• Title/Summary/Keyword: Electrical conduction

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Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

  • Bouchefra, Yasmina;Sari, Nasr-Eddine Chabane
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.1
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    • pp.7-12
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    • 2017
  • This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

Effects of Low Temperature Annealing at Various Atmospheres and Substrate Surface Morphology on the Characteristics of the Amorphous $Ta_2O_5$ Thin Film Capacitors (여러 분위기에서의 저온 열처리와 폴리머 기판의 표면 morphology가 비정질 $Ta_2O_5$ 박막 커패시터의 특성에 미치는 영향)

  • Jo, Seong-Dong;Baek, Gyeong-Uk
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.509-514
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    • 1999
  • Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

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A Study on Rotor Eddy Current Loss and Thermal Analysis of PM Synchronous Generator for Wind Turbine (풍력터빈 PM형 동기발전기의 와전류손실과 열 해석에 관한 연구)

  • Choi, Man Soo;Chang, Young Hag;Park, Tae Sik;Jeong, Moon Seon;Moon, Chae Joo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.11
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    • pp.1575-1581
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    • 2014
  • In this paper, eddy current loss, iron loss and heat transfer of PMSG with 2,000kW capacities were analyzed for wind turbine. The PMSG with 3 split magnet was analyzed using ansoft maxwell commercial program and, generator was tested by Back to Back converter with no load condition at laboratory. Rotor surface temperature was measured by Pt100 sensors for investigating heat transfer from rotor to atmosphere. The simulation results shows 27.4kW eddy current loss in no load condition and 50.2kW eddy current loss in rated load condition with 3 split magnet, and also shows 4.3kW iron loss in no load condition and 7.3kW iron loss rated load condition. The heat transfer coefficient of convection between rotor surface and atmosphere was investigated by $9.6W/m^2{\cdot}K$. Therefore the heat transfer from rotor to atmosphere was about 17kW(54%) and from rotor to air-gap was about 14.6kW(46%) in no load condition. It is identified that the cooling system for stator have to include the 46% of iron loss, and heat dissipation structure of rotor surface have to be suggested and designed for efficiency improvement of generator.

Structural and optical properties of $CuInS_2$ thin films fabricated by electron-beam evaporation (전자빔 증착으로 제조한 $CuInS_2$ 박막의 구조적 및 광학적 특성)

  • Park, Gye-Choon;Jeong, Woon-Jo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.193-196
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    • 2001
  • Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

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Development of Surface Cleaning Techniques for Analysis of Electronics Structure in CuInSe2, CuGaSe2 Solar Cell Absorber Layer (태양전지용CuInSe2와 CuGaSe2 흡수층의 전자구조해석을 위한 표면 청정기술 개발)

  • Kim, Kyung-Hwan;Choi, Hyung-Wook;Kong, Sok-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.125-129
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    • 2005
  • Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

The Altered Signaling on EFS-Induced Colon Contractility in Diabetic Rats

  • Thein, Wynn;Po, Wah Wah;Kim, Dong Min;Sohn, Uy Dong
    • Biomolecules & Therapeutics
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    • v.28 no.4
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    • pp.328-336
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    • 2020
  • Diabetes mellitus affects the colonic motility developing gastrointestinal symptoms, such as constipation. The aim of the study was to examine the role of intracellular signaling pathways contributing to colonic dysmotility in diabetes mellitus. To generate diabetes mellitus, the rats were injected by a single high dose of streptozotocin (65 mg/kg) intraperitoneally. The proximal colons from both normal and diabetic rats were contracted by applying an electrical field stimulation with pulse voltage of 40 V in amplitude and pulse duration of 1 ms at frequencies of 1, 2, 4, and 6 Hz. The muscle strips from both normal rats and rats with diabetes mellitus were pretreated with different antagonists and inhibitors. Rats with diabetes mellitus had lower motility than the control group. There were significant differences in the percentage of inhibition of contraction between normal rats and rats with diabetes mellitus after the incubation of tetrodotoxin (neuronal blocker), atropine (muscarinic receptor antagonist), prazosin (α1 adrenergic receptor antagonist), DPCPX (adenosine A1 receptor antagonist), verapamil (L-type Ca2+ channel blocker), U73122 (PLC inhibitor), ML-9 (MLCK inhibitor), udenafil (PDE5 inhibitor), and methylene blue (guanylate cyclase inhibitor). The protein expression of p-MLC and PDE5 were decreased in the diabetic group compared to the normal group. These results showed that the reduced colonic contractility resulted from the impaired neuronal conduction and decreased muscarinic receptor sensitivity, which resulted in decreased phosphorylation of MLC via MLCK, and cGMP activity through PDE5.

