• 한국세라믹학회지
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• 제49권5호
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• pp.404-411
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• 2012

The reliability of solid oxide fuel cells (SOFCs) particularly depends on the high quality of solid oxide electrolytes. The application of thinner electrolytes and multi electrolyte layers requires a more reliable characterization method. Most of the investigations on thin film solid electrolytes have been made for the parallel transport along the interface, which is not however directly related to the fuel cell performance of those electrolytes. In this work an array of ion-blocking metallic Ti/Au microelectrodes with about a $160{\mu}m$ diameter was applied on top of an ultrathin ($1{\mu}m$) yttria-stabilized-zirconia/gadolinium-doped-ceria (YSZ/GDC) heterolayer solid electrolyte in a micro-SOFC prepared by PLD as well as an 8-${\mu}m$ thick YSZ layer by screen printing, to study the transport characteristics in the perpendicular direction relevant for fuel cell operation. While the capacitance variation in the electrode area supported the working principle of the measurement technique, other local variations could be related to the quality of the electrolyte layers and deposited electrode points. While the small electrode size and low temperature measurements increaseed the electrolyte resistances enough for the reliable estimation, the impedance spectra appeared to consist of only a large electrode polarization. Modulus representation distinguished two high frequency responses with resistance magnitude differing by orders of magnitude, which can be ascribed to the gadolinium-doped ceria buffer electrolyte layer with a 200 nm thickness and yttria-stabilized zirconia layer of about $1{\mu}m$. The major impedance response was attributed to the resistance due to electron hole conduction in GDC due to the ion-blocking top electrodes with activation energy of 0.7 eV. The respective conductivity values were obtained by model analysis using empirical Havriliak-Negami elements and by temperature adjustments with respect to the conductivity of the YSZ layers.

• 한국재료학회지
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• 제10권3호
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• pp.246-252
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• 2000

기계적 합금화 공정을 이용하여 제조한 $Bi_2(Te_{0.85}Se_{0.15})_3$ 가압소결체의 가압소결온도에 따른 열전특성을 분석하였다. $Bi_2(Te_{0.85}Se_{0.15})_3$ 가압소결체는 $300^{\circ}C$에서 $550^{\circ}C$ 범위의 가압소결온도에 무관하게 n형 전도를 나타내었다. $Bi_2(Te_{0.85}Se_{0.15})$ 합금분말을 (50% $H_2+50%$ Ar) 분위기에서 환원처리시, 분말 표면의 산화층 제거 및 과잉 Te 공격자의 소멸에 기인한 전자 농도의 감소로 가압소결체의 Seebeck 계수가 양의 값으로 변화하였다. $450^{\circ}C$ 이상의 온도에서 가압소결시 가압소결온도의 증가에 따라 $Bi_2(Te_{0.85}Se_{0.15})$ 합금의 성능지수가 증가하였으며, $550^{\circ}C$에서 가압소결시 $1.92{\times}10^{-3}/K$의 최대성능지수를 얻을 수 있었다.

• 한국재료학회지
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• 제20권4호
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.117.2-117.2
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• 2011

Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline TiO2 electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• 전자공학회논문지SC
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• 제43권1호
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• pp.45-52
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• 2006

본 논문에서는 새로운 무손실 스너버 회로를 설계하여 적용한 PWM-PFC 스텝-업 컨버터에 대해 제안한다. 제안된 컨버터는 전류불연속 제어모드에 의해 제어회로 구성이 간단하고 회로 구성소자의 용량을 줄일 수 있다. 또한 입력전류는 스위치의 듀티율 일정제어에 의한 교류 입력전압의 크기에 비례한 불연속적인 펄스열의 정현파상으로 된다. 그 결과 입력역률은 거의 단위역률로 주어지고 듀티율 일정제어에 의해서 제안된 컨버터는 제어기법이 간단하게 된다. 일반적으로 입력전류 불연속제어에 의한 컨버터의 경우, 사용된 스위치의 턴-온 동작은 영전류 스위칭으로 되는 장점이 있지만, 스위치의 턴-오프 동작은 최대 전류에서 스위칭되어 스위칭 손실을 증대시키고 스위치의 과중한 스트레스를 가져오게 된다. 이것은 컨버터의 효율을 저하 시키는 요인이다. 본 논문에서는 부분공진 회로로 동작되는 새로운 무손실 스너버 회로를 설계하여 스위치들의 턴-온, 턴-오프 동작을 소프트 스위칭으로 만들어 컨버터의 효율을 더욱 증대시킨다 제안된 PWM-PFC 스텝-업 컨버터는 컴퓨터 시뮬레이션과 실험을 통하여 그 타당성이 입증된다.

