• Title/Summary/Keyword: Electro-optical properties

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Synthesis and Electro-optical Properties of π-Conjugated Polymer Based on 10-Hexylphenothiazine and Aromatic 1,2,4-Triazole

  • Choi, Ji-Young;Kim, Dong-Han;Lee, Bong;Kim, Joo-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.9
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    • pp.1933-1938
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    • 2009
  • New $\pi$-conjugated polymer with vinylene linkage, poly((10-hexyl-3,7-phenothiazine)-alt-(4-(4-butyl-phenyl)- 3,5-diphenyl-4H-[1,2,4]triazole)-3,5-vinylene) (PTV-TAZ) was synthesized by the Heck coupling reaction. The photoluminescence (PL) maximum wavelength and the band gap energy of PTV-TAZ film were 555 nm and 2.41 eV, respectively. The HOMO energy level of PTV-TAZ was -4.99 eV, which was slightly lower than that of PTV (-4.89 eV). Electron deficient aromatic 1,2,4-triazole (TAZ) in the polymer backbone does not affect the HOMO energy level significantly. The maximum efficiency and brightness of double layer structured electroluminescent (EL) device (ITO/PEDOT (30 nm)/PTV-TAZ (60 nm)/Al) were 0.247 cd/A and 553 cd/$m^2$, respectively, which were significantly higher than those of the device based PTV (1.65 ${\times}\;10^{-4}$ cd/A and 4.3 cd/$m^2$). This is due to that TAZ unit improves electron transporting ability in the emissive layer. The turn-on voltage (defined as the voltage required to give a luminescence of 1 cd/$m^2$) of brightness of the device based on PTV-TAZ was 12.0 V, which was similar to that the based on PTV (11.5 V). This is due to that the ionization potential of PTV-TAZ is very similar to that of PTV.

Pretilt angle and EO Characteristics of Liquid Crystal via Ion-beam Irradiation Angles (이온빔 조사각도에 따른 액정의 프리틸트각과 전기 광학적 특성)

  • Lee, Kang-Min;Lee, Won-Kyu;Oh, Byeong-Yun;Kim, Byoung-Yong;Han, Jin-Woo;Jeon, Ji-Yeon;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.44-44
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    • 2008
  • To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

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Investigation of LC Alignment characteristic by Controlling Ion-beam Irradiation angles (이온빔 조사 각도에 따른 액정 배향 특성 연구)

  • Park, Hong-Gyu;Oh, Byeong-Yun;Kim, Young-Hwan;Kim, Byoung-Yong;Han, Jin-Woo;Chun, Ji-Yun;Han, Jeong-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.43-43
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    • 2008
  • Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges and rubbing scratch during rubbing process. Moreover rubbing method needs cleaning process to remove these defects. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam irradiation angles and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. We also achieved low pretilt angle as function of ion-beam irradiation angles. X-ray photoelectron spectroscopic (XPS) analysis provided chemical evidence for LC alignment by controlling ion-beam irradiation angles. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface. Some other experiments results and discussion will be included in the presentation.

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Study on Surface Characteristics of Fe Doped MgO Protective Layer (Fe가 첨가된 MgO 보호막의 표면특성 개선에 관한 연구)

  • Lee, Don-Kyu;Park, Cha-Soo;Kim, Kwong-Toe;Sung, Youl-Moon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.2
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    • pp.106-112
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    • 2010
  • In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

Syntheses of Improved Polymer/Organic Materials for Electroluminescence(EL) Device and Electro-Optical Characteristics(Ⅱ) Properties of EL Device using Squarylium Dye as Emitting Material (고기능 EL소자용 고분자/유기 재료의 합성 및 전기 광학적 특성(Ⅱ) Squarylium 색소를 이용한 EL소자의 특성)

  • Kim, Sung Hoon;Bae, Jin Seok;Hwang, Seok Hwan;Park, Lee Soon
    • Journal of the Korean Chemical Society
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    • v.41 no.3
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    • pp.144-149
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    • 1997
  • Organic electroluminescence devices(ELD) were fabricated using by molecularly doped method with N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) as a hole transport agent, squarylium dye as an emitting agent, and side chain liquid crystalline polymer(MCH) as matrix for TPD. An indium-tin-oxide(ITO) coated glass and an Mg electrode were used as the hole and the electron injecting electrode, respectively. The highest stability of ELD was obtained by spin coating method using dichloroethane as a solvent at a polymer/TPD concentration of 0.005 wt%. For the EL cell with ITO/polymer-TPD/SQ dye/Mg structure, we achieved light red luminescence at a current of 102 mA/$cm^2$ with an applied voltage of 23 V.

