• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.1
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• pp.597-604
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• 2016

The aim of this study was to prevent the decrease in crop output by disease and insect pests and excessive spraying of agricultural pesticides by application uniformity. A 3m height and 15km/h speed is difficult to maintain with an unmanned helicopter for aerial application, which has been affected by the controlling habits and methods or environmental factors, such as changes in the wind. Therefore, in this study, an aerial application system was design to be attached to an unmanned helicopter, which can allow a controlled application width and spray rate automatically and verified experimentally using Rmax of MS-AVIATION. The size of agricultural land was 50 m2 and nine water sensitive cards were arranged at 1.25m intervals in 5 rows with each row having a 10m interval from the position of 5m. The unmanned helicopter was flying at speeds ranging from 7.2km/h to 17.6km/h and heights ranging from 2.32m to 3.47m. The proposed aerial application system allowed application uniformity by making a valid spraying area of 7.5 m2 with 46423 particles distributed on average.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.176-185
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• 2009

The realization and the performance of ICP source are strongly affected by its electrical impedance and the electric/magnetic field distribution. The ICP source impedance is determined by the antenna impedance and the plasma one. It is preferred to keep the imaginary impedance between -100 ohm to 100 ohm, since it should be avoided the high voltage formation on the antenna and abrupt impedance variation during the thin film process. The plasma uniformity is affected by the electric and magnetic field which is formed by the antenna current and voltage. The influence of azimuthal symmetry are shown by the electromagnetic simulation and the measurement result of plasma density. The radial uniformity can be controlled by locating the concentric antennas which have different diameters. The power distribution ratio and its control method are presented in the case of parallel antenna connections.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.16-22
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• 2003

The purpose of this study was to provide visual evaluation data in a workstation space when different lighting types were applied. For the performance evaluation, Radiance program was used for simulations, and the mock-up room(15.0x11.6x3m) was used for the actual test. The results of this study were as follows; 1) When the inidirect lighting simulation data using Radiance was compared with the actual data in a small workstation space, there was a 6.5% difference. Therefore, Radiance program was proved to be useful for the evaluation of lighting performance. 2) Higher light levels (higher light ratio (%)) were recorded in the straddled layout and lower light levels (lower light ratio (%)) were recorded in the centered layout condition in most cases. 3) Also, the results show that the indirect luminaires and the straddled layouts provide higher uniformity, whereas the direct luminaires and the centered layouts have lower uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.136-139
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• 2004

The requirement of planarity, such as with-in-wafer nonuniformity, post thickness range, have become increasingly stringent as critical dimensions of devices are decreased and a better control of a planarity become important. The key factors influencing the planarity capability of the CMP process have been well understood through numerous related experiments. These usually include parameters such as process pressures, relative velocities, slurry temperature, polishing pad materials and polishing head structure. Many study have been done about polishing pad and its groove structure because it's considered as one of the key factors which can decide wafer uniformity directly. But, not many study have been done about polisher head structure, especially about polisher head plate design. The purpose of this paper is to know how the plate structure can affect wafer uniformity and how to deteriorate wafer yield. Furthermore, we studied several new designed plate to improve wafer uniformity and also improve wafer yield.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.115-118
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• 2011

Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.366-369
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• 2003

The vertical fountain plating system with the point contact has been used in semiconductor industry. But the plating shape in the opening of photoresist becomes gradated shape, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and $\alpha$-step. A photoresist was coated to a thickness of $60{\mu}m$ and vias were patterned by a contact aligner After via opening, solder layer was electroplated using the fountain plating system and the tilted electrode ring contact system. In $\alpha$-step measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were ${\pm}16%,\;{\pm}3.7%$ respectively. In this study, we could get high uniformity bumps by the tilted electrode ring contact system. So, tilted electrode ring contact system is expected to improve workability and yield in module process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.259-260
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• 2006

This study was progressed to value of Bi2212 tubes uniformity depend on cooling conditions. The tube from 150 mm in length, 30 mm in O.D., 20 mm in I.D., 5 mm in thickness was combined with electrodes by 3 sections. The tube from 60, 70 mm in length, 30, 50 mm in O.D., 20.4, 40.4 mm in I.D., 4.8 mm in thickness was in controled of cooling rate by a heat exchanger. Bi2212 tubes were fabricated by Centrifugal Forming Process (CFP) and they were annealed at $840^{\circ}C$ for 80 h in oxygen atmosphere. The tube from 150 mm in length was analyzed by EFDLab of NIKA to show cooling rate and temperature distributions. When the tube was cooled for 100s, the temperature distributions was $663^{\circ}C$ in the middle, $500{\sim}647^{\circ}C$ in inlet, $598{\sim}647^{\circ}C$ in the other side. Electric characteristics from $I_c$ was 450 A in the middle, 650 A in inlet, 600 A in the other side. Electric characteristics by a heat exchanger showed the more fast cooling rate, the more high $I_c$.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1804-1807
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• 2001

By comparing and analyzing the feature, brightness, chromaticity and uniformity of domestic LGPs and Japanese products, early home-manufacturing and stabilization in home-manufacturing are possible. By comparing and analyzing the distribution of brightness as sheets are varied, we can design an ideal sheet composition.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.71-74
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• 1996

The concept of uniformity in control implementation is exploded for improving efficiency of design procedure. A controller area operating system which includes real time kernel and control specific shell are developed. Three examples are discussed for the validation of tile system.