• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.485-486
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• 2011

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술대회 논문집 전문대학교육위원
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• pp.83-86
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• 2003

In this paper, arbitrary pulse power for electro chemical etching, which manufactures the groove of fluid dynamic bearing and aero dynamic bearing, is presented. For high precision manufacture, we generally use high precision CNC machine. However, this case has the disadvantage that cost is very expensive and bur due to bites of tool can be generated. So most of companies are interested in the method of electro chemical etching. But for more precision results, it is important to decision the parameters of electrical conditions, such as currents and frequency. We designed and made the arbitrary pulse power system easy to input the parameters for optimal conditions. Experimental results show the effectiveness of the system strategy proposed for the high precision manufacture.

• 한국정밀공학회지
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• 제18권2호
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• pp.111-118
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• 2001

Tungsten probe is the most important part of a probe card, which is widely used for the performance test of wafer chips. Electro chemical etching becomes an exclusive choice for mass production of the tungsten probes. In the mass production, not only the shape of the probe but also the shape distribution of machined probes is important. A new method is proposed for the mass production of the tungsten probes. Tungsten wires are separated by a distance, and dipped into electrolyte. The dipping rate is controlled to shape the probes. Several experimental tests are performed to study the machining characteristics. From the test results, machining parameters including electrical conditions and anode position showed significant influences on the shape, repeatability, precision and quality of sharp tips.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.398-400
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• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• 한국결정성장학회지
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• 제8권2호
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• pp.249-254
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• 1998

GaN계 재료의 습식 화학식각 특성과 광 화학 및 전기 화학 및 전기 화학 습식식각 특성을 연구하였다. n형 GaN는 상온에서 NaOH 수용액에 식각되었으며 식각두께는 식각시간에 선형적으로 증가하였다. 또 광 조사 및 전기 화학을 가할 경우 식각율은 수배로 증가하였으며, 식각율은 $1{\times}10^{19};cm^{-3}$의 전자농도를 갖는 시료에서 광 조사시 최대 164${\AA}$/min을 얻었다. n-GaN의 식각율은 GaN의 전자농도에 크게 의존하는 특성을 나타내었으며 이러한 식각과정을 논의하였다. $SiO_2$ 박막으로 덮여진 100${\mu}m{\times}100{\mu}m$ 모양의 옆 식각면은 방향성을 갖지 않고 수직하였으며, 넓은 면적에서 매우 평탄하였다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2001년도 춘계학술대회 논문집
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• pp.217-220
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• 2001

In the shearing process the burr or rollover must be minimized in order to improve the quality of product. The burr size can be minimized by control of several process parameters. But removal of all burrs are impossible. Most mechanical type deburring methods (vibrating bowls, rotating barrels, shot blasting, for example.) will remove large burrs, other methods use chemical (electro-chemical deburring) or heat (thermal energy deburring). The electro-chemical deburring process removes burrs by the deplating method. Electro-chemical deburring equipment is requires a small capital investment than other methods(mechanical or thermal methods). Electro-chemical deburring method need to many parameters for control such as a time, voltage and concentration of electrolyte. In this paper shows relations of these parameters by experiment.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.449-452
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• 2004

To obtain the ultra-sharp tungsten tip, an analog to digital converter circuit aided by a personal computer has been setup. At the moment the lower part of the needle drops off during the etching process, a maximum current change across the reference resistor is detected by the PC interface card and the applied voltage is then cut off within a few milliseconds. Out experiment has been able to fabricate an ultra-sharp tungsten tip ~200 $\AA$ radius with a higher reproduction rate and reliability than the conventional method.

• Design & Manufacturing
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• 제13권1호
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• 한국표면공학회지
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• 제47권3호
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• pp.128-136
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• 2014

In the present study, we successfully developed an eco-friendly chemical etching solution and proper condition for plating on ABS material. The mechanism of forming Ni plating layer on ABS substrate is known as following. In general, the etching solution used for the etching process is a solution of chromic acid and sulfuric acid. The etching solution is given to the surface resulting in elution of butadiene group, so-called anchor effect. Such a rough surface can easily adsorb catalyst resulting in the increase of adhesion between ABS substrate and Ni plating layer. However a use of chromic acid is harmful to environment. It is, therefore, essential to develop a new alternative solution. In the present study, we proposed an eco-friendly etching solution composed of potassium permanganate, sulfuric acid and phosphoric acid. This solution was testified to observe the surface microstructure and the pore size of electrical Ni plating layer, and the adhesive correlation between deposited layers fabricated by electro Ni plating was confirmed. The result of the present study, the newly developed, eco-friendly etching solution, which is a mixture of potassium permanganate 25 g/L, sulfuric acid 650ml/L and phosphoric acid 250ml/L, has a similar etching effect and adhesion property, compared with the commercially used chromium acid solution in the condition at $70^{\circ}C$ for 5 min.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.