• 대한화학회지
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• 제31권5호
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• pp.389-394
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• 1987

CeO$_2$의 전기전도도를 300 ~ 1000${\circ}$C의 온도범위와 10$^{-5}$~ 10$^{-1}$ atm의 산소압력하에서 측정하였다. 전기전도도의 온도의존성과 산소압력 의존성을 측정하여 본 시료의 결합구조와 전기전도 메카니즘을 연구하였으며, 본 실험결과는 300 ~ 600${\circ}$C, 600 ~ 1000${\circ}$C의 두 온도영역에서 나누어 설명하였다. 각 산소 압력하에서 log ${\sigma}$ vs. 1/T의 도시로부터 얻어진 활성화에너지는 높은 온도영역에서 2.16 eV이었다. 또한 전기전도도의 산소압력의존성은 높은 온도영역에서 ${\sigma}$ ${\alpha}$PO$_2^{-1/4}$, 낮은 온도영역에서 ${\sigma}$ ${\alpha}$PO$_2^{-1/6.2}$로 각각 나타났다. 이 시료에 있어서의 주 결함은 높은 온도영역에 대하여 Ce$^{3{\cdot}}$interstitial이며, 낮은 온도영역에서는 oxygen vacancy model로 사료된다. 전기전도도의 온도 및 산소압력의존성을 고찰하였고 전기전도 메카니즘을 제시하였다.

• 한국정보통신학회논문지
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• 제20권8호
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• pp.1587-1595
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• 2016

P파는 심장의 전기적, 생리적 특성을 나타내는 파라미터로써 심방성 부정맥 진단에 있어 매우 중요하다. 하지만 R파에 비해 신호의 크기가 작고 그 형태가 다양하여 검출에 많은 어려움이 있다. P 파를 검출하기 위한 기존 연구방법으로는 주파수 분석과 비선형 접근방법 등이 제안되어 왔지만 방실 차단과 같은 전도 이상이나 심방성 부정맥의 경우에는 검출 정확도가 낮아진다. 이는 심장 상태에 따라 다양한 모양의 P파의 패턴이 존재하기 때문이다. 본 연구에서는 QRS 피크 변화에 따른 P파의 패턴을 분류하고 적응형 문턱치를 이용하여 P파를 검출하는 방법을 제안한다. 이를 위해 전처리를 통해 잡음이 제거된 심전도 신호에서 Q, R, S를 검출한다. 이후 피크 변화에 따른 P파의 3가지 패턴을 분류하고 적응형 윈도우와 문턱치를 통해 P파를 검출하였다. 제안한 방법의 우수성을 입증하기 위해 MIT-BIH 부정맥 데이터베이스 48개의 레코드를 대상으로 한 P파의 평균 검출율은 92.60%의 성능을 나타내었다.

• 한국재료학회지
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• 제9권5호
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• 전기화학회지
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• 제5권2호
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• pp.52-56
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• 2002

졸-겔법을 이용하여 주석산화물을 흑연입자 표면에 도포하고 $400-600^{\circ}C$에서 열처리하여 미세결정구조를 갖는 리튬이온 전지용 주석산화물 전극을 제조하였다. 도포 된 주석산화물의 양은 $2.25 wt\%\~11.1 wt\%$로 조절하여 실험한 결과 주석산 화물의 함량에 따라 방전용량이 증가하고 또한 초기의 비가역 용랑도 증가함을 알 수 있었다. 싸이클에 따른 주석 산화물 전극의 방전용량은 propylene carbonate(PC) 계 전해액에서도 초기 싸이클에서 350mAh/g 이상, 30 싸이클 후 에서는 300mAh/g을 나타낸 반면, 표면개질이 되지 않은 흑연전극의 경우에는 140mAh/g의 방전용량을 나타내었다. 충방전 속도를 C/5에서 C/2로 빠르게 했을 때 주석산화물 전극과 흑연전극의 방전용량은 초기 용량의 $92\%,\;77\%$로 각각 나타났다. 이러한 전극 특성의 향상은 주석산화물이 리튬이온과 반응하여 형성된 리튬 옥사이드$(Li_2O)$부동태 피막이 흑연전극의 탈리 현상을 막고 또한 환원된 주석이 흑연입자간의 전기전도를 원활하게 하여 전극의 전류분포를 향상시키기 때문인 것으로 해석되었다.