• 제목/요약/키워드: Electrical recording

검색결과 350건 처리시간 0.029초

다채널기록법을 이용한 토끼 망막 신경절세포의 특성 분석 (Characterization of Rabbit Retinal Ganglion Cells with Multichannel Recording)

  • 조현숙;진계환;구용숙
    • 한국의학물리학회지:의학물리
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    • 제15권4호
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    • pp.228-236
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    • 2004
  • 망막의 신경절세포는 눈에 가해진 시각 정보를 흥분파의 형태로 변환하여 시신경을 통하여 대뇌의 시각피질까지 전달한다. 과거에 사용하여 왔던 방법은 단일 전극을 단일 뉴론의 세포내, 외에 삽입함으로써 특정 시간대에 특정 뉴론만을 기록하는 방법이었으므로 신경망 전체를 통하여 처리되어 나오는 정보를 알아보기에는 적합하지 않다. 다행히 최근에 다채널 전극을 사용하여 여러 신경세포에서 나오는 신호를 동시에 기록할 수 있는 다채널기록법(multichannel recording) 이 개발되었으므로 본 연구에서는 8행 ${\times}$ 8열의 다채널전극을 사용한 다채널기록법을 이용하여 망막신경절세포 군집의 흥분파를 기록, 분석함으로써 단일 신경세포가 아닌 망막 신경망을 거쳐 최종적으로 나오는 신호에 대해서 연구하였다. 전극에 부착된 망막 절편에 2초 동안 빛을 가하고 5초 동안 빛이 차단되는 자극을 반복적으로 인가한 후, PSTH 분석방법으로 망막 신경절세포를 ON 세포, OFF세포, ON/OFF세포의 세가지 유형으로 분류할 수 있었으며, ON 세포: 35.0$\pm$4.4%, OFF 세포: 30.4$\pm$1.9%, ON/OFF 세포: 34.6$\pm$5.3% (전체 망막절편수=8)로 분포되어 있음을 확인하였다. 또한 상호상관(Cross-Correlation) 분석방법을 통해서 인접한 세포들끼리 매우 짧은 시간대에(<1 ms) 동기화된 흥분을 발사함을 확인할 수 있었고, 동기화된 흥분은 6~8개의 세포로 구성된 세포 클러스터에서 일어남을 확인하였다. 즉 개개의 신경절세포들이 빛 자극을 처리함에 있어 독립적으로 작용한다는 기존의 가정과는 달리 인접한 세포끼리는 동기화된 흥분을 보이는 것을 확인하였으며, 이러한 방식은 시세포 수와 신경절세포 수의 불균형으로 인해 초래되는 병목현상을 완화할 수 있는 효과적인 기전으로 생각된다.

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Simulation of the Effect of Soft Underlayer Domain Wall Structure on Output Signal in Perpendicular Magnetic Recording

  • Kim, Eun-Sik;Lim, Chee-Kheng;Kim, Yong-Su;Lee, Ju
    • Journal of Magnetics
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    • 제11권2호
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    • pp.83-86
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    • 2006
  • Controlling magnetic domains in soft underlayer (SUL) of perpendicular magnetic recording (PMR) is an important issue for the application of PMR in HDD. We studied the magnetic domain structures in SUL using the finite element based micromagnetic simulation (FEMM) for the SUL models with different thicknesses. The purpose is to simulate the magnetic domain wall noise when the SUL thickness and saturation magnetization are changed. The simulation results show that a 15 nm SUL forms simpler Neel wall domain wall pattern and 40 nm SUL forms complex Bloch wall. To visualize the effect of these domain walls stray field at a read sensor position, the magnetic stray field of the domain walls at air bearing surface (ABS) which is 50 nm above the SUL was simulated and the results imply that Bloch walls have stronger stray field with more complicated field patterns than Neel walls and this becomes a significant noise source. Therefore, the thickness of the SUL should be controlled to avoid the formation of Bloch walls.

통합영상정보 생성을 활용한 교차로 영상기록장치 시스템 구현에 관한 연구 (A Study on Implementation of Video Recording System utilizing Unified and integrated information for intersection)

  • 임필섭;임요웅;김천석
    • 한국전자통신학회논문지
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    • 제11권8호
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    • pp.783-792
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    • 2016
  • 본 논문은 교차로 영상기록장치 시스템으로서 교차로 구간 영상과 신호등 현시 영상을 수집하여 하나의 영상정보로 통합한 후 중앙센터로 전송하는 시스템이다. 시스템은 교차로 영상과 신호등 현시 영상을 획득하는 영상 획득 과정과 획득한 두 영상을 단일의 영상으로 통합하는 과정을 거쳐 중앙센터로 전송하고 기록하도록 구성되어 있다. 이 시스템을 활용하여 사고 발생시 유고정보를 신속히 전파하여 2차 사고를 예방하고 사고의 원인을 판단하는데 소요되는 시간과 분쟁을 줄일 수 있을 것으로 기대된다.

