woong-Jin;Park, Kwang-Bum;Kim, In-Ho;Park, Soon-Sup;Park, Hyo-Derk;Lee, In-Kyu;Park, Joon-Shik
    • Journal of Sensor Science and Technology
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    • v.20 no.5
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    • pp.317-321
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    • 2011
  • A Micro platform for micro gas sensor consisted of micro heater, insulator, and sensing electrode on 2 ${\mu}m$ thick $SiN_x$ membrane. Three types of micro platforms were designed and fabricated with membrane sizes. Total size of micro platform was 2.6 mm by 2.6 mm. Measured power consumptions were 28 mW, 28 mW, and 32.5 mW for Type 1, Type 2, and Type 3. At this moment, temperatures of membranes on the platforms were $295^{\circ}C$, $297^{\circ}C$, and $296^{\circ}C$, respectively. Fabricated micro platform considered appropriate to apply for low power consumption micro gas sensor. Micro gas sensors were prepared by the sequence that $SnO_2$ nanopowder pastes were dropped on membrane of Type 1 platforms, dried in oven, heat-treated with micro heaters in platforms. One of the micro gas sensors was tested for gas response to 1157 ppm, 578 ppm, and 231 ppm of methane and 1.68 ppm, 0.84 ppm, and 0.42 ppm of $NO_2$.

Design, Fabrication and Characterization of Lateral PZT actuator using Stiffness Control (강성제어 구조물을 이용한 수평구동형 박막 PZT 엑츄에이터의 설계, 제작 및 특성평가)

  • 서영호;최두선;이준형;이택민;제태진;황경현
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.756-759
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    • 2004
  • We present a piezoelectric actuator using stiffness control and stroke amplification mechanism in order to make large lateral displacement. In this work, we suggest stiffness control approach that generates lateral displacement by increasing the vertical stiffness and reducing the lateral stiffness using additional structure. In addition, an additional structure of a serpentine spring amplifies the lateral displacement like leverage structure. The suggested lateral PZT actuator (bellows actuator) consists of serpentine spring and PZT/electrode layer which is located at the edge of the serpentine spring. The edge of the serpentine spring prevents the vertical motion of PZT layer, while the other edge of the serpentine spring makes stroke amplification like leverage structure. We have determined dimensions of the bellows actuator using ANSYS simulation. Length, width and thickness of PZT layer are 135$\mu$m, 20$\mu$m and 0.4$\mu$m, respectively. Dimensions of the silicon serpentine spring are thickness of 25$\mu$m, length of 300$\mu$m, and width of 5$\mu$m. The bellows actuator has been fabricated by SOI wafer with 25$\mu$m-top silicon and 1$\mu$m-buried oxide layer. The bellows actuator shows the maximum 3.93$\pm$0.2$\mu$m lateral displacement at 16V with 1Hz sinusoidal voltage input. In the frequency response test, the fabricated bellows actuator showed consistent displacement from 1Hz to 1kHz at 10V. From experimental study, we found the bellows actuator using thin film PZT and silicon serpentine spring generated mainly laterally displacement not vertical displacement at 16V, and serpentine spring played role of stroke amplification.

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