• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.263-263
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• 2008

This paper describes the electrical strength of a toughened glass stem insulators employed for electric railways. The broken glass stem insulators for comparison were taken at site. According to the international standards, electrical strength tests with 60[Hz] voltage and with impulse voltage were carried out to them under dry and wet condition and the results were corrected by considering the temperature and humidity factors. Based on the experimental results, the electrical strength of broken glass stem insulators was compared with those of sound ones and surface flashover characteristics were also discussed. As a result, it was confirmed that the electrical discharge is formed by bridging each end of the insulator shell. The experimental results are expected to be utilized as data for electrically identifying the failure causes of glass insulators.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.190.1-190
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• 2000

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1503-1511
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• 2013

This paper deals with the analysis of leakage current characteristics of silicone rubber insulator in order to develop a new condition monitoring tool to identify the flashover of outdoor insulators. In this work, laboratory based pollution performance tests are carried out on silicone rubber insulator under ac voltage at different pollution levels and relative humidity conditions with sodium chloride (NaCl) as a contaminant. Min-Norm spectral analysis is adopted to calculate the higher order harmonics and Signal Noise Ratio (SNR). Choi-Williams Distribution (CWD) function is employed to understand the time frequency characteristics of the leakage current signal. Reported results on silicone rubber insulators show that the flashover development process of outdoor polymer insulators could be identified from the higher order harmonics and signal noise ratio values of leakage current signals.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1146-1149
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• 2006

In this study, nanocomposite layer composed of PMMA-co-MMA and $TiO_2$ was prepared by sol-gel process using TTIP as a precursor and was utilized as a gate insulator of OTFTs. The composite insulator provides the lower threshold voltage and the enhanced sub threshold slope of OTFTs mainly due to its higher dielectric constant than that of the bare PMMA-co-MMA. Consequently, it is demonstrated that the sol-gel process can open an interesting direction for the fabrication of high-performance OTFTs, and contribute for OTFTs to be feasible for real applications.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.187-189
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• 1997

Thermal and electrical breakdown phenomena in XLPE insulator of power cable were investigated. At high temperature the polymeric insulator was thermally deteriorated. Under the magnified high electric field, electrical tree was initiated at the sharp tip of needle electrode which was inserted to simulate the defects and impurities such as void, crack, metallic particles, dusts, and so on.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.717-720
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulators have been studied. For the surface treatment, the simple rubbing technique was used. The field effect mobilities of the devices with PVP gate insulator was improved about four times as high as those of TFTs without the insulator surface treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1121-1124
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• 2004

Aging test to estimate life property of polymer insulator is executed through several international standard such as IEC 61109 and CEA tracking wheel test, but is not getting clear conclusion yet. There are two methods in the diagnosis method of polymer insulator such as off-line and on-line. The diagnosis methods in off-line are external condition analysis by the eye, contaminant analysis on surface, surface analysis, pollution withstand voltage test, power frequency flashover voltage test, lightning impulse flashover test, tensile fracture load test and flexural load test. The diagnosis methods in off-line most are the method for virgin and last aged sample. However, the diagnosis method in on-line is method that can be evaluate sample state as progressing continuously aging test in beginning, The diagnosis method in on-line is arranged as following: leakage current measurement, electric field, surface state investigation, thermal image, emitting light measurement and then so. In this paper, the tracking performance of polymer insulator with salt solution which is added surface active agent. The diagnosis of insulator sample has been analyzed by leakage current and visual examination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.475-476
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• 2008

This paper is an experimental test for the close examination of breakdown causes of glass insulators using at the electric rail-road. The glass insulator is estimated the mechanical performance according to hitting test(ST-100, Sharp-Eng, KOR) that is based on KSC 3810. Insulators is damaged by pendulum weight at the steps of hitting angles. Glass and porcelain insulators are broken at the hitting angle of $72^{\circ}$. From the these results, glass insulator absorbed the impact from the pendulum weight but on the porcelain insulator, it is not transmitted vibration by impact. Hereafter, these results are expected that is used the data for the assessment on breakdown cause of a glass insulator.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.