Responses of Inferior Olive Neurons to Stimulation of Semicircular Canals

  • Park, Sah-Hoon;Park, Jong-Seong;Lee, Min-Su;Shin, Jung-Woo
    • The Korean Journal of Physiology and Pharmacology
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    • 제6권4호
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    • pp.193-197
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    • 2002
  • In spite of abundant anatomical evidences for the fiber connection between vestibular nuclei and inferior olivary (IO) complex, the transmission of vestibular information through the vestibulo- olivo-cerebellar climbing fiber pathway has not been physiologically established. The aims of the present study were to investigate whether there are IO neurons specifically responding to horizontal rotation and also in which subregions of IO complex these vestibularly-activated neurons are located. The extracellular recording was made in 68 IO neurons and responses of 46 vestibularly-activated cells were analyzed. Most of the vestibularly-activated IO neurons responded to signals of vertical rotation (roll), while a small number (13/46) of recorded cells were activated by horizontal canal signal (yaw). Regardless of yaw-sensitive or roll-sensitive, vestibular IO neurons were excited, when the animal was rotated to the side contralateral to the recording side. The gain and excitation phase were very similar to otolithic or vertical-canal responses. Histologic identification of recording sites showed that most of vestibular IO neurons were located in ${\beta}$ subnucleus. Electrical stimulation of a HSC evoked an inhibitory effect on the excitability of the ipsilateral IO neurons. These results suggest that IO neurons mainly in the ${\beta}$ subnucleus receive vestibular signals from semicircular canals and otolithic organs, encode them, and transmit vestibular information to the cerebellum.

CoCr 박막의 결정성에 미치는 두께 및 하지층의 영향 (The Effect of Thickness and Underlayer on Crystallographic Properties of Co-Cr Thin Films)

  • 최성민;김재환;금민종;김경환;중천무수;직강정언
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1447-1449
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    • 1998
  • The c-axis orientation plays a very important role in controlling the main parameters of the perpendicular magnetic recording media, such as perepndicular magnetic anisotropy field $H_{K{\bot}}$, the ratio of coercive force $H_{C{\bot}}/H_{C//}$, the recording density $D_{50}$, and the dispersion of the c-axis orientation $\Delta\theta_{50}$, which is quite important for the performance as perpendicular recording media, as well as the magnetic properties of the film. In this study, the essential process requirement for preparing the Co-Cr films with the superior c-axis orientation, the dependence of $\Delta\theta_{50}$ and the magnetic properties on the film thickness $\delta$, and the effect of underlayer on the dispersion of c-axis orientation have been investigated for both the FTS and DCM system.

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두께에 따른 비정질 칼코게나이드 $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 홀로그래피 데이터 격자형성 (The Formation of Holographic Data Grating on Amorphous Chalcogenide $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ Thin Films with Various Thickness)

  • 여철호;정홍배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권8호
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    • pp.387-391
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    • 2006
  • The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

$Te_x(Sb_{85}Ge_{15})_{100-x}$ 상변화 광기록 박막의 결정화 특성 (Crystallization Properites of $Te_x(Sb_{85}Ge_{15})_{100-x}$ Thin Film as Phase Change Optical Recording Media)

  • 김홍석;이현용;정홍배
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.314-320
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    • 1998
  • In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.

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확장성표기언어(XML) 기반의 원격제어규약 표준 (XML Based Standard Protocol for Remote Control)

  • 최중인
    • 대한전기학회논문지:시스템및제어부문D
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    • 제55권5호
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    • pp.216-219
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    • 2006
  • This paper presents an XML based standard specification of remote control protocol for home appliances. In the framework level, the XML protocol provides a useful bridge between services and platforms. The proposed protocol has been implemented into a personal video recorder for remote recording service. The results imply the potential of global standards for remote control by its minimum overhead in network and processor. The proposed XML is designated RCXML in this paper.

단결정 태양전지의 시정수

  • 정유라;최용성;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.11-11
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    • 2010
  • Recently, annual usage of energy is dramatically increasing by industrialization is going faster and more electricity is needed due to various electronic devices. This paper present relationships between the Vmax, $V_T$, load and time constant of solar cell charge and discharge curve. Charging and discharging recording where the external resistance will become larger Vmax, $V_T$ is decrease and the time increases and decreases there is a possibility of knowing.

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