• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.6
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• pp.389-396
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• 2018

This study proposes a control method using a repetitive controller for a boost-type PFC rectifier with an APD circuit structure to improve the current distortion caused by DCM condition. Conventional proportional integral controllers have bandwidth limitations in DCM conditions. The performance improvement of the APD controller in the DCM region is verified through simulations and experiments on the compensation of harmonics by the repetitive controller.

• Journal of information and communication convergence engineering
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• v.16 no.4
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.4_1
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• pp.411-419
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• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.2
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• pp.134-141
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• 2022

This study presents a method for reducing current distortion that occurs when a dual-buck inverter generates reactive power. Dual-buck inverters, which are only capable of unity power factor operation, can generate reactive power capabilities by modifying a modulation technique. However, under non-unity power factor conditions, current distortion occurs at zero-crossing points of grid voltage and output current. This distortion is caused by parasitic capacitors, dead-time, and discontinuous conduction mode operation. This study proposes a modified modulation method to alleviate the current distortion at zero-crossing point of the grid voltage. A repetitive controller is applied to reduce this distortion of the output current. A 1 kVA prototype is built and tested. Simulation and experimental results demonstrate the effectiveness of the proposed method.

• Journal of Biomedical Engineering Research
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• v.4 no.1
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• pp.3-8
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• 1983

Characteristics of the lung inflation and deflation reflexes were measured at various temperatures on the cervical vagi in five anesthetized mongrel dogs. Nerve temperature was maintained at the body temperature, and 2-14˚C with 2˚C apart using a specially designed automated vagal cooling apparatus with an accuracy to within $\pm$ 0.1˚c at each temperature. The inflation reflex was blocked abruptly at 8-10˚C. The deflation reflex started weakened at 14˚C, thereafter showed a gradual blockade with the temperature decreased with a substantial variance among the animals.It was approximately 75% blocked at 2-5˚C. These differences in temperature characteristics made it hard to differentiate the deflation reflex from the inflation reflex. In one animal, however, the inflation reflex was completely blocked with the deflation reflex almost alive at 6-8˚C. This suggests that differential cold blockade of the vagal reflexes can be done only in selected subjects. Furthermore, the fact that these two reflexes were blocked at different temperatures may be due to the differences in the nerve fiber size and the changes in the conduction velocity with temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.295-299
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• 2015

In this paper to improve the ionic conduction properties, lanthanum silicate apatite $La_{9.33}(SiO_4)_6O_2$ ceramic, which substituted by V ions at Si-site, were fabricated by the mixed-oxide method. And we investigated the structural and electrical properties of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens with variation of dopants for the application of solid oxide fuel cells. The sintering temperature of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens decreased from $1,600^{\circ}C$ to $1,400^{\circ}C$. As results of X-ray diffraction patterns, all $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens showed the formation of a complete solid solution in a apatite polycrystallin structure. But the specimens doped with more than 1.5mol% showed the second phase, $La_2SiO_5$ and $SiO_2$. The specimen dopants with 1.0 mol% showed the maximum ion conductivity. Ion conducting and activation energy of the $La_{9.33}(Si_5V_1)O_26$ specimens were about $7.8{\times}10^{-4}S/cm$ 1.62 eV at $600^{\circ}C$, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Archives of Plastic Surgery
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• v.39 no.2
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• pp.138-142
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• 2012

Background : Electrical burns are one of the most devastating types of injuries, and can be characterized by the conduction of electric current through the deeper soft tissue such as vessels, nerves, muscles, and bones. For that reason, the extent of an electric burn is very frequently underestimated on initial impression. Methods : From July 1999 to June 2006, we performed 15 cases of toe tissue transfer for the reconstruction of finger defects caused by electrical burns. We performed preoperative range of motion exercise, early excision, and coverage of the digital defect with toe tissue transfer. Results : We obtained satisfactory results in both functional and aesthetic aspects in all 15 cases without specific complications. Static two-point discrimination results in the transferred toe cases ranged from 8 to 11 mm, with an average of 9.5 mm. The mean range of motion of the transferred toe was $20^{\circ}$ to $36^{\circ}$ in the distal interphalangeal joint, $16^{\circ}$ to $45^{\circ}$ in the proximal interphalangeal joint, and $15^{\circ}$ to $35^{\circ}$ in the metacarpophalangeal joint. All of the patients were relatively satisfied with the function and appearance of their new digits. Conclusions : The strategic management of electrical injury to the hands can be both challenging and complex. Because the optimal surgical method is free tissue transfer, maintenance of vascular integrity among various physiological changes works as a determining factor for the postoperative outcome following the reconstruction.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.