• 제목/요약/키워드: Electrode damage

검색결과 134건 처리시간 0.026초

Voltammetric Studies of Cu-Adriblastina Complex and its Effect on ssDNA-Adriblastina Interaction at In Situ Mercury Film Electrode

  • D.Abd El Hady;M.Ibrahim Abdel Hamid;M.Mahmoud Sellem;N.Abo E Maali
    • Archives of Pharmacal Research
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    • 제27권11호
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    • pp.1161-1167
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    • 2004
  • Adriblastina, a cancerostatic anthracycline antibiotic, causes considerable oxidative damage to DNA molecules. The interaction of this compound with DNA was investigated using Osteryoung square wave stripping voltammetry (OSWSV) and cyclic voltammetry (CV) at an in situ mercury film electrode. It was found that the equilibrium constant of the bonded oxidized form of the drug was 63 times bigger more important than that of the bonded reduced form. Copper forms 1 metal: 2 drug stoichiometry complex which is highly stable compared to ssDNA-drug interaction and consequently inhibited the drug biochemical damaging effects. Copper complex offered sub-nanogram determination of adriblastina in aqueous and urine media.

자계 분포 변화에 따른 OLED용 Al 박막의 제작 (Preparation of Al Thin Film with Magnetic Field Distribution)

  • 김현웅;조범진;금민종;김경환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.65-67
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    • 2005
  • The Al electrode for OLED was prepared by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the cell (Lif/EML/HTL/Bottom electrode : ITO) for examination the current-voltage properties of OLED with magnetic field distribution between two faced targets. Thickness and current-voltage properties of Al thin films are measured by ${\alpha}-step$ and semiconductor parameter analyzer (HP4156A), respectively.

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Characteristics of a Corona between a Wiring Clamp (Dead End Clamp) and a Porcelain Insulator Used in a 154kV Power Receptacle

  • Han, Woon-Ki
    • International Journal of Safety
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    • 제7권1호
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    • pp.21-25
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    • 2008
  • The occurrence of a corona is that electrical discharge due to the heterogeneity that occurs when an electrical field is concentrated in an electrode due to a cusp formed on said electrode. Wire treatment at the end of a 154kV dead end clamp for end users accelerates the occurrence of corona, which in turn leads to power loss and noise. In this study, the characteristics of the corona which occurs between porcelain insulators and support clamps of overhead lines used in l54kV power receiving facilities for end users were investigated. The corona, which cannot be identified by one common method, was measured utilizing a UV image camera. A risk assessment for fire damage and its status was suggested. The stress distribution of the electrical field by length of bare wire was suggested by means of the finite element method (FEMLAB). As a result, it was found to affect a porcelain insulators. These results can be utilized for the enhancement of clamp installation and safety in power facilities.

BLT 박막의 CMP 공정시 압력에 따른 Surface Morphology 및 Defects 특성 (Characteristics of Surface Morphology and Defects by Polishing Pressure in CMP of BLT Films)

  • 정판검;이우선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.101-102
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    • 2006
  • PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

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DC 스퍼터링 증착에 의한 AI 전극을 갖는 전계발광소자 제작 (Fabrication of the Electroluminescence Devices with Al electrode deposited by DC sputtering)

  • 윤석범
    • 한국전기전자재료학회논문지
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    • 제13권5호
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    • pp.376-382
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    • 2000
  • We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

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ESS 리튬배터리의 과충전 및 외부수열에 따른 화재위험성에 관한 실험적 연구 (An Experimental Study on Fire Risks Due to Overcharge and External Heat of ESS Lithium Battery)

  • 김시국;최수길;진세영;방석성
    • 한국화재소방학회논문지
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    • 제33권4호
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    • pp.59-69
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    • 2019
  • 본 논문은 ESS 리튬배터리의 과충전 및 외부수열에 따른 화재위험성에 관한 실험적 연구이다. 과충전 실험결과 벤트 발생 후 가연성 가스 및 연기가 서서히 증가되다 착화가 발생했고, 충전된 에너지가 한순간에 급격히 방출되면서 화염분출 및 불티를 동반한 폭발적인 연소형태가 나타났다. 반면, 외부수열 실험결과 벤트 발생 후 엄청난 양의 가연성 가스 및 연기가 다량 배출되다 착화되어, 방출된 에너지로 인해 충전된 에너지양 자체가 급격히 감소되어 화염발생 후 과충전과 비교했을 때 소극적인 연소형태가 나타났다. 소손특성 분석결과 육안 및 X-ray 검사를 통해 과충전과 외부수열(외부화염)의 차이점을 찾을 수 있었다. 즉, 과충전의 경우 내부 극판이 완전히 파괴되어 부서지고, 극판에서 천공이 관찰되었으나, 외부수열의 경우 내부 전극판의 소손정도가 심하지 않고 형태를 유지하고 있었다.

Advanced Microwave Plasma Technology for Liquid Treatment

  • Toyoda, Hirotaka;Takahashi, T.;Takada, N.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.121.1-121.1
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    • 2014
  • Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

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Electroplating process for the chip component external electrode

  • Lee, Jun-Ho
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2000년도 추계학술발표회 초록집
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    • pp.1-2
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    • 2000
  • In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

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유기물 광전소자 제작을 위한 박스 캐소드 스퍼터 기술 (Box Cathode Sputtering Technologies for Organic-based Optoelectronics)

  • 김한기
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.373-378
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    • 2006
  • We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

유기물 광전소자 제작을 위한 박스 캐소드 스퍼터 기술 (Box Cathode Sputtering Technologies for Organic Optoelectronics)

  • 김한기;이규성;김광일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.53-54
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    • 2005
  • We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

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