• Carbon letters
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• v.13 no.2
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• pp.126-129
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• 2012

Nanocomposite films were made by a simple solution casting method in which multi-walled carbon nanotubes (MWCNT) and magnetite nanoparticles ($Fe_3O_4$) were used as dopant materials to enhance the electrical conductivity of chitosan nanocomposite films. The films contained fixed CNT concentrations (5, 8, and 10 wt%) and varying $Fe_3O_4$ content. It was determined that a 1:1 ratio of CNT to $Fe_3O_4$ provided optimal conductivity according to dopant material loading. X-ray diffraction patterns for the nanocomposite films, were determined to investigate their chemical and phase composition, revealed that nanoparticle agglomeration occurred at high $Fe_3O_4$ loadings, which hindered the synergistic effect of the doping materials on the conductivity of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• The Journal of Natural Sciences
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• v.13 no.1
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• pp.51-63
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• 2003

The investigation of the electrical conductivities donor doped $BaTiO_3$at isothermal temperature 700K and 1200K as a function of the oxygen partial press between I and $10^{-20}$atm yields evidence concerning the kind of defects. The position of the minimum conductivity is moved in some orders of magnitude with increasing of donor contents when comparing that of the pure $BaTiO_3$. The conductivity for all the samples with various concentration of donor blends into a same value and the conduction properties become independent of donor contents at very oxygen pratial pressure. This indicates that the reduction has become the major source of defects.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2202-2207
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• 2007

The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.506-509
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• 2003

In this paper, the $\Phi$-q-n pattern and average discharge power of silicone rubber have investigated effect of inter impurities. It's changed impurities by silicone oil, water and copper. Applied voltage is AC 3, 4, 4.5, 5, 5.5[kV]. And data acquisition time is 10 second(600 cycles). These results suggest that partial discharge(PD) is shower negative polar than positive polar at 3[kV]. Positive polar's PD value increased with increase of applied voltage. The Conductivities expressed same $\Phi$-q-n pattern in positive polar and negative polar at phase region.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.82-91
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• 2017

Liquid alloy systems have a high degree of thermal conductivity, far superior to ordinary nonmetallic liquids and inherent high densities and electrical conductivities. This results in the use of these materials for specific heat conducting and dissipation applications for the nuclear and space sectors. Uniquely, they can be used to conduct heat and electricity between nonmetallic and metallic surfaces. The motion of liquid metals in strong magnetic fields generally induces electric currents, which, while interacting with the magnetic field, produce electromagnetic forces. Electromagnetic pumps exploit the fact that liquid metals are conducting fluids capable of carrying currents, which is a source of electromagnetic fields useful for pumping and diagnostics. The coupling between the electromagnetics and thermo-fluid mechanical phenomena and the determination of its geometry and electrical configuration, gives rise to complex engineering magnetohydrodynamics problems. The development of tools to model, characterize, design, and build liquid metal thermomagnetic systems for space, nuclear, and industrial applications are of primordial importance and represent a cross-cutting technology that can provide unique design and development capabilities as well as a better understanding of the physics behind the magneto-hydrodynamics of liquid metals. First studies for the development of computational tools for the design of liquid metal electromagnetic pumps are discussed.

• Carbon letters
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• v.15 no.4
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• pp.255-261
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• 2014

Multi-walled carbon nanotube reinforced epoxy composites were fabricated using shear mixing and sonication. The mechanical, viscoelastic, thermal, and electrical properties of the fabricated specimens were measured and evaluated. From the images and the results of the measurements of tensile strengths, the specimens having 0.6 wt% nanotube content showed better dispersion and higher strength than those of the other specimens. The Young's moduli of the specimens increased as the nanotube filler content was increased in the matrix. As the concentrations of nanotubes filler were increased in the composite specimens, their storage and loss moduli also tended to increase. The specimen having a nanotube filler content of 0.6 wt% showed higher thermal conductivity than that of the other specimens. On the other hand, in the measurement of thermal expansion, specimens having 0.4 and 0.6 wt% filler contents showed a lower value than that of the other specimens. The electrical conductivities also increased with increasing content of nanotube filler. Based on the measured and evaluated properties of the composites, it is believed that the simple and efficient fabrication process used in this study was sufficient to obtain improved properties in the specimens.

• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.