• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.213-217
• /
• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• 대한기계학회논문집A
• /
• 제34권11호
• /
• pp.1643-1648
• /
• 2010

비자성체의 자기연마 공정에서는 공작물 표면에 발생하는 자속밀도가 매우 낮아 자기연마입자에 작용하는 절삭력이 현저히 낮아진다. 따라서 공작물 반대편에 전자석을 설치하여 공작물 표면의 자속밀도를 효과적으로 증가 시킬 수 있다. 본 연구에서는 전자석 배열 테이블을 비자성체의 자기연마에 활용하기 위해 전자석 배열에 따른 자속밀도 및 극성변화에 대한 시뮬레이션 및 실험적 검증을 수행하였다. 그 결과 전자석이 같은 극성을 가질 때 보다 중심부분 전자석을 기준으로 주변 전자석이 반대의 극성을 가질 때 중심부분의 전자석에서 가장 높은 자속밀도를 가지는 것을 확인할 수 있었다.

• Tribology and Lubricants
• /
• 제33권6호
• /
• pp.282-287
• /
• 2017

SU-8 is an epoxy-type photoresist widely used for the fabrication of high-aspect-ratio (HAR) micro-structures in micro-electro-mechanical systems (MEMS). To fabricate highly integrated structures, chemical mechanical polishing (CMP) has emerged as the preferred manufacturing process for planarizing the MEMS structure. In SU-8 CMP, an oxidizer decomposes organic impurities and particles in the CMP slurry remove the chemically reacted surface of SU-8. To fabricate HAR microstructures using the CMP process, the adhesion between SU-8 and substrate material is important to avoid the delamination of the SU-8 film caused by the mechanical-dominant material removal characteristic. In this study, the friction force during the CMP process is measured with a CMP monitoring system to detect the delamination phenomenon and investigate the delamination of the SU-8 film from the silicon substrate under various pressure conditions. The increase in applied pressure causes an increase in the frictional force and wafer-edge stress concentration. The frictional force measurement shows that the friction force changes according to the delamination phenomenon of the SU-8 film, and that it is possible to monitor the delamination phenomenon during the SU-8 CMP process. The delamination at a high applied pressure is explained by the effect of stress distribution and pad deformation. Consequently, it is necessary to control the pressure of polishing, which can avoid the delamination in SU-8 CMP.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.20-23
• /
• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 추계학술대회 논문집
• /
• pp.319-320
• /
• 2008

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 추계학술대회 논문집
• /
• pp.263-264
• /
• 2008

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2006년도 춘계학술발표회 초록집
• /
• pp.86-86
• /
• 2006

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2010년도 추계학술대회 논문집
• /
• pp.139-140
• /
• 2010

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
• /
• pp.102-102
• /
• 1996

This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2009년도 추계학술대회 논문집
• /
• pp.342-345
• /
• 2009

Electro galvanized steel is electroplated cold roller steel for improving corrosion resistance and paintability, and is widely used in automobiles and home appliances. In the electroplating line for manufacturing electro galvanized steel if plating process is carried out with impurity on conductor roll surface, the defects in manufacturing process occurs because of steel fault. For quality, polishing is always required to separate impurity on surface of conductor roll. In this study, finite element analysis of wear for polisher brush is carried out for replaced time of it.