• Title/Summary/Keyword: Electroconductive composites

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The Properties of $\beta-SiC-TiB_2$ Electroconductive Ceramic Composites Densified by Liquid-Phase Sintering (액장 소결한 $\beta-SiC-TiB_2$계 전도성 복합체의 특성)

  • Yim, Seung-Hyuk;Shin, Yong-Deok;Song, Joon-Tae
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.9
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    • pp.510-515
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    • 2000
  • The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

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Electroconductive Graphene-Combined Polycaprolactone Electrospun Films for Biological Applications (생체적 적용을 위한 전기전도성을 갖는 그래핀과 폴리카프로락톤 복합물질 전기방사 섬유형 필름)

  • Oh, Jun-Sung;Lee, Eun-Jung
    • Korean Journal of Materials Research
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    • v.31 no.5
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    • pp.278-285
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    • 2021
  • This study produces electroconductive polycaprolactone (PCL)-based film with different amounts of graphene (G) through electrospinning, and the characteristics of the produced G/PCL composites are investigated. The G/PCL results are analyzed by comparing them with those obtained using pure PCL electrospun film as a control. The morphology of electrospun material is analyzed through scanning electron microscopy and transmission electron microscopy. Mechanical and electrical properties are also evaluated. Composites containing 1 % graphene have the highest elongation rate, and 5 % samples have the highest strength and elasticity. Graphene contents > 25 % show electro-conductivity, which level improves with increase of graphene content. Biological characteristics of G/PCL composites are assessed through behavioral analysis of neural cell attachment and proliferation. Cell experiments reveal that compositions < 50 % show slightly reduced cell viability. Moreover, graphene combinations facilitated cell proliferation compared to pure PCL. These results confirm that a 25 % G/PCL composition is best for application to systems that introduce external stimuli such as electric fields and electrodes to lead to synergistic efficiency of tissue regeneration.

Properties of SiC-Ti $B_2$ Electroconductive Ceramic Composites by Pressureless Annealing (무가압 Annealing한 $SiC-TiB_2$전도성 세라믹 복합체의 특성)

  • 신용덕;주진영;최광수;오상수;윤양웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.2
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    • pp.80-84
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    • 2003
  • The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

Properties of SiC-$ZrB_2$ Electroconductive Ceramic Composites by Spark Plasma Sintering (방전플라즈마 소결에 의한 SiC-$ZrB_2$ 도전성 세라믹 복합체 특성)

  • Shin, Yong-Deok;Ju, Jin-Young;Jo, Sung-Man;Lee, Jung-Hoon;Kim, Cheol-Ho;Lee, Hee-Seung
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1252_1253
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    • 2009
  • The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

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Manufacture and Properties of $SiC-TiB_2$Electroconductive Ceramic Composites for Pressureless Sintering (상압소결을 위한 $SiC-TiB_2$ 전도성 세라믹 복합체의 제조와 특성)

  • Ju, Jin-Yeong;Sin, Yong-Deok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.10
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    • pp.500-503
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    • 2001
  • The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

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Effect of In Situ YAG on Microstructure and Properties of the Pressureless-Sintered $SiC-ZrB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 $SiC-ZrB_2$ 전도성(電導性) 복합체(複合體)의 미세구조(微細構造)와 특성(特性)에 미치는 In Situ YAG의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.505-513
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    • 2006
  • The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

Effects of In Situ YAG on Properties of the Pressurless Annealed Sic-$TiB_2$ Electroconductive Ceramic Composites (무가압 어닐드한 Sic-$TiB_2$ 전도성 복합체의 특성에 미치는 In Situ YAG의 영향)

  • Shin, Yong-Deok;Ju, Jin-Young;Ko, Tae-Hun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.5
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    • pp.808-815
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    • 2008
  • The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

Properties of $SiC-ZrB_2$ Electroconductive Ceramic Composites by Spark Plasma Sintering (SPS 소결에 의한 $SiC-ZrB_2$ 도전성 세라믹 복합체 특성)

  • Ju, Jin-Young;Lee, Hui-Seung;Jo, Sung-Man;Lee, Jung-Hoon;Kim, Cheol-Ho;Park, Jin-Hyoung;Shin, Yong-Deok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.9
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    • pp.1757-1763
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    • 2009
  • The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

Electrical Resistivity and Fracture Toughness of SiC-ZrB2

  • Shin, Yong-Deok;Ju, Jin-Young;Kwon, Ju-Sung
    • The Korean Journal of Ceramics
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    • v.5 no.4
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    • pp.400-403
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    • 1999
  • The mechanical and electrical properties of hot-pressed and annelaed $\beta$-SiC+39vol.% $ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$(6:4 wt%). In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$ grains were observed between $\beta$-SiC and $ZrB_2$. The properties of the $\beta$-SiC+39vol.%$ZrB_2$ composites with 4wt% $Al_2O_3+Y_2O_3$ at R.T. are as follows: fracture toughness is 6.37 MPa.m1/2, electical resistivity is $1.51\times10^{-4}\Omega \cdot\textrm{cm}$ and the relative density is 98.6% of the theoretical density. The fracture toughness of the $\beta$-SiC+39 vol.% $ZrB_2$ composites were weakly decreased with increasing amount of $Al_2O_3+Y_2O_3$ additives. Internal stresses due to the difference of $\beta$-SiC and $ZrB_2$ thermal expansion coefficient and elastic modulus mismatch appeared to contribute to fracture toughening in $\beta$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites.

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Electrical discharge Machining of SiC-ZrB$_2$Electroconductive Ceramic Composities (SiC-ZrB$_2$계 도전성 복합 세라믹스의 방전가공)

  • 신용덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.320-325
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    • 1996
  • The influences of ZrB$_2$additives to the SiC and pulse width on electrical discharge machining of SiC-ZrB$_2$electroconductive ceramic composites were investigated. IIigher-flexural strength materials show a trend toward smaller crater volumes, leaving a soother surface; the average surface roughness of the SiC-ZrB$_2$15 Vol.% Composite with the flexural strength of 375㎫ was 3.2${\mu}{\textrm}{m}$,whereas the SiC-ZrB$_2$30 Vol.% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$composites, the SiC-ZrB$_2$two phaes are distinct; the white phase is the ZrB$_2$. In the micrograph of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present.

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