• ETRI Journal
• /
• v.35 no.4
• /
• pp.638-643
• /
• 2013

This paper presents a 5-bit digital step attenuator (DSA) using a commercial 0.18-${\mu}m$ silicon-on-insulator (SOI) process for the wideband phased array antenna. Both low insertion loss and low root mean square (RMS) phase error and amplitude error are achieved employing two attenuation topologies of the switched path attenuator and the switched T-type attenuator. The attenuation coverage of 31 dB with a least significant bit of 1 dB is achieved at DC to 20 GHz. The RMS phase error and amplitude error are less than $2.5^{\circ}$ and less than 0.5 dB, respectively. The measured insertion loss of the reference state is less than 5.5 dB at 10 GHz. The input return loss and output return loss are each less than 12 dB at DC to 20 GHz. The current consumption is nearly zero with a voltage supply of 1.8 V. The chip size is $0.93mm{\times}0.68mm$, including pads. To the best of the authors' knowledge, this is the first demonstration of a low phase error DC-to-20-GHz SOI DSA.

• Journal of Hydrogen and New Energy
• /
• v.3 no.2
• /
• pp.17-24
• /
• 1992

Hydrogen gas sensors were fabricated after the form of metal/insulator/semiconductor(MIS) structure on a p-type silicon wafer and a insulating layer (silicon dioxide) thickness was changed from $500{\AA}$ to $5000{\AA}$. Their electrical properties were investigated with the variation of the hydrogen gas concentration at room temperature. At the applied forward bias of lV to both ends of Pd-MIS sensors the current was decreased logarithmically with the increase of hydrogen concentration in air. In the case of a thin $SiO_2$ layered ($500{\AA}$) sensor the current ratio was decreased to 25 % at 1 % of hydrogen concentration in air and 50% for a thick $SiO_2$ layered ($5000{\AA}$) sensor. And the response time of the thick insulating layered sensor to 1% hydrogen containing air was about 50 seconds and regeneration time was 2.5 minutes. When a 0.5mA current was appied to the thick insulating layered sensor the maximun voltage shift was calculated to 0.8V in the case of ${\theta}$ = 1 and the Pd surface coverage of hydrogen was increased logarithmically with hydrogen partial pressure.

• Journal of the Korean Ceramic Society
• /
• v.52 no.5
• /
• pp.361-365
• /
• 2015

Vanadium dioxide ($VO_2$) of monoclinic phase exhibits Metal Insulator Phase Transition (MIPT) phenomenon involving a sharp change in electrical and optical properties at $68^{\circ}C$. Solution-based process is applied to form uniform $VO_2$ coating layer on ceramic tiles. This can selectively block the near-infrared light to possibly reduce the energy loss and prevent dew condensation caused by the temperature difference. Heat treatment conditions including temperature and dwell time were examined to obtain a monoclinic $VO_2$ single phase. Both rutile and monoclinic $VO_2$ phases were observed from in the tiles post-annealed below $700^{\circ}C$. Desired monoclinic $VO_2$ single phase was grown in the tiles heat treated at $750^{\circ}C$. Nano facets of irregular size were observed in the monoclinic $VO_2$ phase involving the phase-transition. Grain growth of monoclinic $VO_2$ phase was observed as a function of dwell time at $750^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2007.04b
• /
• pp.143-145
• /
• 2007

화력발전소 S/Y(switchyard)의 362 kV GIS에 대한 부분방전 정밀측정을 수행하였다. 2005년 부터 화력발전소 S/Y GIS의 고장예방을 위해 설치 운전승인 UHF 부분방전 상시감시시스템에서 상당히 큰 부분 방전신호가 지속적으로 감지되었다. 상시감시시스템에서 방전신호의 원인을 부유전극으로 추정하였으며, 이에 해당 사업소에서 감지된 방전신호의 노이즈 여부 및 방전 발생위치 추정을 위한 기술지원을 요청하였다. 이에 따라 전력연구원은 방전신호를 정밀 측정한 후 PRPD(phase resolved partial discharge) 분석을 통해 부유전극이 GIS 내부에 존재함을 확인하였으며, TOA(time of arrival)법에 의해 제 1 발전기 step-up 변압기부터 인근 가스절연모선 사이에 결함이 존재하는 것으로 추정하였다. 전력연구원의 측정결과를 바탕으로 발전소측에서 해당 개소를 분해 점검한 결과 가스절연모선의 중앙도체를 지지하는 supporting insulator 금구류의 접촉불량에 의한 부유전극 결함을 발견하고 보수하였다. 보수후 상시감시시스템에서 방전신호가 검출되지 않음에 따라 방전원인이 제거되었음을 확인하였다.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.200-202
• /
• 2004

