• Title/Summary/Keyword: Electrical breakdown characteristics

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A Study Comparison and Analysis of Electrical Characteristics of IGBTs with Variety Gate Structures (다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.681-684
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    • 2016
  • This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

A Study on electrical characteristics of New type bulk LDMOS (새로운 Bulk type LDMOSFET의 전기적 특성에 대한 연구)

  • Chung, Doo-Yun;Kim, Jong-Jun;Lee, Jong-Ho;Park, Chun-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.170-173
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    • 2003
  • In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

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Effect of Laminated Polypropylene Paper on the Breakdown Strength of Multi-layer Insulation for HTS Cable

  • Nguyen, Van-Dung;Baek, Seung-Myeong;Kwag, Dong-Soon;Kim, Sang-Huyn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05b
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    • pp.87-93
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    • 2004
  • Laminated Polypropylene Paper (LPP) and Kraft paper were used as ac power insulation for conventional cable as well as high temperature superconducting (HTS) cable because of its prominent insulating characteristics. However, researches on the use of LPP/Kraft paper in HTS cables are thinly scattered. In this paper, the effect of laminate polypropylene paper on the breakdown strength of LPP/Kraft multi-layer sample impregnated with liquid nitrogen (LN2)under ac and impulse applied voltage was studied. In addition, the breakdown strength characteristics of LPP and Kraft multi-layer sample were also investigated. It was found from the experimental data that the LPP has higher breakdown strength value than Kraft paper in ac and impulse. Especially in the ac case, the breakdown strength increases as the component ratio of LPP in the LPP/Kraftsample increases and slightly affected by the inserting position of LPP but in impulse case, the breakdown strength strongly depends on the number of LPP and the relative position of LPP.

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A Study on the Lightning Impulse Dielectric Characteristics of Air for the Development of Air-Insulated High Voltage Apparatuses (고전압 전력기기 개발을 위한 기중 절연파괴특성 분석에 관한 연구)

  • Nam, Seok-Ho;Kang, Hyoung-Ku
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.5
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    • pp.1005-1010
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    • 2011
  • The accidents caused by dielectric instability have been increasing in power grid. It is important to enhance the dielectric reliability of a high voltage apparatus to reduce the damage from electrical hazards. To develop an electrically reliable high voltage apparatus, the experimental study on the electrical breakdown field strength is indispensable, as well as theoretical approach. In this paper, the lightning impulse breakdown characteristics considering utilization factors are studied for the establishment of insulation design criteria of an high voltage apparatus. The utilization factors are represented as the ratio of mean electric field to maximum electric field. Dielectric experiments are performed by using several kinds of sphere-plane electrode systems made of stainless steel. As a result, it is found that dielectric characteristics are affected by not only maximum electric field intensity but also utilization factors of electrode systems. The results are expected to be applicable to designing the air-insulated high voltage apparatuses.

A study on insulation Characteristics of XLPE by various additives (다양한 첨가제에 따른 가교폴리에틸렌의 절연특성 분석)

  • Song, Sang-Min;Kim, Gyu-Sik;Son, Won-Keun;Ryu, Boo-Hyung;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.193-196
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    • 2001
  • XLPE is occasionally happened to deteriorate cable insulation characteristics. It is happened to do a breakdown state by the degradation of electrical characteristic and electrical breakdown strength. I prepared TR-XLPE (Tree-Retardant XLPE) as adding various additives to prevent its states. Various additives are treeing retardants, anti-oxidants. Treeing retardants three kinds of aromatic compounds as adding each additive. Anti-oxidants use quinone compound and cresol compound as adding each additive. In order to observe each electrical characteristics, I measured breakdown strength, relative dielectric constant$({\varepsilon}_r)$, dielectric loss tangent$(tan{\delta})$. TR-XLPE specimens as adding treeing retardants and anti-oxidants enhance breakdown strength, ${\varepsilon}_r$, $tan{\delta}$ than pure XLPE.

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AC Electrical Breakdown Characteristics of an Epoxy/Mica Composite

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.200-203
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    • 2012
  • Epoxy/mica composite was synthesized, in order to use it as an impregnation resin in a vacuum pressure impregnation (VPI) process, for manufacturing a high voltage rotary machine. The average particle size of the mica was 5~7 ${\mu}m$ and its content was 0, 20, 30 and 40 wt%. A plasticizer or a low molecular aliphatic epoxy was also used, to decrease the viscosity of the composite. The AC electrical breakdown strength was estimated in sphere-to-sphere electrodes, and the electrical breakdown data were estimated by Weibull statistical analysis. The electrical breakdown strength became higher with the addition of mica; and that of the system with 20 wt% mica was highest. The electrical breakdown strength of the system with an aliphatic epoxy was higher than that of the system with a, plasticizer.

TDDB Analysis and Electrical Characteristics of Thin Insulator Films (얇은 절연막의 TDDB 분석과 전기적 특성)

  • Park, Chanwon;Kim, Bokheon
    • Journal of Industrial Technology
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    • v.8
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    • pp.23-30
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    • 1988
  • In this paper, the characteristics of electrical breakdown and TDDR (Time Dependant Dielectric Breakdown) were studied to evaluate stability and reliability of thin insulator films such as oxide and nitride. As the oxide film thickness decreased, the electrical breakdown field was increased proportioning to its reverse square root, ${d^{-\frac{1}{2}}}$. As for the temperature dependance of breakdown field, its field was inclined to decrease as temperature increased. It also showed that oxide charge (Qss) was changed by stress field and stress time. Consequently, TDDB characteristics and breakdown mechanism proved the improvement of reliability and stability and provided the accurate analysis to predict a device life time.

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Improvement of Breakdown Characteristics Using Ribbed Spacer of GIS (GIS 립 스페이서에 의한 파괴전압 특성 개선)

  • 류성식;최영찬;곽희로
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.15 no.5
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    • pp.28-33
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    • 2001
  • This paper describes the effect of various conditions of the ribs on the breakdown characteristics when metal particle is attached to the spacer in GIS. More improved spacer shape in breakdown characteristics than conventional one is proposed by comparing the results acquired by varying location, length and thickness of the ribbed spacer. As a result, it was found that the electrical breakdown characteristics of the spacer with two ribs were generally better than that with only one rib or no ribs, and it was dependent on the rib length and rib thickness. Especially, it was also confirmed that the electrical breakdown characteristics were more improved by rounding the rib edge.

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Breakdown, V-t and Degradation Characteristics of Insulation in Liquid Nitrogen for HTS Transformer (고온초전도 변압기를 위한 액체질소 중 절연 파괴, V-t. 열화 특성)

  • Nguyen, Van-Dung;Joung, Jong-Man;Baek, Seung-Myeong;Lee, Chang-Hwa;Suck, Song-Hee;Kim, Sang-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.6
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    • pp.316-323
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    • 2004
  • HTS transformer is one of the most promising devices to supply enough electric energy for quick increase consumption. However, for practical design of the HTS transformer, it is necessary to establish the research on breakdown, V-t characteristics, degradation, and so on. In this paper, we discussed breakdown characteristics and V-t characteristics of polyimide/L$N_2$ and glass fiber reinforced plastic/$LN_2$ composite insulations. These composite insulations have been used as turn-to-turn and layer-to-layer insulations for HTS transformer respectively, Moreover, we investigated the degradation of these insulation samples after breakdown using microscope and SEM photograph.

Study on 3.3 kV Super Junction Field Stop IGBT According to Design and Process Parameters (설계 및 공정 파라미터에 따른 3.3 kV급 Super Junction FS-IGBT에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.4
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    • pp.210-213
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    • 2017
  • In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.