• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.71-76
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• 2022

Since brightness is proportional to the operating current, a method of connecting several LEDs in series and driving with a constant current source is widely used for driving circuits of LED lights. Because several LEDs are connected in series, if some LEDs open due to a fault, the current path is broken and all other LEDs connected in series are turned off. In this paper, we designed a circuit to solve this problem by connecting a Zener diode having a breakdown voltage of about 0.4V higher than the LED operating voltage in parallel with each LED to create a current bypass in case of LED failure. Through simulations and experiments, it was confirmed that the current of the Zener diode hardly flows when the LED is operating normally, and that the Zener diode stably operates as a current bypass when the LED fails.

• Composites Research
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• v.35 no.2
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• pp.69-74
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• 2022

In this study, the conductive paste used in a wide range such as wiring in the electronic packaging field, the automobile industry, and electronic products is manufactured under various process conditions due to the simplicity of the process, and then the thermal, mechanical, and electrical characteristics are analyzed and simulation studies are conducted to optimize the process. to establish the conditions of the conductive paste manufacturing process. First, a conductive paste was prepared by setting various types of binder resin, an essential component of the conductive paste, and characteristics such as thermal conductivity, tensile strength, and elongation were analyzed. Among the binder resins, the conductive paste applied with a flexible epoxy material had the best physical properties, and a simulation study was conducted based on the physical property data base of the conductive face. As a result of the simulation, the best physical properties were exhibited when the Ag flake volume fraction was 60%.

• Journal of IKEEE
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• v.26 no.2
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• pp.211-218
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• 2022

This paper presents a S-band phased array antenna system for receiving LEO satellite telemetry signals. The proposed antenna, which is performed to be beam-tiled along the elevation direction, consists of 16 sub-array assemblies, 16 active circuit modules, a perpendicular feed network and a control/power unit. In order to precisely track an LEO satellite, the developed antenna is placed with its elevation axis along the projected trajectory of the satellite on the earth. The center of antenna aperture is facing to the maximum elevation angle in the LEO trajectory. The beam-tilted angles for tracking LEO satellite are obtained by calculating accurately satellite points. Satellite tracking measurements are carried out in the range of ±30° with the respect to the maximum elevation angle. The S/N ratio of 16.5 dB and the Eb/No of 13.3 dB at the maximum elevation angle are obtained from the measurements. The measured result agrees well with the pre-analyzed system margin.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• Nuclear Engineering and Technology
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• v.54 no.7
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• pp.2444-2452
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• 2022

The field-programmable gate array (FPGA) is gaining popularity in industrial automation such as nuclear power plant instrumentation and control (I&C) systems due to the benefits of having non-existence of operating system, minimum software errors, and minimum common reason failures. Separate functions can be processed individually and in parallel on the same integrated circuit using FPGAs in comparison to the conventional microprocessor-based systems used in any plant operations. The use of FPGAs offers the potential to minimize complexity and the accompanying difficulty of securing regulatory approval, as well as provide superior protection against obsolescence. Wireless sensor networks (WSNs) are a new technology for acquiring and processing plant data wirelessly in which sensor nodes are configured for real-time signal processing, data acquisition, and monitoring. ZigBee (IEEE 802.15.4) is an open worldwide standard for minimum power, low-cost machine-to-machine (M2M), and internet of things (IoT) enabled wireless network communication. It is always a challenge to follow the specific topology when different Zigbee nodes are placed in a large network such as a plant. The research article focuses on the hardware chip design of different topological structures supported by ZigBee that can be used for monitoring and controlling the different operations of the plant and evaluates the performance in Vitex-5 FPGA hardware. The research work presents a strategy for configuring FPGA with ZigBee sensor nodes when communicating in a large area such as an industrial plant for real-time monitoring.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.5
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• pp.111-116
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• 2022

The causes of motor burnout include overload, phase loss, restraint, interlayer short circuit, winding ground fault, instantaneous overvoltage, and the rotor contacting the stator, leading to insulation breakdown, leading to breakdown or electrical accidents. Therefore, equipment failure causes not only loss due to cost required for equipment maintenance/repair, but also huge economic loss due to productivity decrease due to process stop because the process itself including the motor is stopped. The current level of technology for diagnosing motor failures uses vibration, heat, and power analysis methods, but there is a limit to analyzing the problems only after a considerable amount of time has passed according to the failure. Therefore, in this paper, a device and algorithm for measuring insulation resistance using DC AMP signal was applied to an industrial motor to solve this problem. And by following the insulation resistance state value, we propose a diagnosis of deterioration and failure of the motor that cannot be solved by the existing method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.258-263
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• 2021

ZnO varistor is a semiconductor device which can serve to protect the circuit from surge voltage because its non-linear I-V characteristics by controlling the microstructure of grain and grain boundaries. In order to obtain desired electrical properties, it is important to control microstructure evolution during the sintering process. In this research, we defined a dataset composed of process conditions of sintering and relative permittivity of sintered body, and collected experimental dataset with DOE. Meta-models can predict permittivity were developed by learning the collected experimental dataset on various machine learning algorithms. By utilizing the meta-model, we can derive optimized sintering conditions that could show the maximum permittivity from the numerical-based HMA (Hybrid Metaheuristic Algorithm) optimization algorithm. It is possible to search the optimal process conditions with minimum number of experiments if meta-model-based optimization is applied to ceramic processing.

• Journal of IKEEE
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• v.26 no.4
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• pp.659-670
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• 2022

An 830-Mb/s/pin transceiver for a controller supporting ×32 LPDDR2 memory is designed. The transmitter consists of eight unit circuits has an impedance in the range of 34Ω ∽ 240Ω, and its impedance is controlled by an impedance correction circuit. The transmitted DQS signal has a phase shifted by 90° compared to the DQ signals. In the receive operation, the read time calibration is performed by per-pin skew calibration and clock-domain crossing within a byte. The implemented transceiver for the LPDDR2 memory controller is designed by using a 55-nm process using a 1.2V supply voltage and has a maximum signal transmission rate of 830 Mb/s/pin. The area and power consumption of each lane are 0.664 mm² and 22.3 mW, respectively.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Journal of IKEEE
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• v.27 no.3
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• pp.327-332
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• 2023

CNTFET, which is receiving high attention as a next-generation semiconductor candidate due to its higher performance and various utilization than traditional silicon-based semiconductor devices, is having difficulty in commercialization because its unique process deviation such as CNT placement has not yet matured. To overcome this difficulty, numerous studies have been continuously conducted to take advantages of CNTFET and compensate its weakness by implementing circuits, which are less affected by process deviation due to repetitive circuit placement, into MOSFET-CNTFET based hybrid circuits. This paper compares how much the performance of the hybrid SRAM can be changed by semiconductor process variation existing in the traditional MOSFET SRAM or CNTFET SRAM. Simulation results show that, if the CNT density can be maintained between 7 and 9 per 32nm, hybrid SRAM is about 2.6 times and about 1.1 times more robust to process deviation than conventional MOSFET SRAM in read and write operations, respectively.