• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2224-2236
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• 2014

The performance of an isolated high voltage full bridge converter is improved using a voltage doubler. In a conventional high voltage full bridge converter, the diode of the transformer secondary voltage undergoes a voltage spike due to the leakage inductance of the transformer and the resonance occurring with the parasitic capacitance of the diode. In addition, in the phase shift control, conduction loss largely increases from the freewheeling mode because of the circulating current. The efficiency of the converter is thus reduced. However, in the proposed converter, the high voltage dual converter consists of a voltage doubler because the circulating current of the converter is reduced to increase efficiency. On the other hand, in the proposed converter, an input current is distributed when using parallel input / serial output and the output voltage can be doubled. However, the voltages in the 2 serial DC links might be unbalanced due to line impedance, passive and active components impedance, and sensor error. Considering these problems, DC injection is performed due to the complementary operations of half bridge inverters as well as the disadvantage of the unbalance in the DC link. Therefore, the serial output of the converter needs to control the balance of the algorithm. In this paper, the performance of the conventional converter is improved and a balance control algorithm is proposed for the proposed converter. Also, the system of the 1.5[kW] PCS is verified through an experiment examining the operation and stability.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.3
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• pp.6-14
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• 2000

The high efficiency multi-resonant converter(MRC) is capable of operating at a high frequency because the losses are decreased due to the resonant tank circuit. Such a few MHz high frequency applications provide high power density[W/inch3] of the converter. However, the resonant voltage stress across the switch of the resonant tank circuit is 4∼5 times input voltage. This high voltage stress increases the conduction losses because of on-resistance of a MOSFET with higher rating. In this paper, the modeling analysis for the AT Forward MRC suggested to solve the these problems is discusses. The operational modes of the AT Forward MRC are divided to 8 equivalent modes according to the two switching sequences. Each mode analysis is covered using the equivalent circuits modeled over all of the paper. The operational principle of the resonant converter was verified through the experimental converter with 48[V] input voltage, 5[V]/50[W] output voltage/power and PSpice simulation. The measured maximum voltage, 5[V]/50[W] output voltage/power and PSpice simulation. The measure maximum voltage stress is 170[V] of 2.9 times the input voltage and the maximum efficiency is measured to 81.66%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.533-538
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.3
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• pp.120-125
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• 2002

The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. In the switching-mode power converter, the output voltage is generally controlled by varying the duty ratio of main switch. When a converter operates in steady state, duty ratio of the converter is kept constant. So the power of switching noise is concentrated in specific frequencies. Generally, to reduce the EMI and improve the immunity of converter system, the switching frequency of converter needs to be properly modulated during a rectified line period instead of being kept constant. Random Pulse Width Modulation (RPWM) is performed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300V/1kW with 5%~30% white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.215-224
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• 1987

The electrical conductuctivity measurements have been made on polycrystalline samples of various compositions in the $MgO-TiO_2$ system from 600 to $1100^{\circ}C$ under $Po_2$'s of $10^{-8}\;to\;10^{-1}$atm. Plots of log ${\sigma}$ vs. 1/T at constant $Po_2$ are found to be linear with the inflections, and the activation energies are 1.94eV for the intrinsic range and 0.48eV for the extrinsic range, respectively. The log ${\sigma}$ vs. log $Po_2$ curves are found to be linear at constant temperature, and the conductivity dependences of $Po_2$ are closely approximated by ${\sigma}\;{\alpha}\;Po_2^{-1/6}$ for the extrinsic and ${\sigma}\;{\alpha}\;Po_2^{-1/4}$ for the intrinsic range, respectively. The dominant defects in this system are believed to be oxygen vacancy for the extrinsic and $Ti^{3-}$ interstitial for the intrinsic range. The conduction mechanisms in both the extrinsic and the intrinsic ranges are proposed by the results of the electrical conductivity dependence on the oxygen partial pressure. Polaron model was suggested in the extrinsic region by the conductivity dependences of temperature and $Po_2$.

• Advances in nano research
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• v.2 no.1
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• pp.1-14
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• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• ETRI Journal
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• v.24 no.5
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• pp.349-359
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• 2002

With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p-type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling $HNO_3$:HCl (1:3). Metallization was by thermally evaporating 30 nm Ni/15 nm Au or 25 nm Pd/15 nm Au. After heat treatment in $O_2$ + $N_2$ at various temperatures, the contacts were subsequently cooled in liquid nitrogen. Cryogenic cooling following heat treatment at $600^{\circ}C$ decreased the specific contact resistance from $9.84{\times}10^{-4}$ ${\Omega}cm^2$ to $2.65{\times}10^{-4}$ ${\Omega}cm^2$ for the Ni/Au contacts, while this increased it from $1.80{\times}10^{-4}$ ${\Omega}cm^2$ to $3.34{\times}10^{-4}$ ${\Omega}cm^2$ for the Pd/Au contacts. The Ni/Au contacts showed slightly higher specific contact resistance than the Pd/Au contacts, although they were more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts, whereas the Pd/Au contacts exhibited a Pd:Au solid solution. The contacts quenched in liquid nitrogen following sintering were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.250-254
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• 2016

Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.