Characteristics of the break down current of HTS tape with different insulator are described. The various insulators are utilized for enduring the high voltage in superconducting power devices. The break down current of HTS tape largely depends on insulators wound round HTS tape. In this research, The break down currents of Bi-2223 tape, which is widely used for superconducting power devices are tested and discussed. It is expected that results from this study can be utilized as basic data in designing superconducting power devices.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1794-1796
• /
• 2003

한국전기연구원(전기연)은 애자장치 및 절연물의 파워 아크시험을 수행하고 있으나, 실 사용상태를 모의할 수 있는 시험회로, 애자장치의 설치방법, 아크방전전류의 크기 및 평가방법 등이 미비한 상태에서 절연물의 연면에 적정한 아크에너지를 공급하지 못한 상태로 시험을 수행하고 있다. 국내 외 시험규격에서도 파워아크 발생 경로가 적절치 못하여 절연물과 금구류의 열적 전기적 손상 정도가 실 사용상태에 미치지 못하고 있다. 본 연구에서는 이의 개선을 위하여, 시험법에 대한 (1) 아크방전의 기술적 근거를 마련하고, (2) 성능검증 회로와 애장장치의 아크유기에 대한 기술적 근거, (3) 아크방전전류의 크기 및 평가방법 등을 고찰한다. 본 연구에서 검토한 성능검증방법은 교류 1kV 이상의 세라믹, 자기재 및 복합절연물의 파워 아크시험에 적용 가능하다.

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3313-3315
• /
• 1999

Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera respectively. A bond characteristic on the interface was analyzed by using IT- IR. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si $OH{\cdots}(HOH{\cdots}HOH{\cdots}HOH){\cdots}OH-Si$. The bond strength depends on the HF pre-treatment condition before pre- bonding (Min:$2.4kgf/crn^2{\sim}Max:14.9kgf/crn^2$)

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.2040-2041
• /
• 2007

In this paper, the UHF PD(Partial Discharge) sensors for $SF_6$ insulated MV $SF_6$ switchgear have been proposed and related investigations have been performed in order to detect the PD which were produced inside the MV $SF_6$ switchgear. Firstly, the internal type UHF PD sensor based on spiral antenna theory has been developed. This type sensor is highly sensitive and has lowly effect on by on-site noise. Secondly, the external type UHF PD sensor was developed based on log periodic antenna concept. This type sensor is removable and detectable for operating switchgear. These sensors were designed and simulated using RF simulation tool. In order to verify the sensitivity of these sensors, we performed the on-site test using the mock-up switchgears including the artificial defects which were the protrusion on high voltage conductor, free moving metal particle and surface defect on insulator. These mock-up switchgear were installed on the test distribution line.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.107-108
• /
• 2007

Overhead transmission lines are completely exposed to the environment. This causes faults in transmission lines due to natural environmental conditions. In some cases, transmission towers are damaged by typhoons and snow, as well as sleet on the transmission lines. It takes a lot of time to repair the damaged towers. For emergency restoration purposes, steel poles are installed to temporarily supply power. Before 2003, emergency restoration steel poles were made of angled steel, which required a large number of beams, bolts, etc. In addition, the foundation of the steel pole and ground wire was constructed using excavation and burial methods, therefore it required a lot of manpower and time to construct temporary transmission lines. In September 2003, typhoon Maemi, whose maximum wind speed was 60m/s, hit Korea. 'Maemi' destroyed transmission lines in the Busan and Geojea area, causing long blackouts. To reduce the recovery time to the damaged transmission lines, self-build based emergency towers were developed. self-build based emergency towers reduced recovery time from 24 hours to 4 hours or less. However, the self-build based emergency tower had no arms, so the temporary transmission lines could only be constructed without curves in line routes. In this paper, solving these self-build based emergency tower limitations, using insulated arms(designed for use with the self-build based emergency tower), shall be explained.

• Korean Journal of Materials Research
• /
• v.15 no.9
• /
• pp.613-619
• /
• 2005

The ever increasing popularity and acceptance in the market place of portable systems, such as cell phones, PDA, notebook PC, etc., are fueling effects in further miniaturizing and lowering power consumption in these systems. The dynamic power consumption due to the CPU activities and the static power consumption due to leakage currents are two major sources of power consumption. Smaller devices and a lower de voltage lead to reducing the power requirement, while better insulation and isolation of devices lead to reducing leakage currents. All these can be harnessed in the SOI (silicon-on-insulator) technology. In this study, the key aspects of the SOI technology, mainly device electrical properties and device processing steps, are briefly reviewed. The interesting materials issues, such as SOI structure formation and SOI wafer fabrication methods, are then surveyed. In particular, the recent technological innovations in two major SOI wafer fabrication methods, namely wafer bonding and SIMOX, are explored and compared in depth. The results of the study are nixed in that, although the quality of the SOI structures has shown great improvements, the processing steps are still found to be too complex. Between the two methods, no clear winner has yet emerged in terms of the product quality and cost considerations.