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Ferroelectric and Antiferroelectric Behavior in Chiral Bent-shaped Molecules with an Asymmetric Central Naphthalene Core

  • Lee, Seng-Kue;Tokita, Masatoshi;Shimbo, Yoshio;Kang, Kyung-Tae;Takezoe, Hideo;Watanabe, Junji
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2241-2247
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    • 2007
  • A new series of chiral bent-shaped liquid crystals with an asymmetric central core based on 1,6- dihydroxynaphthalene and chiral terminal chain prepared from (S)-(?)-2-methyl-1-butanol, 1,6-naphthalene bis[4-(4-alkoxyphenyliminomethyl)]benzoates [N(1,6)-n-O-PIMB(n-2)*-(n-4)O (n = 8-11)] were synthesized. Their mesomorphic properties and phase structures were investigated by means of electro-optical, polarization reversal current, and second harmonic generation measurements in order to confirm the relationship between the molecular structure and phase structure. All odd n (n = 9 and 11) compounds, N(1,6)-9-O-PIMB7*-5O and N(1,6)-11-O-PIMB9*-7O exhibit antiferroelectric phase, whereas even n (n = 8 and 10) compounds was flexible, N(1,6)-10-O-PIMB8*-6O exhibits the ferroelectric phase but N(1,6)-8-O-PIMB6*-4O exhibits the antiferroelectric phase. These results come from the decrease of the closed packing efficiency within a layer and the lack of uniform interlayer interaction between adjacent layers, which were caused by the asymmetrical naphthalene central core. Thus, we concluded that the structure of central core as well as the terminal chain plays an important role for the emergence of particular polar ordering in phase structures.

LC Orientation Characteristics of NLC on Polyimide Surface According to Ion-beam Irradiation Angles (이온빔 조사각도에 따른 네마틱 액정의 액정 배향 특성)

  • Lee, Kang-Min;Oh, Byeong-Yun;Park, Hong-Gyu;Lim, Ji-Hun;Lee, Won-Kyu;Na, Hyun-Jae;Kim, Byoung-Yong;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.329-329
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    • 2008
  • To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, noncontact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the poly imide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure poly imide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}4 for all of irradiation angles. In addition, it can be achieved the good ED properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

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Synthesis and Characterization of Thiophene-Based Copolymers Containing Urethane and Alkyl Functional Side Chains for Hybrid Bulk Heterojunction Photovoltaic Cell Applications

  • Im, Min-Joung;Kim, Chul-Hyun;Song, Myung-Kwan;Park, Jin-Su;Lee, Jae-Wook;Gal, Yeong-Soon;Lee, Jun-Hee;Jin, Sung-Ho
    • Bulletin of the Korean Chemical Society
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    • v.32 no.2
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    • pp.559-565
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    • 2011
  • The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

Electro-Optical Properties of AZO Thin Films with Deposition & Heat treatment Conditions (AZO 박막의 증착 및 열처리 조건에 따른 전기·광학적 특성)

  • Yeon, Eung-Beom;Lee, Taek-Yong;Kim, Seon-Tai;Lim, Sang-Chul
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.558-565
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    • 2020
  • AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al3+ ions of relatively small ion radius are substituted for Zn2+ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al2p and Oll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 1019 cm-3 of carrier concentration, 8.4 cm-2/V·s of mobility and 1.2 × 10-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

Optical and microstructural behaviors in the GaN-based LEDs structures with the p-GaN layers grown at different growth temperatures (GaN 기반 LED구조의 p-GaN층 성장온도에 따른 광학적, 결정학적 특성 평가)

  • Kong, Bo-Hyun;Kim, Dong-Chan;Kim, Young-Yi;Han, Won-Suk;Ahn, Cheol-Hyoun;Choi, Mi-Kyung;Cho, Hyung-Koun;Lee, Ju-Young;Kim, Hong-Seung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.144-144
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    • 2008
  • Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

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