Numerical Analysis of Unsteady Heat Transfer for Location Selection of CPVC Piping (CPVC 배관 동파방지용 열선의 위치 선정을 위한 비정상 열전달 수치해석)

  • Choi, Myoung-Young;Choi, Hyoung-Gwon
    • Fire Science and Engineering
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    • v.29 no.6
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    • pp.33-39
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    • 2015
  • In this paper, a numerical experiment was conducted to find out the optimal location of electrical heat trace for anti-freeze of water inside the CPVC pipe for fire protection. The unsteady incompressible Navier-Stokes equations coupled with energy equation were solved. Since the conduction equation of pipe was coupled with the natural convection of water, the analysis of conjugate heat transfer was conducted. A commercial code (ANSYS-FLUENT) based on SIMPLE-type algorithm was used for investigating the unsteady flows and temperature distributions in water region. From the present numerical experiment, it has been found that the vector field of water inside the PVC pipe is opposite to the case of steel because of the huge difference of material properties of the two pipes. Furthermore, it was found that the lowest part of the pipe was an optimal position for electrical heat trace since the minimum water temperature of the case was higher than those of the other cases.

Comparison of the Effects of Straight and Twisted Heat Trace Installations Based on Three-dimensional Unsteady Heat Transfer (열선의 직선시공과 감기시공의 동파방지 효과 비교를 위한 3차원 비정상 수치해석)

  • Choi, Myoung-Young;Jeon, Byoung-Jin;Choi, Hyoung-Gwon
    • Fire Science and Engineering
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    • v.30 no.1
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    • pp.49-56
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    • 2016
  • This paper numerically examines, straight and twisted electrical heat trace installations for their anti-freezing effects on water inside a pipe. The unsteady incompressible Navier-Stokes equations coupled with an energy equation were solved to compare the two installation methods. The heat conduction of the pipe with a heat source interacts with the natural convection of the water, and the conjugate heat transfer was considered using a commercial code (ANSYS-FLUENT) based on a SIMPLE-type algorithm. Numerical experiments, were done to investigate the isotherms and the vector fields in the water region to extract the evolutions of the minimum and maximum temperatures of the water inside the pipe. There was no substantial difference in the anti-freezing effects between the straight and twisted. Therefore, the straight installation is recommended after considering the damage and short circuit behavior of the electrical heat trace.

The density-of-states effective mass and conductivity effective mass of electrons and holes in relaxed or strained Ge and ${Ge_{0.8}}{Sn_{0.2}}$ (완화된 또는 응력변형을 겪는 Ge과 ${Ge_{0.8}}{Sn_{0.2}}$에서 전자와 정공의 상태밀도 유효질량과 전도도 유효질량)

  • 박일수;전상국
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.643-650
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    • 2000
  • Density-of-states effective mass(m*$_{d}$) and conductivity mass(m*$_{c}$)for Ge and Ge$_{0.8}$/Sn$_{0.2}$ are obtained by using 8$\times$8 k.p and strain Hamiltonians. It is shown that m*$_{d}$ and m*$_{c}$ for electrons in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge$_{0.8}$/Sn$_{0.2}$/Ge(001) are much smaller than those for electrons in relaxed Ge mainly due to the increase of interaction caused by the strain between the conduction band and valence bands at the $\Gamma$ point. The lift of degeneracy in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) and Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) makes m*$_{d}$ and m*$_{c}$ for holes smaller than those in relaxed Ge and results in the decrease of the interband scattering as well as interband scattering. The decrease of the interband scattering is more obvious in Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) because of its large splitting energy between the heavy hole and light hole band. Therefore, Ge/Ge$_{0.8}$/Sn$_{0.2}$(001) is expected to be good candidate for the development of ultra high-speed CMOS device.CMOS device.eed CMOS device.CMOS device.

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The Partial Discharge Characteristics of the XLPE According to the Tilt of the Needle Electrode (침 전극 기울기에 따른 XLPE의 부분 방전 특성)

  • Shin, Jong-Yeol;Ahn, Byung-Chul;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.1
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    • pp.28-33
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    • 2015
  • The needle electrode is inserted into the cross-linked polyethylene(XLPE) which is the ultra high voltage cable for electric power. By changing the tilt of the needle electrode, we investigated how the void and the thickness of the insulating layer influence the partial discharge(PD) characteristics and the insulating breakdown. In order to investigate the PD characteristics, The XLPE cable was used to the specimens and the tungsten electrode was used with the needle electrode. And the inner semi-conductive layer material of XLPE cable was used with the negative electrode by bonding with the use of conduction tape. The size of the specimens was manufactured to be $16{\times}40{\times}30[mm^3]$. We confirmed the effect on changing the PD characteristics according to the changing voltage and the tilt of the electrode after applying the voltage on the electrode from 1[kV] to 40[kV] at room temperature. In the PD characteristics, it was confirmed that the PD current of air void specimens with tilt was unstable more than that of no void specimens with tilt. It was also confirmed that the breakdown voltage was decreased because the effect of air void is more active than the change of the needle electrode tilt in the specimen with air void inside the insulation.