• Transactions of the Society of Information Storage Systems
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• v.3 no.4
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• pp.160-166
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• 2007

In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.71-72
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• 2007

The insulation is a important part of cable. In thisb paper, measured the insulation resistance for analysing of change of insulation resistance by filler on low voltage multicore cables. The insulation resistance is not effected by only insulation material, but also filler material. The insulation resistance is different with measuring before filling and after filling by filler. When develope the new filler or cable, the volume resistance of filler must be considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.4
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• pp.386-390
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• 2005

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Electrical resistance change due to hydrogen absorption and desorption was measured by four point measurement method. The sample was activated by hydrogen absorption and desorption cycling at room temp. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temp. The resistance change ratio was decreased to 12 % with increasing hydrogen pressure in contrast to normal metal behavior. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Journal of Fashion Business
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• v.23 no.2
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• pp.1-17
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• 2019

The objective of this study was to investigate electrical conductivity of fabrics from polyester (PET) and Nylon (N) containing polyurethane (PU), with silver paste patterns screen-stenciled in three directions. The PET/PU and N/PU fabrics knitted or woven were uniaxially strain-recovered up to 22.5% in three times when each change in electrical resistance was simultaneously measured. This study established four variables that complexly affected electrical conductivity of these specimens; fabric structures, components, cover factors, and the percolation of silver particles. The woven or knitted fabric structures did not distinctively cause the changes in electrical resistance, however, the woven fabrics with the diagonal patterns showed their relatively high electrical resistance. The PET/PU fabrics with increasing the PET proportion generally presented the opposite propensity to its electrical conductivity. The changes in electric resistance of the PET/PU 85/15 2/1 twill and double plain fabrics instantaneously responded to the rate of elongation. The PET/PU group exhibited a reverse correlation between its cover factor and electrical resistivity. The highest electrical conductivity of the PET/PU 95/5 interlock fabric, with very few fluctuations, was attributed to the deep percolation of the silver particles that bridged the gaps between one loop and another. On the other hand, the occurrence of the silver cracks along with the elongated direction led to the immeasurably high change in electrical resistance as the strain increased.

• Journal of the Korean Society of Safety
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• v.38 no.1
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• pp.34-41
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• 2023

In this study, S food manufacturing business located in Chungbuk was selected as the subject, and the transition in insulation resistance in major electrical equipment used in this food manufacturing business was analyzed for 4 years (2018-2021). It was confirmed that the insulation resistance decreased over time for all 18 electrical facilities. Insulation resistance changed due to environmental influences such as load characteristics and ambient temperature. Particularly in the case of the food manufacturing industry, it was confirmed that the decrease started after 2 years, although it varied depending on equipment and environmental influences. Furthermore, it was confirmed that management through predicting the management cycle of electrical equipment is possible by deriving a regression equation through regression analysis of insulation resistance measurement values.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.403-406
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• 2019

We prepared yarned carbon nanotube (CNT) fibers from a CNT forest synthesized on a Si wafer by chemical vapor deposition (CVD). The yarned CNT fibers were thermally annealed to reduce their resistance by removing the amorphous carbonaceous impurities present in the fibers. The resistance of the yarned CNT fiber gradually decreased with an increase in the annealing temperature from $200^{\circ}C$ to $400^{\circ}C$ but increased again above $450^{\circ}C$. We carried out thermogravimetric analysis (TGA) to confirm the burning properties of the amorphous carbonaceous impurities and the crystalline CNTs present in the fibers. The pattern of the mass change of the sample CNT fibers was very similar to that of the resistance change. We conclude that CNT fibers should be thermally annealed at temperatures below $400^{\circ}C$ for reducing and stabilizing their resistance.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.288-292
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• 2006

Usually, equations that calculate ground resistance of earth electrode was already informed well by form of earth electrode. But, when apply on the spot because general expressions are very insufficient at point that calculate exact ground resistance value by variation of earth electrode, and constant value that corrective coefficient for ground resistance calculation is fixed regardless of change of the earth resistivity specially is presented, it is actuality that difficulty is. Therefore, in this study, about these problem, proposed corrective coefficient for calculation of ground resistance according to change of the earth resistivity.