• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.636-639
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• 2000

Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.453-457
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• 2008

In this thesis, piezoelectric properties and sintering properties of PCW-PNN-PZT+0.5 wt%$MnO_2$ ceramics adding $B_2O_3$ after creating the specimens with a general method. The lattice constant from the analysis of crystal structure showed that the crystal structure of ceramic features both rhombohdral and tetragonal structures and that the pychlore structure was decreased with the increase of the sintering temperature. The electromechanical coupling coefficient showed its maximum of 31 % in the sintered specimens at $1050^{\circ}C$, and its minimum of 20 % in the sintered specimens at $1150^{\circ}C$. The mechanical quality coefficient marked the maximum of 139 at the sintering temperature of $1150^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.253-254
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• 2007

In this study, in order to develop low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were fabricated using $Li_2CO_3-Bi_2O_3$-CuO as sintering aids and their piezoelectric and dielectric characteristics were investigated as a function of heating rate. At sintering temperature of $900^{\circ}C$, with increasing heating rate, electromechanical coupling factor(kp), mechanical quality factor(Qm) and dielectric constant $({\varepsilon}_r)$ were increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.290-291
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• 2007

In this study, in order to develop the low temperature sintering multilayer piezoelectric actuator, PZW-PMN-PZT system ceramics were manufactured according to variation of sintering aids. At the sintering temperature of $900^{\circ}C$, $0.3wt%Li_2CO_3$, $0.2wt%Bi_2O_3$ and 0.2wt%CuO added specimen showed a maximum value of kp = 0.552, $d_{33}\;=\;344pC/N$ and Qm = 1320, respectively.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.571-575
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.214-215
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• 2005

In this paper, in order to develop low temperature sintering piezoelectric ceramics for piezoelectric transformer, PMW-PMN-PZT ceramics using 0.25wt%$CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were fabricated according to the variation of amount of PMW and Zr/Ti ratio. Specimens could be sintered at 900$^{\circ}C$ by adding sintering aids. As Zr/Ti ratio was increased, kp was increased and Qm was decreased by approaching MPB region, and kp showed the largest value of 0.58 at Zr/Ti:50/50. The variation of amount of PMN substitution affected the liquid phase sintering of the ceramics using sintering aids, and decreased piezoelectric properties.

• E2M - 전기 전자와 첨단 소재
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• 제1권3호
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• pp.251-260
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• 1988

n형 GaAs에 음성접촉을 형성함에 있어서 Au-Ge 공융합금을 용해시키는 alloying 보다는 sintering을 필요로 하는 Su-Pd-Ge계의 새로운 융성접촉을 도입하였다. Au-Pd-Ge계의 최적의 음성조건을 조사하기 위하여 Au/Pd/Ge, Au/Ge/Pd, Au/Pd/Ge/Pd 그리고 Au/Pd/Au/Ge 음성접촉을 제조하였다. 비접촉저항을 조사하는데 있어서 sintering 온도는 390-450.deg.C사이였고 시간은 30초에서 6분 사이였다. Au-Pd-Ge계의 비접촉저항은 alloying된 Au/Pd/Ge 접촉의 그것에 필적할 만큼 낮았으며 특히 Au/Ge/Pd 접촉은 430.deg.C, 3분의 sintering 조건에서 가장 낮은 1.2*$10^{-6}$.OMEGA..$cm^{2}$의 비접촉저항을 나타냈다. Au/Ge/Pd 접촉의 표면형상 및 접촉패턴 가장자리는 450.deg.C에서 2분 이상 sintering된 접촉을 제외하고는 sintering 후에 as-deposited 상태와 다를 바가 없었다. 430.deg.C, 3분 sintering에서 가장 낮은 비접촉저항을 나타낸 Au/Ge/Pd 접촉의 비접촉저항은 430.deg.C에서 Ge/Pd 두께 변화에 비교적 변화가 적었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.282-286
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• 2003

We investigated the effects of calcination temperature and sintering additives on the sintering behaviors and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$. Highly densified samples were obtained at the sintering temperatures below $1000^{\circ}C$ with additions of 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$. From the examination of the existing phases and microstructures before and after sintering of $(Zn_{0.8}Mg_{0.2})TiO_3$ system calcined at the various temperatures ranging from $800^{\circ}C$ to $1000^{\circ}C$, it was found that high $Q{\times}f_o$ values were obtained when unreacted or second phases in calcined body were reduced. When calcined at $1000^{\circ}C$ and sintered at $900^{\circ}C$, it consists of hexagonal as a main phase with uniform microstructure and exhibits $Q{\times}f_o$ value of 42,000 GHz and dielectric constant of 22.

• 한국재료학회지
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• 제17권10호
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• pp.526-531
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• 2007

The sintering behavior and electrical property of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the iron oxide concentration ranging from 0 to 5 mol%. Both the sintered density and grain size were found to increase up to 2 mol% $Fe_2O_3$, and then to decrease with further additions. At a higher $Fe_2O_3$ content above 3 mol%, grain size decreased by a pinning effect induced by different shape grains. The electrical conductivity was also increased with increasing $Fe_2O_3$ content up to 2 mol%. Total conductivity of 2 mol% $Fe_2O_3-added$ specimen showed the maximum conductivity of $2{\times}10^{-2}{\Omega}{\cdot}cm^{-1}$ at $500^{\circ}C$. The addition of $Fe_2O_3$ was found to promote the sintering properties and electrical conductivities of $Gd_2O_3-dope\;CeO_2$.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.662-666
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• 2006

Microstructure and electrical properties of ZnO varistors as a function of sintering temperature and times were investigated. Sintering temperature and times greatly affected electrical properties and Bi-rich liquid phase of the microstructure. The varistor which were sintered at $1125^{\circ}C\sim1150^{\circ}C$, for 2 hr exhibited the varistor voltage$(V_c)$, nonlinear coefficient $(V_{10mA}/V_{1mA})$, leakage current$(I_L)$ dielectric constant and dissipation factor as $225\sim250V/mm,\;0.89\sim0.92,\;0.8\sim1.1{\mu}A,\;720\sim740\;and\;1.8\sim2.0%$, respectively.