• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.321-324
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• 2003

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.

• 한국재료학회지
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• 제25권1호
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 2004

The microstructure, electrical, and clamping voltage characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1${\sim}$3 h. Increasing sintering time promoted the densification, in which the average grain size and density are increased in the range of $11.4{\sim}16.0{\mu}m$ and $5.34{\sim}5.54g/cm^3$, respectively. The nonlinear exponent decresed in the range of 60${\sim}$26 and the leakage current increased in the range of $1.3{\sim}10.7{\mu}A$ with increase of sintering time. The clamping voltage ratio was less than 2 for ratio surge current of 10 A over sintering times.

• 한국재료학회지
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• 제15권3호
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• pp.143-148
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• 2005

The microstructure, electrical properties, and clamping voltage characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3(ZPCCY)-based$ varistor ceramics sintered at $1350^{\circ}C$ were investigated as a function of sintering time from 1 to 3 h. With increasing sintering time, the average grain size and density increased in the range of $11.4\~16.0\;{\mu}m$ and $5.34\~5.54g/cm^3$, respectively, in accordance of increasing sintering time. The nonlinear exponent decreased in the range of $60\~26$ and the leakage current increased in the range of $1.3\~10.7\;{\mu}A$ with increasing sintering time. The clamping voltage ratio increased in the range $1.58\~1.65$ for ratio surge current of 10 A as the sintering time increased.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.408-411
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• 2004

The electrical stability against surge stress of ZPCCY-based varistors were investigated at different sintering times. Sintering time decreased the varistor voltage and nonlinear exponent from 279.6 to 179.1 and from 52.5 to 24.9, respectively. On the contrary, the leakage current and dielectric dissipation factor increased from 1.2 to 9.8 ${\mu}A$ and from 0.0461 to 0.0651 with increase of sintering time. For all varistors, the variation rates of V-I characteristic parameters against surge stress were affected in order of varistor voltage$\rightarrow$nonlnear exponent$\rightarrow$leakage current. On the whole, the electrical stability against surge stress increased with increasing sintering time. Conclusively, it is assumed that the varistor sintered for 2 h exhibited comparatively good characteristics, in view of overall characteristics.

• 한국세라믹학회지
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• 제25권6호
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• pp.645-654
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• 1988

The microstructure and electrical characteristics of ZnO-Bi2O3 ceramics containing 5mol% Bi2O3 have been studied in relation to sintering temperature and mode. The distribution and thickness of Bi2O3 intergranular layer was varied with sintering temperature and mode. Intergranular layer was more homogeneous with increasing sintering temperature, when sintering by direct heating and rapid cooling mode showed the best distribution of intergranular layer. These microstructural changes affected electrical characteristics directly, at 140$0^{\circ}C$ and C mode obtained high value of electrical resistivity and nonlinear exponent. Varistor voltage decreased with increasing sintering temperature, increased with decreasing holding time at high temperature. Barrier voltage obtained by calculation was about 1.5V.

• 한국세라믹학회지
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• 제43권9호
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• pp.558-563
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• 2006

The electrical and dielectric properties of $ZnO-Pr_6O_{11}CoO-Cr_2O_3La_2O_3-based$ nonlinear resistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{|circ}C$. As the sintering temperature increased, the breakdown voltage decreased from 777.9 to 108.0V/mm, the nonlinear coefficient greatly decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor density from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The dielectric dissipation factor increased from 0.0879 to 0.2839 for the increase of sintering temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.97-102
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• 2005

This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.117-120
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• 1999

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. The Gas of sintering process was oxygen, nitrogen, argon, air respectively. The microstructure of ZnO varistors be made use of SEM equipment. The condition of DC degradation tests were conducted at $115\pm2^{\circ}C$ for periods up to 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Resistance-frequency and capacitance-frequency analysis are accomplished to the understanding of electrical properties as DC degradation test. From above analysis, it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test.