• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.23-30
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• 2000

To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.301-304
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• 1999

밀리미터파 대역의 아날로그 광전송을 위한 진행파형 (travel ing wave, TW) 전계흡수 광변조기 (electroabsorption modulator, EAM)와 광수신기의 설계에 대해 발표하고자 한다. TW EAM 및 TW 광수신기의 일반적인 형태인 ridge-type의 co-planar waveguide (CPW)구조에서의 마이크로파의 전송특성을 3차원 FDTD로 분석하여 광파와 전파의 속도 정합 등을 이루는 최적화 구조를 설계하였다. TW EAM의 경우 광세기 변조의 비선형 응답특성에 있어서 마이크로파 손실과 소자길이가 RF 신호의 혼변조 왜곡 (intermodulation distortion)과 SFDR (spurious free dynamic range)성능에 미치는 영향도 이론적으로 조사하였다. TW PIN 광수신기의 경우 광파와 마이크로파의 속도정합의 영향과 이전에는 고려되지 않았던 photo-generated 전송자의 진성 영역에서의 transit time이 광수신기의 밴드 폭에 미치는 영향을 분석하여 최적화 설계하였다.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.363-364
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• 2006

We developed 60 GHz analog optical transmitter modules for radio-over-fiber (RoF). They were consisted of an electroabsorption modulator (EAM), impedance matching circuit, and amplifier. The characteristics of fabricated modules were investigated by measuring the signal-to-noise ratio and the noise figure of the 60 GHz RoF link.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.48-51
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• 1997

A quantum well electroabsorption waveguide modulator utilizing a field-induced refractive index change was designed and fabricated. The on/off ratios of the device were investigated as a function of wavelength over the spectral range of 850 nm to 910 nm for the various reverse biases. The field-induced refractive index variations associated with quantum-confined Stark effect was theoretically obtained based on the measured on/off ratios. The resulting maximum refractive index change(${\DELTA}n) of ~7.5 {\times} 10^{-4}$ at -8 V was estimated.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.156-157
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• 2001

전계 흡수 광 변조기는 우수한 소광비와 낮은 전력 소모로 넓은 대역폭을 확보할 수 있으며 LD와의 단일 집적인 EML(electro-absorption modulator integrated laser diode)의 제작도 용이하므로 Microwave-Photonics 시스템에 매우 적합한 소자로써 근래에 활발한 연구가 진행되어지고 있다. 전계 흡수 광 변조기의 대역폭을 최대한 확보하기 위해서는 진행하는 마이크로파의 위상속도와 광파의 그룹 속도가 정합 되어야 하며 소자의 임피던스가 50Ω에 정합 되어야 한다. (중략)

• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.35-37
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• 2003

본 논문에서는 진행파형 전계 흡수 광 변조기를 3차원 FDTD를 이용하여 도파관의 폭과 진성영역의 두께 그리고 N-도핑층의 도핑수준을 변화시키면서 최적화된 구조를 설계하였다. 제작된 소자의 구조는 진성영역의 두께는 $0.9{\mu}m$, 도파관의 폭은 $6{\mu}m$이며 전체 소자의 길이는 $700{\mu}m$ 이다. 제작된 소자의 마이크로파 특성을 측정하였으며 마이크로파 특성과 광 특성을 사용하여 주파수 응답특성을 추정하였다. 소자의 길이가 $400{\mu}m$ 일 때 17.8 GHz의 주파수 응답특성을 얻었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.41-48
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• 2002

The bandwidth limitation of traveling-wave electroabsorption modulator(TW-EAM) is determined by the transit time, the velocity-mismatch between optical-wave and microwave, the impedance-matching, the dispersion and the microwave loss. In this paper, we introduce an hovel impulse response of TW-EAM considering transit time as well as velocity-mismatch. We analyze the effect of transit-time and velocity-mismatch at the same time, using the FDTD method. We investigate the modulation bandwidth by changing the depth of the intrinsic region. We suggest that the optimum depth of the intrinsic region is 0.2${\mu}{\textrm}{m}$ when the absorption coefficient($\alpha$) is 0.2${\mu}{\textrm}{m}$-1.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.45-54
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• 2004

Microwave characteristics of ridge type CPW traveling-wave(TW) electroabsorption modulator and photodetector are affected by the thickness of intrinsic layer, width of guiding layer, and the separation of signal and ground electrodes. These factors are determined effective index of microwave and characteristic impedance due to changing of capacitance(C) and inductance(L) of device. However, conventional equivalent circuit of TW-structure is approximated to microstrip and CPW transmission line by distribution of electric and magnetic fields, respectively. In this paper, we analyzed microwave characteristics of TW-structure and found more accurate value of C and L by using finite difference time domain (FDTD) method. These values are adopted circuit element of equivalent circuit. Microwave characteristics obtained by the FDTD and equivalent circuit model show good agreement.