• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.429-430
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• 2010

• 대한기계학회논문집A
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• 제33권3호
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• pp.185-189
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• 2009

Focused ion beam system was designed, which includes LMIS, electrostatic lens and high voltage power supply. Control program is updated for high speed image processing. The details of vibration-free vacuum system and other important electrical parts were trouble-shooted for appropriately controlling high acceleration voltages.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.78-78
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• 1999

Experimental studies of laser micromachining on Mo metal using piezo Q-switched Nd:YAG laser have been performed. Miniaturized microcolumn electron gun arrays as a potential electron beam lithography or portable mini-scanning electron microscope application have recently extensively examined. For these purpose, the electro-static electron lens and deflector system called microcolumn has to be assembled. The conventional microcolumn fabrication technique would gave a limitation on the minimization of aberration. The current technique of a 1 $\mu$m misalignment would lead to ~1.3 nm coma. In order to reduce aberration, assembling the microcolumn component followed by laser drilling should be very beneficial. In this report, we will address the preliminary report of laser micromachining on Mo substrate using piezo Q-switched Nd:YAG laser. The geometrical figures, such as the diameter and the depth of the frilled aperture are dependent upon the total energy of the laser pulse train, laser pulsewidth, and the diameter of laser beam in addition to the materials-dependent parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].