• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.102-103
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• 1999

• ETRI Journal
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• v.27 no.1
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• pp.95-101
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• 2005

Waveguide structures of the stand-alone electroabsorption (EA) modulator and the electroabsorption modulated laser (EML) are investigated using the 3D beam propagation method. The EA waveguide structures with InP-based passivation layers show saturation in the extinction ratio (ER) due to the stray light traveling through the passivation layers. This paper demonstrates that narrower passivation layers suppress stray-light excitation in the EA waveguide, increasing the ER. A taper structure in the isolation section of the EML waveguide can reduce the mode mismatch and suppress the excitation of the stray light, increasing the ER further. Low-index-polymer passivation layers can confine the mode more tightly in the active waveguide, yielding an even higher ER.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.291-292
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• 2008

We fabricated 40Gbps electroabsorption modulator-integrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.31-31
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• 1996

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.580-587
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• 2003

In this paper, we introduce a novel model to analyze the linearity of a TW-EAM (traveling-wave electroabsorption modulator). The device length, microwave loss (ML), and internal reflection (IR) due to impedance mismatch have effect on the linearity of a TW-EAM. The longer devices have characteristics of lower biases with minimum IMDS (intermodulation distortions). ML decreases the output power as well as the IMD value. Internal reflection has different nonlinear characteristics according to the wavelength of the input frequency and the device length. There is little change in SFDR (spurious-free dynamic range) due to ML or IR. As a result, for a 50 GHz band RF-optical communication system, a 0.8 mm-long TW-EAM with the lowest ML would have better properties by using n, which is caused by impedance, mismatch at the output port.

• ETRI Journal
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• v.34 no.3
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• pp.361-368
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• 2012

A complete high-frequency small-signal circuit model of a 40 Gb/s butterfly electroabsorption modulator integrated laser module is presented for the first time to analyze and optimize its electro-optic (E/O) response and reflection characteristics. An agreement between measured and simulated results demonstrates the accuracy and validity of the procedures. By optimizing the bonding wire length and the impedance of the coplanar waveguide transmission lines, the E/O response increases approximately 5% to 15% from 20 GHz to 33 GHz, while the signal injection efficiency increases from approximately 15% to 25% over 18 GHz to 35 GHz.

• Journal of the Optical Society of Korea
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• v.19 no.4
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• pp.371-375
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• 2015

The impact of equivalent optical bandwidth on the performance of a system using a reflective electroabsorption modulator (R-EAM) based optical source has been experimentally evaluated with signals operating at 2.5 Gb/s and beyond. The equivalent optical bandwidth of our source with a broadband seed light was simply adjusted by using a bandwidth tunable optical filter. From the measurements, we have estimated the required equivalent optical bandwidth of our source for an error-free transmission (@ bit-error-rate of $10^{-12}$) and a forward error correction (FEC) threshold of $2{\times}10^{-4}$.

• ETRI Journal
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• v.28 no.4
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• pp.533-536
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• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.83-89
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• 1997

An optimize delectroabsorption modulator structure is designed for high speed optical communication systems considering the extinction efficiency, operating bandwidth, polarization loss, and wavelength chirping. the operating wavelength region is $1.55\mu\textrm{m}$ and the deep ridge structure is adapted for th eminimum polarization loss. Simulations show that the absorption layer thickness larger than $0.25\mu\textrm{m}$, and the modulator length shorter than $200\mu\textrm{m}$ are required for the bandwidth over 10GHz. To obtain the modulatiron efficiency over 10dB/V, a wavelength detuning needs to be determined less than 40meV.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.93-99
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• 1998

The chirping characteristics of InGaAsP electroabsorption modulatiors have been analyzed. The effective .alpha. parameters for large signal modulation were estimated by comparing the pulse shape after fiber transmission with constant chirping assumption.We investigated the structure and the operating condition of the modulator to improve the chirping characteristics. The .alpha. parameters were calculated as the function of wavelength detuning and the bias voltage. To minimize the chirping performance, high bias voltage and a small wavelength detuning and the bias voltage. To minimize the chirping performance, high bias voltage and a small wavelength detuning were preferred. An negative .alpha. value is achieved at the wavelength detuning below 30meV with a proper bias voltage so that pulse compression effect was expected.