• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• 한국진공학회지
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• 제9권4호
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• pp.379-381
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• 2000

Organic materials have potential advantages to be utilized as semiconductors in field effect transistors and light emmiting diodes. Gold, Aluminium, Silver, Chromium and Indium are used by electrodes. Gold is ohmic contact and the others are schottky contact. In this study, Pentacene and various electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned for measurements. These devices showed no degration after a 15 days of storage in laboratory environment.

• Progress in Superconductivity
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• 제10권2호
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• 한국산업융합학회 논문집
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• 제24권6_2호
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• pp.909-917
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• 2021

This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.

• 한국수소및신에너지학회논문집
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• 제22권4호
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• pp.504-511
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• 2011

Nano-sized Sn powder was prepared by pulsed wire evaporation method. The Sn powder and carbon black were charged in jar and ball milled. The milling time was varied with 10 min., 1h, 2h, and 4h, respectively. The milled powders were dried and the shape and size were observed by FE-SEM. Nano-sized Sn powders were plastic-deformed and agglomerated by impact force of balls and heat generated during the SPEX milling. The agglomerated Sn powder also consisted of many nano-sized particles. Initial discharge capacities of milled Sn electrode powders with carbon powder were milled for 10 min., 1h, 2h, and 4h were 787, 829, 827, and 816 mAh/g, respectively. After 5 cycle, discharge capacities of Sn electrode powders with carbon powder milled for 10 min., 1h, 2h, and 4h decreased as 271, 331, 351, and 287 mAh/g, respectively. Because Sn electrode powders milled for 2h constist of uniform and fine size, the cyclability of coin cell made of this powders is better than others.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.149-149
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• 2009

Generally, Nafion ionomer is used in the polymer electrolyte fuel cell (PEFC) electrodes to achieve high power density. At the high temperature operation of PEFC, however, ionic conductivity of Nafion remarkably decreased due to the evaporation of water in Nafion polymer. Recently, many researchers have focused on using the Ionic Liquids(ILs) instead of water in Nafion polymer. ILs have intrinsic properties such as good electrochemical stability, high ionic conductivity, and non-flammability. Especially, ILs play a crucial role in proton conduction by the Grottuss mechanism and act as water in water-free Nafion polymer. However, it was found that the ILs was leached out of the polymer matrix easily. In this study, we prepared membrane electrode assemblies with various contents of ILs. The effect of ILs in the electrode of each designed was investigated by a cyclic voltammetry measurement and the cell performance obtained through a single cell test using H2/Air gases. Electrodes with different contents of ILs in catalyst layer were examined at high temperature and low humidified condition.

• 센서학회지
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• 제14권4호
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• pp.258-264
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• 2005

Li+-ion conducting ($Li_{3}PO_{4}$) thin films with thickness of $0.3{\mu}m$, $0.65{\mu}$, $1.2{\mu}$ were deposited on $Al_{2}O_{3}$ substrate at room temperature by thermal evaporation. They were sintered at $700^{\circ}C$ and $800^{\circ}C$ for 2 hours, respectively. Reference electrode and sensing electrode were printed on Au-electrode by silk printing method. The EMF and the ${\Delta}EMF$/dec were increased with increasing the electrolyte thickness and sintering temperature. The sample sintered at $800^{\circ}C$ was shown a good response and recovery characteristics more than those sintered at $700^{\circ}C$. The Nernst's slop of 75 mV per decade was obtained at operating temperature of $500^{\circ}C$.

• 한국응용과학기술학회지
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• 제20권2호
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.